The present disclosure relates to electrochromic elements (10) and devices (110) comprising an electrochromic material layer (114), an insulating layer (116), and a bulk heterojunction layer (118), having one or more optical properties that may be changed upon application of an electric potential. Upon provision of an electric potential above a threshold, electrons and holes may be injected into the electrochromic layer (114) and bulk heterojunction layer (118), and blocked by the insulating layer (116), resulting in an accumulation of the electrons and holes in their respective electrochromic material resulting in a change to the one or more optical properties of the electrochromic materials (114; 118). An opposite electric potential may be provided to reverse the change in the one or more optical properties.

The present disclosure relates to electrochromic elements (10) and devices (110) comprising an electrochromic material layer (114), an insulating layer (116), and a bulk heterojunction layer (118), having one or more optical properties that may be changed upon application of an electric potential. Upon provision of an electric potential above a threshold, electrons and holes may be injected into the electrochromic layer (114) and bulk heterojunction layer (118), and blocked by the insulating layer (116), resulting in an accumulation of the electrons and holes in their respective electrochromic material resulting in a change to the one or more optical properties of the electrochromic materials (114; 118). An opposite electric potential may be provided to reverse the change in the one or more optical properties.

Provided is a method of producing a target material with reduced particle generation during sputtering, which is a method of producing a sputtering target material whose material is an alloy M, including a sintering step of sintering a mixed powder obtained by mixing a first powder and a second powder. A material of the first powder is an alloy M1 in which the proportion of a B content is from 40 at. % to 60 at. %. A material of the second powder is an alloy M2 in which the proportion of a B content is from 20 at. % to 35 at. %. The proportion of a B content in the mixed powder is from 33 at. % to 50 at. %. A metallographic structure including a (CoFe).sub.2B phase and a (CoFe)B phase is formed in the sintering step. A boundary length per unit area Y (1/μm), which is obtained by measuring a boundary length between the (CoFe).sub.2B phase and the (CoFe)B phase using a scanning electron microscope, and a proportion X (at. %) of a B content of the alloy M satisfy the expression

Y<−0.0015×(X−42.5).sup.2+0.15.

A hydrogen-free carbon film polymer lubricating material and a preparation method and use thereof are disclosed. In the method, a graphite target is used as the target material, and a magnetron sputtering deposition is performed on a surface of the polymer substrate, thereby physically depositing and forming a hydrogen-free carbon film on the surface of the polymer substrate, thereby obtaining a hydrogen-free carbon film polymer lubricating material.

Thermoregulated multilayer material characterized in that it comprises at least one substrate and one thermoregulated layer, said thermoregulated multilayer material having: for λ radiation of between 0.25 and 2 μm, an absorption coefficient αm≥0.8; and, for incident λ radiation of between 7.5 and 10 μm, a reflection coefficient ρm: ρm≥0.85, when the temperature T of said multilayer material 1 is ≤100° C.; ρm between 0.3 and 0.85, when the temperature T of said multilayer material is between 0 and 400° C.

A cathode unit for performing a sputtering film formation includes: a target that emits sputtering particles; a target cooler that includes a cooling plate to which the target is bonded; and a power supply that supplies a power to the target. The target has a high-temperature region that has a higher temperature than other regions of the target during a film formation. The cooling plate includes a coolant flow space through which a coolant flows, and a first wall and a second wall that define the coolant flow space in a thickness direction. In the coolant flow space, a flow path of the coolant is formed by a first partition plate and a second partition plate. The first partition plate does not exist at a portion of the coolant flow space that corresponds to the high-temperature region.

Embodiments of process kits are provided herein. In some embodiments, a process kit, includes: a deposition ring configured to be disposed on a substrate support, the deposition ring comprising: an annular band having an upper surface and a lower surface, the lower surface including a step between a radially inner portion and a radially outer portion, the step extending downward from the radially inner portion to the radially outer portion; an inner lip extending upwards from the upper surface of the annular band and adjacent an inner surface of the annular band, and wherein an outer surface of the inner lip extends radially outward and downward from an upper surface of the inner lip to the upper surface of the annular band; a channel disposed radially outward of the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.

Embodiments of deposition rings for use in a process chamber are provided herein. In some embodiments, a deposition ring includes: an annular body; an inner wall extending upward from an inner portion of the annular body; and an outer wall extending upward form an outer portion of the annular body to define a large deposition cavity between the inner wall and the outer wall, wherein a width of the large deposition cavity is about 0.35 inches to about 0.60 inches, wherein the outer wall includes an outer ledge and an inner ledge raised with respect to the outer ledge.

Embodiments of deposition rings for use in a process chamber are provided herein. In some embodiments, a deposition ring includes: an annular body; an inner wall extending upward from an inner portion of the annular body; and an outer wall extending upward form an outer portion of the annular body to define a large deposition cavity between the inner wall and the outer wall, wherein a width of the large deposition cavity is about 0.35 inches to about 0.60 inches, wherein the outer wall includes an outer ledge and an inner ledge raised with respect to the outer ledge.

Embodiments of the present disclosure provide a substrate processing system. In one embodiment, the system includes a chamber, a target disposed within the chamber, a magnetron disposed proximate the target, a pedestal disposed within the chamber, and a first gas injector disposed at a sidewall of the chamber, the first gas injector having a movable gas outlet.