The technology disclosed relates to high utilization of donor material in a writing process using Laser-Induced Forward Transfer. Specifically, the technology relates to reusing, or recycling, unused donor material by recoating target substrates with donor material after a writing process is performed with the target substrate. Further, the technology relates to target substrates including a pattern of discrete separated dots to be individually ejected from the target substrate using LIFT.

The technology disclosed relates to high utilization of donor material in a writing process using Laser-Induced Forward Transfer. Specifically, the technology relates to reusing, or recycling, unused donor material by recoating target substrates with donor material after a writing process is performed with the target substrate. Further, the technology relates to target substrates including a pattern of discrete separated dots to be individually ejected from the target substrate using LIFT.

The present invention provides a growth method of grapheme, which at least comprises the following steps: S1: providing an insulating substrate, placing the insulating substrate in a growth chamber; S2: heating the insulating substrate to a preset temperature, and introducing a gas containing catalytic element into the growth chamber; S3: feeding carbon source into the growth chamber and growing a graphene thin film on the insulating substrate. The present invention adopts a catalytic manner of introducing catalytic element, and rapid grows a high quality graphene on the insulating substrate, which avoids the transition process of the graphene, enables to improve the production yield of the graphene, reduces the growth cost of the graphene, and thus the mass production can be facilitated. The graphene grown by the present invention may be applied in the field of novel graphene electronic devices, graphene transparent conducting film, transparent conducting coating and the like.

The present invention provides a growth method of grapheme, which at least comprises the following steps: S1: providing an insulating substrate, placing the insulating substrate in a growth chamber; S2: heating the insulating substrate to a preset temperature, and introducing a gas containing catalytic element into the growth chamber; S3: feeding carbon source into the growth chamber and growing a graphene thin film on the insulating substrate. The present invention adopts a catalytic manner of introducing catalytic element, and rapid grows a high quality graphene on the insulating substrate, which avoids the transition process of the graphene, enables to improve the production yield of the graphene, reduces the growth cost of the graphene, and thus the mass production can be facilitated. The graphene grown by the present invention may be applied in the field of novel graphene electronic devices, graphene transparent conducting film, transparent conducting coating and the like.

A mixed semiconductor-superconductor platform is fabricated in phases. In a masking phase, a dielectric mask is formed on a substrate, such that the dielectric mask leaves one or more regions of the substrate exposed. In a selective area growth phase, a semiconductor material is selectively grown on the substrate in the one or more exposed regions. In a superconductor growth phase, a layer of superconducting material is formed, at least part of which is in direct contact with the selectively grown semiconductor material. The mixed semiconductor-superconductor platform comprises the selectively grown semiconductor material and the superconducting material in direct contact with the selectively grown semiconductor material.

A mixed semiconductor-superconductor platform is fabricated in phases. In a masking phase, a dielectric mask is formed on a substrate, such that the dielectric mask leaves one or more regions of the substrate exposed. In a selective area growth phase, a semiconductor material is selectively grown on the substrate in the one or more exposed regions. In a superconductor growth phase, a layer of superconducting material is formed, at least part of which is in direct contact with the selectively grown semiconductor material. The mixed semiconductor-superconductor platform comprises the selectively grown semiconductor material and the superconducting material in direct contact with the selectively grown semiconductor material.

A thin film deposition apparatus comprising: a laser pulse generator to generate a laser pulse; optical elements to optionally P-polarize and optionally rotate the laser pulse polarization with a polarization angle φ based on the cavity chamber and deposition material; focusing optics to focus the laser pulse; a source of deposition material having refractive index n.sub.2; said deposition material mounted within an evacuated chamber having a refractive index n.sub.1; a rotation and / or translation device to alter and / or direct said laser pulse onto said source of deposition material at an incidence angle θ to produce a plasma to be deposited on a substrate; wherein the polarization angle φ and incidence angle θ are defined by the area under the graphical representation of the ellipse of equation

[00001]$\frac{{\left(\theta -{\theta }_0\right)}^2}{a^2}+\frac{{\left(\phi -{\phi }_0\right)}^2}{b^2}=1$

where θ.sub.0=0.8× arctan (n.sub.2/n.sub.1), φ.sub.0=0, a=0.4× arctan (n.sub.2/n.sub.1) and b=0.5× arctan (n.sub.2/n.sub.1).

A thin film deposition apparatus comprising: a laser pulse generator to generate a laser pulse; optical elements to optionally P-polarize and optionally rotate the laser pulse polarization with a polarization angle φ based on the cavity chamber and deposition material; focusing optics to focus the laser pulse; a source of deposition material having refractive index n.sub.2; said deposition material mounted within an evacuated chamber having a refractive index n.sub.1; a rotation and / or translation device to alter and / or direct said laser pulse onto said source of deposition material at an incidence angle θ to produce a plasma to be deposited on a substrate; wherein the polarization angle φ and incidence angle θ are defined by the area under the graphical representation of the ellipse of equation

[00001]$\frac{{\left(\theta -{\theta }_0\right)}^2}{a^2}+\frac{{\left(\phi -{\phi }_0\right)}^2}{b^2}=1$

where θ.sub.0=0.8× arctan (n.sub.2/n.sub.1), φ.sub.0=0, a=0.4× arctan (n.sub.2/n.sub.1) and b=0.5× arctan (n.sub.2/n.sub.1).

Systems and methods for printing a printed circuit board (PCB) from substrate to full integration utilize a laser-assisted deposition (LAD) system to print a flowable material on top of a substrate by laser jetting to create a PCB structure to be used as an electronic device. One such system for PCB printing includes a jet printing unit, an imaging unit, curing units, and a drilling unit to print metals and other materials (e.g., epoxies, solder masks, etc.) directly on a PCB substrate such as a glass-reinforced epoxy laminate material (e.g., FR4). The jet printing unit can also be used for sintering and/or ablating materials. Printed materials are cured by heat or by infrared (IR) or ultraviolet (UV) radiation. PCBs produced according to the present systems and methods may be single-sided or double-sided.

Systems and methods for printing a printed circuit board (PCB) from substrate to full integration utilize a laser-assisted deposition (LAD) system to print a flowable material on top of a substrate by laser jetting to create a PCB structure to be used as an electronic device. One such system for PCB printing includes a jet printing unit, an imaging unit, curing units, and a drilling unit to print metals and other materials (e.g., epoxies, solder masks, etc.) directly on a PCB substrate such as a glass-reinforced epoxy laminate material (e.g., FR4). The jet printing unit can also be used for sintering and/or ablating materials. Printed materials are cured by heat or by infrared (IR) or ultraviolet (UV) radiation. PCBs produced according to the present systems and methods may be single-sided or double-sided.