The invention relates to an article comprising a substrate having at least one main surface coated with a layer L of a material M obtained by vacuum deposition, by co-evaporation, of at least one metallic compound A chosen from alkaline-earth metal fluorides and of at least one organic compound B, the material M having a refractive index at the wavelength of 632.8 nm ranging from 1.38 to 1.47. According to the invention: the organic compound B comprises an organosilicon compound or a mixture of organosilicon compounds; and the deposition of the compound B, in gaseous form, is carried out in the presence of an ion bombardment.

A forming method of a thin layer with a pore is provided. The method includes forming a thin layer on a substrate, stacking a first mask and a second mask on the thin layer in this order, and forming a pore in the thin layer by dry etching. The first mask includes at least a self-assembling material. The second mask is more resistant to reactive etching or physical etching than the first mask.

A method of forming a layer (3) on a substrate (2) made of a fluoridic material includes: depositing a coating material (9) on the substrate to form the layer and generating a plasma (12) to assist the deposition of the coating material. The plasma is formed from a gas mixture (14) containing a first gas (G) and a second gas (H), wherein the second gas has an ionization energy less than an ionization energy of the first gas, the first gas is a noble gas and the second gas is a further noble gas. An associated optical element includes: a substrate (2) composed of a fluoridic material, in particular a metal fluoride, wherein the substrate has a coating (18) having a layer (3) formed by the above method. An associated optical system, in particular for the DUV wavelength range, includes at least one such optical element.

A component for a processing chamber includes a ceramic body having at least one surface with a first average surface roughness. The component further includes a conformal protective layer on at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness of less than 300 μm over the at least one surface and having a second average surface roughness that is less than the first average surface roughness.

An interference layer system includes a plurality of optically transparent layers. The interference layer system has no carrier substrate and the optically transparent layers are disposed extensively over one another. The optically transparent layers are selected from the group consisting of dielectrics, metals, and combinations thereof, with at least one first optically transparent layer having a refractive index n.sub.1 and at least one second optically transparent layer having a refractive index n.sub.2, and with the first refractive index n.sub.1 and the second refractive index n.sub.2 differing by at least 0.1. The disclosure further relates to the production and the use of the interference layer system.

A method for manufacturing a solid-state battery device. The method can include providing a substrate within a process region of an apparatus. A cathode source and an anode source can be subjected to one or more energy sources to transfer thermal energy into a portion of the source materials to evaporate into a vapor phase. An ionic species from an ion source can be introduced and a thickness of solid-state battery materials can be formed overlying the surface region by interacting the gaseous species derived from the plurality of electrons and the ionic species. During formation of the thickness of the solid-state battery materials, the surface region can be maintained in a vacuum environment from about 10.sup.−6 to 10.sup.−4 Torr. Active materials comprising cathode, electrolyte, and anode with non-reactive species can be deposited for the formation of modified modulus layers, such a void or voided porous like materials.

A component for a processing chamber includes a ceramic body having at least one surface with a first average surface roughness. The component further includes a conformal protective layer on at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness of less than 300 μm over the at least one surface and having a second average surface roughness that is less than the first average surface roughness.

A component for a semiconductor processing chamber includes a ceramic body having at least one surface with a first average surface roughness of approximately 8-16 micro-inches. The component further includes a conformal protective layer on at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness of less than 300 m over the at least one surface and having a second average surface roughness of below 10 micro-inches, wherein the second average surface roughness is less than the first average surface roughness.

A method of manufacturing a component for a reference electrode assembly according to various aspects of the present disclosure includes providing a separator having first and second opposing surfaces. The method further includes sputtering a first current collector layer to the first surface via magnetron or ion beam sputtering deposition. A porosity of the separator is substantially unchanged by the sputtering. In one aspect, the method further includes sputtering a second current collector layer to the second surface via magnetron or ion beam sputtering deposition. In one aspect, the first current collector layer includes nickel and defines a first thickness of greater than or equal to about 200 nm to less than or equal to about 300 nm and the second current collector layer includes gold and defines a second thickness of greater than or equal to about 25 nm to less than or equal to about 100 nm.

A forming method of a thin layer with a pore is provided. The method includes forming a thin layer on a substrate, stacking a first mask and a second mask on the thin layer in this order, and forming a pore in the thin layer by dry etching. The first mask includes at least a self-assembling material. The second mask is more resistant to reactive etching or physical etching than the first mask.