An ultraviolet light-resistant article that includes: a substrate having a glass or glass-ceramic composition and first and second primary surfaces; an ultraviolet light-absorbing element having a an absorptivity greater than 50% at wavelengths from about 100 nm to about 380 nm and a thickness between about 10 nm and about 100 nm; and a dielectric stack formed with a plasma-enhanced process. Further, the light-absorbing element is between the substrate and the dielectric stack. Alternatively, the light-absorbing element can include one or more ultraviolet light-resistant layers disposed within the dielectric stack over the first primary surface.

An ultraviolet light-resistant article that includes: a substrate having a glass or glass-ceramic composition and first and second primary surfaces; an ultraviolet light-absorbing element having a an absorptivity greater than 50% at wavelengths from about 100 nm to about 380 nm and a thickness between about 10 nm and about 100 nm; and a dielectric stack formed with a plasma-enhanced process. Further, the light-absorbing element is between the substrate and the dielectric stack. Alternatively, the light-absorbing element can include one or more ultraviolet light-resistant layers disposed within the dielectric stack over the first primary surface.

Provided is a negative ion irradiation device in which an object is irradiated with a negative ion. The device includes a chamber that allows the negative ion to be generated therein, a gas supply unit that supplies a gas which is a raw material for the negative ion, a plasma generating portion that generates plasma, a voltage applying unit that applies a voltage to the object, a control unit that performs control of the gas supply unit, the plasma generating portion, and the voltage applying unit. The control unit controls the gas supply unit to supply the gas into the chamber, controls the plasma generating portion to generate the plasma in the chamber and to generate the negative ion by stopping the generation of the plasma, and controls the voltage applying unit to start voltage application during plasma generation and to continue voltage application after plasma generation stop.

A steel sheet is provided with a coating having at least one layer of zinc and a top layer of paint applied by cataphoresis. The zinc layer is deposited by a jet vapor deposition process in a deposition chamber maintained at a pressure between 6.Math.10.sup.−2 mbar and 2.Math.10.sup.−1 mbar. A fabrication method and an installation are also provided.

A steel sheet is provided with a coating having at least one layer of zinc and a top layer of paint applied by cataphoresis. The zinc layer is deposited by a jet vapor deposition process in a deposition chamber maintained at a pressure between 6.Math.10.sup.−2 mbar and 2.Math.10.sup.−1 mbar. A fabrication method and an installation are also provided.

A system and method for performing is laser induced forward transfer (LIFT) of 2D materials is disclosed. The method includes generating a receiver substrate, generating a donor substrate, wherein the donor substrate comprises a back surface and a front surface, applying a coating to the front surface, wherein the coating includes donor material, aligning the front surface of the donor substrate to be parallel to and facing the receiver substrate, wherein the donor material is disposed adjacent to the target layer, and irradiating the coating through the back surface of the donor substrate with one or more laser pulses produced by a laser to transfer a portion of the donor material to the target layer. The donor material may include Bi.sub.2S.sub.3-xS.sub.x, MoS.sub.2, hexagonal boron nitride (h-BN) or graphene. The method may be used to create touch sensors and other electronic components.

A method is for manufacturing materials for electrochemical energy storage devices. A deposition method based on laser ablation is utilised in the manufacturing of at least one material layer including lithium. The process is controlled using measurement information that is obtained from the spectrum of the electromagnetic radiation generated by laser ablation. A roll-to-roll method can be used in the deposition, in which the substrate (15, 32, 44, 64, 75, 85) to be coated is directed from one roll (31a) to the second roll (31 b), and the deposition takes place in the area between the rolls (31a-b). In addition, turning and/or moving mirrors (21) can be used to direct laser beam (12, 41, 71a-d, 81a-d) as a beam line array (23) to the surface of the target (13, 42a-b, 72a-d, 82a-d, 82A-D).

A method is for manufacturing materials for electrochemical energy storage devices. A deposition method based on laser ablation is utilised in the manufacturing of at least one material layer including lithium. The process is controlled using measurement information that is obtained from the spectrum of the electromagnetic radiation generated by laser ablation. A roll-to-roll method can be used in the deposition, in which the substrate (15, 32, 44, 64, 75, 85) to be coated is directed from one roll (31a) to the second roll (31 b), and the deposition takes place in the area between the rolls (31a-b). In addition, turning and/or moving mirrors (21) can be used to direct laser beam (12, 41, 71a-d, 81a-d) as a beam line array (23) to the surface of the target (13, 42a-b, 72a-d, 82a-d, 82A-D).

Apparatus and associated methods relate to forming an epitaxial layer of aluminum on an aluminum-nitride compound. The aluminum is epitaxially grown on the crystalline aluminum-nitride compound by maintaining temperature of a crystalline aluminum-nitride compound below a cluster-favoring temperature threshold within a vacuum chamber. Then, the crystalline aluminum-nitride compound is exposed to atoms of elemental aluminum for a predetermined time duration. The aluminum is epitaxially grown in this fashion for a predetermined time duration so as to produce a layer of epitaxial aluminum of a predetermined thickness. Such epitaxially-grown mono-crystalline aluminum has a lower resistivity than poly-crystalline aluminum.

Apparatus and associated methods relate to forming an epitaxial layer of aluminum on an aluminum-nitride compound. The aluminum is epitaxially grown on the crystalline aluminum-nitride compound by maintaining temperature of a crystalline aluminum-nitride compound below a cluster-favoring temperature threshold within a vacuum chamber. Then, the crystalline aluminum-nitride compound is exposed to atoms of elemental aluminum for a predetermined time duration. The aluminum is epitaxially grown in this fashion for a predetermined time duration so as to produce a layer of epitaxial aluminum of a predetermined thickness. Such epitaxially-grown mono-crystalline aluminum has a lower resistivity than poly-crystalline aluminum.