A film forming apparatus includes: a processing container; a substrate holder that holds the substrate in the processing container; and a target assembly disposed in an upper side of the substrate holder. The target assembly includes: a target made of metal, including a main body and a flange provided around the main body, and emitting sputter particles from the main body; a target holder including a target electrode configured to supply power to the target, and holding the target; a target clamp that clamps the flange of the target to the target holder; and an anti-deposition shield provided around the main body of the target to cover the flange, the target clamp, and the target holder, and having a labyrinth structure in which an inner tip end thereof is disposed to enter a recess between the main body of the target and the target clamp.

A vacuum processing apparatus includes: a stage on which a substrate is placed; and a shutter configured to be able to move between a shielding position at which the stage is covered and a retracted position that is retracted from the shielding position, wherein the shutter arranged at the shielding position forms a processing space between the shutter and the stage, and includes: a gas supplier configured to supply a gas into the processing space; and a gas exhauster provided closer to a center side of the processing space than the gas supplier and configured to exhaust the gas from the processing space.

A preparation method for a high-refractive index hydrogenated silicon film, a high-refractive index hydrogenated silicon film, a light filtering lamination and a light filtering piece. The method includes: (a) by magnetic controlled Si target sputtering, Si deposits on a base body, forming a silicon film, which (b) forms an oxygenic hydrogenated silicon film in environment of active hydrogen and active oxygen, the amount of active oxygen accounts for 4%-99% of the total amount of active hydrogen and active oxygen, or, a nitric hydrogenated silicon film in environment of active hydrogen and active nitrogen, the amount of active nitrogen accounts for 5%-20% of the total amount of active hydrogen and active nitrogen. Sputtering and reactions are separately conducted, Si first deposits on the base body by magnetic controlled Si target sputtering, and then plasmas of active hydrogen and active oxygen/nitrogen react with silicon for oxygenic or nitric SiH.

A plasma processing apparatus includes a cylindrical electrode which has a lower end provided with an opening, an upper end that is a closed end, in which a process gas is introduced, and which obtains a plasma process gas upon application of the voltage, and a chamber that is a vacuum container provided with an opening. The cylindrical electrode, which has the upper end attached to the opening of the chamber via an insulation material, is extended in the chamber. The plasma processing apparatus also includes a rotation table carrying a workpiece to be processed by the process gas to a space below the opening of the cylindrical electrode, a shield covering the cylindrical electrode extended inside the chamber via a gap, and a spacer installed in the gap, and formed of an insulation material.

Disclosed are embodiments for an engineered feature formed as a part of or on a chamber component. In one embodiment, a chamber component for a processing chamber includes a component part body having unitary monolithic construction. The component part body has an outer surface. An engineered complex surface is formed on the outer surface. The engineered complex surface has a first lattice framework formed from a plurality of first interconnected laths and a plurality of first openings are bounded by three or more laths of the plurality of laths.

A substrate processing apparatus including a chamber accommodating a substrate; a substrate support in the chamber, the substrate support supporting the substrate; a gas injector to inject an oxidizing gas for oxidizing a metal layer to be disposed on the substrate; a cooler under the substrate to cool the substrate; a target mount disposed on the substrate, the target mount including a target for performing a sputtering process; and a blocker between the target and the gas injector, the blocker shielding the target from the oxidizing gas injected from the gas injector.

A film forming apparatus according to the present invention comprises: a processing chamber; a substrate holder for holding a substrate within the processing chamber; a target electrode, disposed above the substrate holder, for holding a metal target and supplying electrical power from a power source to the target; an oxidizing gas introduction mechanism for supplying an oxidizing gas to the substrate; and a gas supply unit for supplying an inert gas to the space where the target is disposed. Constituent metal is discharged from the target in the form of sputter particles, whereby a metal film is deposited on the substrate, and the metal film is oxidized by the oxidizing gas introduced by the oxidizing gas introduction mechanism, thereby forming a metal oxide film. When the oxidizing gas is introduced, the gas supply unit supplies the inert gas to the space where the target is disposed so that the pressure therein is positive with respect to the pressure in a processing space.

A 3D identification filter (101) is provided, which has a passband partially overlapping with a wavelength range of 800 nm to 1800 nm and a blocking band containing a range of 380 nm to 750 nm, and comprises a substrate (102) and filter film layers (103, 104) coated on both surfaces of the substrate, wherein the filter film layer (103) on one of the surfaces is composed of high refractive index layers, medium refractive index layers, and low refractive index layers that are stacked, and the filter film layer (104) on the other surface is composed of at least two layers of materials that are stacked. The 3D identification filter (101) maintains a high bocking level and a narrow transition band while achieving a small wavelength shift at a large light incident angle.

A coated medical instrument can include a first layer bonded to a metal substrate surface of a medical instrument, a second layer bonded to the first layer, and a third layer disposed on the second layer, The first layer comprises chromium (Cr), hafnium (Hf), titanium (Ti), and/or niobium (Nb). The second layer comprises a nitride, oxide, carbide, carbonitride, or boride of chromium (Cr), hafnium (Hf), niobium (Nb), tungsten (W), titanium (Ti), aluminum (Al), zirconium (Zr), and/or silicon (Si). The third layer comprises a nitride, oxide, carbide, boride, oxynitride, oxycarbide, or oxycarbonitride of chromium (Cr), hafnium (Hf), niobium (Nb), tungsten (W), titanium (Ti), aluminum (Al), zirconium (Zr), and/or silicon (Si). Methods for making coated medical instruments are also disclosed herein.

Disclosed are embodiments for an engineered feature formed as a part of or on a chamber component. In one embodiment, a chamber component for a processing chamber includes a component part body having unitary monolithic construction. The component part body has an outer surface. An engineered complex surface is formed on the outer surface. The engineered complex surface has a first lattice framework formed from a plurality of first interconnected laths and a plurality of first openings are bounded by three or more laths of the plurality of laths.