The present invention relates to a method of forming a coating layer having plasma resistance, the method comprising steps of: preparing a substrate by placing the substrate in a substrate fixing device inside a process chamber; evaporating a Y.sub.2O.sub.3 deposition material provided in a solid form in an electron beam source by irradiating an electron beam on the Y.sub.2O.sub.3 deposition material; generating radical particles having activation energy by injecting a process gas containing oxygen for forming radicals into a RF energy beam source; irradiating an RF energy beam including the radical particles generated in the RF energy beam source, toward the substrate; depositing a thin film in which the evaporated deposition material is deposited on the substrate by being assisted by the RF energy beam, and densifying the thin film in which the deposition material deposited on the substrate forms a densified film by ion bombardment of the RF energy beam.

The present invention relates to a method of forming a coating layer of which a composition can be controlled, the method comprising steps of: preparing a substrate inside a chamber; evaporating a deposition material to generate YF.sub.3 or YOF particles in a gas phase by irradiating an electron beam on a YF.sub.3 deposition material provided in a solid form in an electron beam source; generating radical particles having activation energy by injecting a process gas containing oxygen into a RF energy beam source; irradiating an RF energy beam including oxygen radical particles toward the substrate; controlling a composition of a thin film by generating YOF deposition particles having a modified atomic ratio by adjusting an amount of fluorine substitution by oxygen as the YF.sub.3 or YOF particles and the oxygen radical particles react, and depositing the YOF deposition particles on the substrate with the RF energy beam.

An apparatus for laser deposition with a reactive gas includes a source, a target, and a substrate. The source emits a plasma jet of the reactive gas. The target generates a plasma plume of a deposition material when a laser beam ablates the target. The substrate collects a film resulting from a chemical reaction between the deposition material from the plasma plume and the reactive gas from the plasma jet. Correspondingly, a method for laser deposition with a reactive gas includes steps of emitting a plasma jet of the reactive gas, ablating a target with a laser beam, and collecting a film on a substrate. The plasma jet emits from an orifice of a source. Ablating the target generates a plasma plume of a deposition material. The film results from a chemical reaction between the deposition material from the plasma plume and the reactive gas from the plasma jet.

The present invention relates to a method of forming a coating layer of which a composition can be controlled, the method comprising steps of: preparing a substrate inside a chamber; evaporating a deposition material to generate YF.sub.3 or YOF particles in a gas phase by irradiating an electron beam on a YF.sub.3 deposition material provided in a solid form in an electron beam source; generating radical particles having activation energy by injecting a process gas containing oxygen into a RF energy beam source; irradiating an RF energy beam including oxygen radical particles toward the substrate; controlling a composition of a thin film by generating YOF deposition particles having a modified atomic ratio by adjusting an amount of fluorine substitution by oxygen as the YF.sub.3 or YOF particles and the oxygen radical particles react, and depositing the YOF deposition particles on the substrate with the RF energy beam.

Microfluidic devises and process for making the devices include coating a substrate with an active oxygen layer and covalently bonding a polymeric microfluidic pattern to the substrate and devices made by the process.

A method of manufacturing a plurality of through-holes in a layer of first material, for example for the manufacturing of a probe comprising a tip containing a channel. To manufacture the through-holes in a batch process, a layer of first material is deposited on a wafer comprising a plurality of pits a second layer is provided on the layer of first material, and the second layer is provided with a plurality of holes at central locations of the pits; using the second layer as a shadow mask when depositing a third layer at an angle, covering a part of the first material with said third material at the central locations, and etching the exposed parts of the first layer using the third layer as a protective layer.

A method of manufacturing a component for a reference electrode assembly according to various aspects of the present disclosure includes providing a separator having first and second opposing surfaces. The method further includes sputtering a first current collector layer to the first surface via magnetron or ion beam sputtering deposition. A porosity of the separator is substantially unchanged by the sputtering. In one aspect, the method further includes sputtering a second current collector layer to the second surface via magnetron or ion beam sputtering deposition. In one aspect, the first current collector layer includes nickel and defines a first thickness of greater than or equal to about 200 nm to less than or equal to about 300 nm and the second current collector layer includes gold and defines a second thickness of greater than or equal to about 25 nm to less than or equal to about 100 nm.

Embodiments described herein provide for optical devices with methods of forming optical device substrates having at least one area of increased refractive index or scratch resistance. One method includes disposing an etch material on a discrete area of an optical device substrate or an optical device layer, disposing a diffusion material in the discrete area, and removing excess diffusion material to form an optical material in the optical device substrate or the optical device layer having a refractive index greater than or equal to 2.0 or a hardness greater than or equal to 5.5 Mohs.

PbO-based photoconductive X-ray imaging devices are disclosed in which the PbO photoconductive layer exhibits an amorphous crystal structure. According to selected embodiments, the amorphous PbO photoconductive layer may be formed by providing a substrate inside an evacuated evaporation chamber and evaporating lead oxide to deposit a photoconductive lead oxide layer onto the substrate, while subjecting the photoconductive layer to ion bombardment with oxygen ions having an ion energy between 25 and 100 eV. X-ray direct detection imaging devices formed from such amorphous PbO photoconductive layers are shown to exhibit image lag that is suitable for fluoroscopic imaging.

An orthopaedic implant can replace a joint in a patient. The orthopaedic implant includes a first component having a first component surface and a second component having a second component surface. The first component surface and the second component surface mate at an interface. The first component surface includes a metal substrate, a nanotextured surface, a ceramic coating, and a transition zone. The nanotextured surface is disposed directly upon the metal substrate and has surface features in a size of 10.sup.−9 meters. The ceramic coating conforms to the nanotextured surface and includes a plurality of bio-active sites configured to attract and retain calcium and phosphorous cations. The transition zone is disposed between the metal substrate and the ceramic coating. The transition zone includes a concentration gradient transitioning from the metal substrate to the ceramic coating and there is no distinct interface between the metal substrate and the ceramic coating.