Embodiments disclosed herein generally relate to a system and, more specifically, a substrate processing system. The substrate processing system includes one or more cooling systems. The cooling systems are configured to lower and/or control the temperature of a body of the substrate processing system. The cooling systems include features to cool the body disposed in the substrate processing system using gas and/or liquid cooling systems. The cooling systems disclosed herein can be used when the body is disposed at any height.

Provided is a negative ion irradiation device in which an object is irradiated with a negative ion. The device includes a chamber that allows the negative ion to be generated therein, a gas supply unit that supplies a gas which is a raw material for the negative ion, a plasma generating portion that generates plasma, a voltage applying unit that applies a voltage to the object, a control unit that performs control of the gas supply unit, the plasma generating portion, and the voltage applying unit. The control unit controls the gas supply unit to supply the gas into the chamber, controls the plasma generating portion to generate the plasma in the chamber and to generate the negative ion by stopping the generation of the plasma, and controls the voltage applying unit to start voltage application during plasma generation and to continue voltage application after plasma generation stop.

One or more embodiments described herein generally relate to methods and systems for forming films on substrates in semiconductor processes. In embodiments described herein, process chamber is provided that includes a lid plate having a plurality of cooling channels formed therein, a pedestal, the pedestal having a plurality of cooling channels formed therein, and a showerhead, wherein the showerhead comprises a plurality of segments and each segment is at least partially surrounded by a shield.

Aspects of the disclosure provided herein generally provide a substrate processing system that includes: a processing chamber including: a top plate having an array of process station openings disposed therethrough surrounding a central axis, a bottom plate having a first central opening, and a plurality of side walls between the top plate and the bottom plate; a plurality of heaters disposed in the top plate and the bottom plate and configured in a plurality of regions; and a system controller configured to independently control the plurality of heaters in each region.

An apparatus for manufacturing a display apparatus includes a deposition source, a nozzle head, a substrate fixer, and a deposition preventer. The deposition source is outside the chamber and vaporizes or sublimates a deposition material. The nozzle head is in the chamber, is connected to the at least one deposition source, and simultaneously sprays the deposition material onto an entire surface of a display substrate. The substrate fixer is connected to the chamber and moves linearly, with the display apparatus is mounted on the substrate fixer. The deposition preventer is in the chamber surrounding an edge portion of the nozzle head and an edge portion of the substrate fixer. The deposition preventer is heated during a deposition process.

A sputtering apparatus including a chamber, a gas supply configured to supply the chamber with a first gas and a second inert gas, the first inert gas and the second inert gas having a first evaporation point and second evaporation point, respectively, a plurality of sputter guns in an upper portion of the chamber, a chuck in a lower portion of the chamber and facing the sputter guns, the chuck configured to accommodate a substrate thereon, and a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature less than the first evaporation point and greater than the second evaporation point, and a method of fabricating a magnetic memory device may be provided.

An ion beam deposition apparatus includes a substrate assembly to secure a substrate, a target assembly slanted with respect to the substrate assembly, the target assembly including a target with deposition materials, an ion gun to inject ion beams onto the target, such that ions of the deposition materials are discharged toward the substrate assembly to form a thin layer on the substrate, and a substrate heater to heat the substrate to a deposition temperature higher than a room temperature.

A substrate processing apparatus includes a processing chamber where a substrate support on which a substrate is placed and a target holder configured to hold a target are disposed, a freezing device disposed with a gap with respect to a bottom surface of the substrate support and having a chiller and a cold heat medium laminated on the chiller, and a rotating device configured to rotate the substrate support. The substrate processing apparatus further includes a first elevating device configured to raise and lower the substrate support, a coolant channel formed in the chiller to supply a coolant to the gap, and a cold heat transfer material disposed in the gap and being in contact with the substrate support and the cold heat medium so as to transfer heat therebetween.

To provide a sliding member comprising a coating film exhibiting constant and stable chipping resistance and wear resistance and excellent in peeling resistance (adhesion), and the coating film thereof. The above-described problem is solved by a sliding member (10) comprising a coating film (1) on a sliding surface (16) on a base material (11). The coating film (1) has, when a cross section thereof is observed by a bright-field TEM image, a total thickness within a range of 1 μm to 50 μm, in repeating units including black hard carbon layers (B), relatively shown in black, and white hard carbon layers (W), relatively shown in white, and laminated in a thickness direction (Y). In the black hard carbon layer (B) and the white hard carbon layer (W) adjacent to each other, the white hard carbon layer (W) has higher hardness and a larger [sp.sup.2/(sp.sup.2+sp.sup.3)] ratio than the black hard carbon layer (B).

Methods and apparatus for processing a substrate are provided herein. For example, a cooling apparatus for use with a substrate support of a processing chamber comprises a heat exchanger, a manifold assembly comprising a first input configured to connect to an output of the heat exchanger, a second input configured to connect to a first coolant supply configured to supply a first coolant, a first output configured to connect to the substrate support of the processing chamber, and a second output configured to connect to an input of the heat exchanger, a gas input configured to connect to a second coolant supply that is configured to supply a second coolant that is different from the first coolant to the substrate support, a first three-way valve connected between the first output of the manifold assembly and the substrate support and connected between the gas input and the substrate support, and a controller configured to control supplying one of the first coolant or the second coolant during operation.