Disclosed are an anti-icing material with stealth function, a preparation method and use thereof. The anti-icing material with stealth function according to the disclosure includes an electrically insulating and thermally insulating layer, a patterned heating layer, an electrically insulating and thermally conducting layer, and a hydrophobic layer, that are disposed sequentially through stacking, wherein the patterned heating layer has a patterned hollowed-out structure.

A method for fabricating an external element or a timepiece dial from non-conductive material, by performing or repeating a basic cycle of making a base from a non-conductive, or ceramic, or glass. or sapphire substrate; dry coating the base with a first sacrificial protective metal layer; etching a decoration with an ultrashort pulse laser to a depth at least equal to the local thickness of the first layer; dry coating the decoration and the remaining part of the first layer with a second metal and/or coloured decorative treatment layer; chemically removing each first layer; and before or after chemical removal of each first layer, mechanically levelling on the upper level of the base the compound thus formed.

A metallic lustrous member with radio wave transmissibility is provided, which is capable of being easily produced, while ensuring a structure in which not only chromium or indium but also any of some other metals such as aluminum is formed as a metal layer on a continuous surface of any of various materials, and also an article using the member is provided. A production method for a metallic lustrous member with radio wave transmissibility, which is capable of easily forming, as a metal layer, not only chromium or indium but also any of some other metals such as aluminum, on a continuous surface of any of various materials. The metallic lustrous member comprises a substrate having radio wave transmissibility, and an aluminum layer formed directly on a continuous surface of the substrate. The aluminum layer has a discontinuous region including a plurality of separated segments which are mutually discontinuous.

Systems, methods, and devices of the various embodiments provide for microfabrication of devices, such as semiconductors, thermoelectric devices, etc. Various embodiments may include a method for fabricating a device, such as a semiconductor (e.g., a silicon (Si)-based complementary metal-oxide-semiconductor (CMOS), etc.), thermoelectric device, etc., using a mask. In some embodiments, the mask may be configured to allow molecules in a deposition plume to pass through one or more holes in the mask. In some embodiments, molecules in a deposition plume may pass around the mask. Various embodiments may provide thermoelectric devices having metallic junctions. Various embodiments may provide thermoelectric devices having metallic junctions rather than junctions formed from semiconductors.

The fine metal mask provided in the present disclosure includes at least one mask pattern portion, and at least one protective portion that is disposed on and connected with at least one side edge of the at least one mask pattern portion, wherein a thickness of the at least one protective portion is less than a thickness of the at least one mask pattern portion.

The technology disclosed relates to high utilization of donor material in a writing process using Laser-Induced Forward Transfer. Specifically, the technology relates to reusing, or recycling, unused donor material by recoating target substrates with donor material after a writing process is performed with the target substrate. Further, the technology relates to target substrates including a pattern of discrete separated dots to be individually ejected from the target substrate using LIFT.

Methods of modulating flow during vapor jet deposition of organic materials are provided. A method may include ejecting a vapor entrained in a delivery gas from a nozzle onto a substrate upon which the vapor condenses. A confinement gas may be provided that has a flow direction opposing a flow direction of the delivery gas ejected from the nozzle. A vacuum source may be provided that is adjacent to a delivery gas aperture of the nozzle. The method may include adjusting, by an actuator, a fly height separation between a deposition nozzle aperture of the nozzle and a deposition target.

Methods of modulating flow during vapor jet deposition of organic materials are provided. A method may include ejecting a vapor entrained in a delivery gas from a nozzle onto a substrate upon which the vapor condenses. A confinement gas may be provided that has a flow direction opposing a flow direction of the delivery gas ejected from the nozzle. A vacuum source may be provided that is adjacent to a delivery gas aperture of the nozzle. The method may include adjusting, by an actuator, a fly height separation between a deposition nozzle aperture of the nozzle and a deposition target.

A coated cylinder liner 20 comprises a wear resistant layer 22, such as a DLC coating, and a metallic adhesive layer 24, such as chromium or titanium, deposited on an inner surface 26 thereof. The layers 22, 24 each have a thickness t.sub.w, t.sub.n varying by not more than 5% along at least 70% of the length of the inner surface 26. The metallic adhesive layer 24 is deposited by sputtering a consumable metallic electrode 28 onto the inner surface 26. The sputtering can be magnetron sputtering. The consumable metallic electrode 28 can include a hollow opening 40 with orifices 50 for providing a carrier gas into the deposition chamber 52. In addition, the inner surface 26 of the cylinder liner 20 can provide the deposition chamber 52 by sealing a first opening 36 and second opening 38 of the cylinder liner 20.

The invention relates in particular to a method for creating patterns in a layer (410) to be etched, starting from a stack comprising at least the layer (410) to be etched and a masking, layer (420) on top of the layer (410) to be etched, the masking layer (420) having at least one pattern (421), the method comprising at least; a) a step of modifying at least one zone (411) of the layer (410) to be etched via ion implantation (430) vertically in line with said at least one pattern (421); b) at least one sequence of steps comprising: b1) a step of enlarging (440) the at least one pattern (421) in a plane in which the layer (410) to be etched mainly extends; b2) a step of modifying at least one zone (411″, 411″) of the layer (410) to be etched via ion implantation (430) vertically in line with the at least one enlarged pattern (421), the implantation being carried out over a depth less than the implantation depth of the preceding, modification step;) c) a step of removing (461, 462) the modified zones (411, 411′, 41″), the removal comprising a step of etching the modified zones (411, 411′, 411″) selectively with respect to the non-modified zones (412) of the layer (410) to be etched.