C23C14/06

METHOD OF MANUFACTURING HIGH CAPACITANCE ANODE AND CATHODE FILMS OF CAPACITOR
20230010446 · 2023-01-12 ·

A method of manufacturing high capacitance anode and cathode films of capacitors is revealed. Perform sputter deposition on a cathode aluminum foil in a vacuum chamber to form a cathode metal layer which is a titanium layer on a surface of the cathode aluminum foil. Then titanium continuously reacts with nitrogen to form cathode columnar crystal deposition on a surface of the cathode metal layer and get a cathode film. Perform sputter deposition on an anode aluminum foil in a vacuum chamber to form an anode metal layer which is a titanium layer on a surface of the anode aluminum foil. Then titanium continuously reacts with oxygen and nitrogen to form anode columnar crystal deposition on a surface of the anode metal layer and get an anode film. Next use the cathode and anode films with high capacitance to form cathode and anode electrodes of the capacitor.

CYLINDER LINERS WITH ADHESIVE METALLIC LAYERS AND METHODS OF FORMING THE CYLINDER LINERS
20180003125 · 2018-01-04 ·

A coated cylinder liner 20 comprises a wear resistant layer 22, such as a DLC coating, and a metallic adhesive layer 24, such as chromium or titanium, deposited on an inner surface 26 thereof. The layers 22, 24 each have a thickness t.sub.w, t.sub.n varying by not more than 5% along at least 70% of the length of the inner surface 26. The metallic adhesive layer 24 is deposited by sputtering a consumable metallic electrode 28 onto the inner surface 26. The sputtering can be magnetron sputtering. The consumable metallic electrode 28 can include a hollow opening 40 with orifices 50 for providing a carrier gas into the deposition chamber 52. In addition, the inner surface 26 of the cylinder liner 20 can provide the deposition chamber 52 by sealing a first opening 36 and second opening 38 of the cylinder liner 20.

MACROPARTICLE FILTER DEVICE AND METHOD FOR USE IN CATHODIC ARC DEPOSITION
20180002805 · 2018-01-04 ·

A macroparticle filter device for cathodic arc evaporation, to be placed between at least one arc evaporation source and at least one substrate exhibiting at least a surface to be coated with material evaporated from a cathode of the arc evaporation source in a vacuum coating chamber. The macroparticle filter device includes one or more filter components that can prevent macroparticles emitted by the cathode during cathodic arc evaporation to arrive the substrate surface to be coated. The at least one component is provided as one or more flexible sheets that block the lineal way of the macroparticles from the cathode to the substrate surface to be coated. Further a method for utilizing the macroparticle filter device is presented.

GROWTH METHOD OF GRAPHENE

The present invention provides a growth method of grapheme, which at least comprises the following steps: S1: providing an insulating substrate, placing the insulating substrate in a growth chamber; S2: heating the insulating substrate to a preset temperature, and introducing a gas containing catalytic element into the growth chamber; S3: feeding carbon source into the growth chamber and growing a graphene thin film on the insulating substrate. The present invention adopts a catalytic manner of introducing catalytic element, and rapid grows a high quality graphene on the insulating substrate, which avoids the transition process of the graphene, enables to improve the production yield of the graphene, reduces the growth cost of the graphene, and thus the mass production can be facilitated. The graphene grown by the present invention may be applied in the field of novel graphene electronic devices, graphene transparent conducting film, transparent conducting coating and the like.

COATED TOOL
20180010233 · 2018-01-11 · ·

A coated tool includes a substrate and a coating layer disposed on a surface of the substrate. The coating layer includes a first stack structure (3) and a second stack structure (4). The first stack structure has two or more kinds of layers with different compositions periodically stacked with an average layer thickness of 60-500 nm. The second stack structure has two or more kinds of layers with different compositions periodically stacked with an average layer thickness of 2 nm to less than 60 nm. The layers in each stack structure include at least one selected from the group consisting of metal elements Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Al, Si, Sr, Y, Sn and Bi; and compounds including at least one of these metal elements and at least one non-metal element selected from carbon, nitrogen, oxygen and boron.

LIGHT WAVE SEPARATION LATTICES AND METHODS OF FORMING LIGHT WAVE SEPARATION LATTICES
20180011331 · 2018-01-11 ·

Light wave separation lattices and methods of formation are provided herein. In some embodiments, a light wave separation lattice includes a first layer having the formula RO.sub.xN.sub.y, wherein the first layer has a first refractive index; and a second layer, different from the first layer, disposed atop the first layer, and having the formula R′O.sub.xN.sub.y, wherein the second layer has a second refractive index different from the first refractive index, and wherein R and R′ are each one of a metal or a dielectric material. In some embodiments, a method of forming a light wave separation lattice includes depositing a first layer having a predetermined desired refractive index atop a substrate by a physical vapor deposition process; and depositing a second layer, different from the first layer, atop the first layer, wherein the second layer has a predetermined second refractive index different from the first refractive index.

Sputtering method

A sputtering method includes one or more sputtering processes. Each sputtering process includes in a first pre-sputtering phase, sputtering a target material on a baffle plate configured to shield a substrate; in a second pre-sputtering phase, sputtering a target material compound on the baffle plate; and in a main sputtering phase, sputtering the target material compound on the substrate. The first pre-sputtering phase is used to adjust a sputtering voltage for the main sputtering phase.

DUPLEX SURFACE TREATMENT FOR TITANIUM ALLOYS
20180010229 · 2018-01-11 ·

A surface treatment for a metal substrate includes a nitride layer and a diamond-like carbon coating on said nitride layer. The metal substrate can be a titanium-containing substrate. The nitride layer and diamond-like carbon coating serve to improve the tribological properties of the metal substrate.

HARD COATING FILM

A hard film formed on/above a substrate has a composition represented by the following formula (1): Cr.sub.1−aMg.sub.a(B.sub.xC.sub.yN.sub.1−x−y) (1). In the formula (1), a is the atomic ratio of Mg, x is the atomic ratio of B, and y is the atomic ratio of C; and a, x, and y satisfy the following relationships: 0.05≦a≦0.30, 0≦x≦0.20, and 0≦y≦0.30.

HARD COATING FILM

A hard film formed on/above a substrate has a composition represented by the following formula (1): Cr.sub.1−aMg.sub.a(B.sub.xC.sub.yN.sub.1−x−y) (1). In the formula (1), a is the atomic ratio of Mg, x is the atomic ratio of B, and y is the atomic ratio of C; and a, x, and y satisfy the following relationships: 0.05≦a≦0.30, 0≦x≦0.20, and 0≦y≦0.30.