A hydrogen-free carbon film polymer lubricating material and a preparation method and use thereof are disclosed. In the method, a graphite target is used as the target material, and a magnetron sputtering deposition is performed on a surface of the polymer substrate, thereby physically depositing and forming a hydrogen-free carbon film on the surface of the polymer substrate, thereby obtaining a hydrogen-free carbon film polymer lubricating material.

In a method for evaporating a non-gaseous starting material, the starting material is introduced into an evaporation chamber; an evaporation element heats the starting material to create a vapor; a conveying gas flow transports the vapor through a conveying channel and past a sensor, which measures the concentration or partial pressure of the vapor in the gas flow flowing through the conveying channel; and the mass flow of the vapor through the conveying channel is controlled by varying the conveying gas flow with respect to a setpoint value. To keep the vapor flow largely constant over time, a compensating gas flow is fed into the conveying channel at a mixing point disposed between the evaporator and the sensor. A second mass flow controller controls the mass flow of the compensating gas flow such that, when the conveying gas flow varies, the gas flow flowing past the sensor remains constant.

A deposition system is provided capable of controlling an amount of a target material deposited on a substrate and/or direction of the target material that is deposited on the substrate. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, a target enclosing the substrate process chamber, and a collimator having a plurality of hollow structures disposed between the target and the substrate, wherein a length of at least one of the plurality of hollow structures is adjustable.

Disclosed are an apparatus for and a method of manufacturing a semiconductor device. The apparatus includes a chamber, an evaporator that evaporates an organic source to provide a source gas on a substrate in the chamber, a vacuum pump that pumps the source gas and air from the chamber, an exhaust line between the vacuum pump and the chamber, and an analyzer connected to the exhaust line. The analyzer detects a derived molecule produced from the organic source and determines a replacement time of the evaporator.

A method is for manufacturing materials for electrochemical energy storage devices. A deposition method based on laser ablation is utilised in the manufacturing of at least one material layer including lithium. The process is controlled using measurement information that is obtained from the spectrum of the electromagnetic radiation generated by laser ablation. A roll-to-roll method can be used in the deposition, in which the substrate (15, 32, 44, 64, 75, 85) to be coated is directed from one roll (31a) to the second roll (31 b), and the deposition takes place in the area between the rolls (31a-b). In addition, turning and/or moving mirrors (21) can be used to direct laser beam (12, 41, 71a-d, 81a-d) as a beam line array (23) to the surface of the target (13, 42a-b, 72a-d, 82a-d, 82A-D).

Provided is a vacuum coating device, comprising a crucible (13), an induction heater (15) arranged on the outer side of the crucible (13); a flow distribution box connected to the top of the crucible (13) through a steam pipeline (16); a pressure regulating valve (18) and a diverter valve (19) sequentially arranged in a direction in which the steam pipeline (16) is in communication with the flow distribution box; a horizontal pressure stabilizing plate (20) arranged in the flow distribution box, a plurality of sub-nozzles (21) connected to the top of the flow distribution box; wherein a plurality of air flow distribution chambers are arranged in the diverter valve (19); a ratio of a total area of the air flow distribution chambers (S.sub.distribution) to an area of the steam pipeline (16) in the radial direction (S.sub.pipeline) is greater than or equal to 0.1, i.e.: S.sub.diversion/S.sub.pipeline≥0.1. According to the device, a uniform spray flow can be formed, a uniform coating (23) is formed on the surface of a steel plate (100) when high temperature steam is in contact with a low temperature steel plate, the spray flow formed by the sub-nozzles (21) arranged at the rear portion continuously covers the deposited metal layer that has been formed, so as to achieve efficient coating of strip steel under vacuum conditions.

A sputtering system includes a vacuum chamber, a power source having a pole coupled to a backing plate for holding a sputtering target within the vacuum chamber, a pedestal for holding a substrate within the vacuum chamber, and a time of flight camera positioned to scan a surface of a target held to the backing plate. The time of flight camera may be used to obtain information relating to the topography of the target while the target is at sub-atmospheric pressure. The target information may be used to manage operation of the sputtering system. Managing operation of the sputtering system may include setting an adjustable parameter of a deposition process or deciding when to replace a sputtering target. Machine learning may be used to apply the time of flight camera data in managing the sputtering system operation.

Embodiments are directed to a method of optimizing thickness of a target material film deposited on a semiconductor substrate in a semiconductor processing chamber, wherein the semiconductor processing chamber includes a magnetic assembly positioned on the semiconductor processing chamber, the magnetic assembly including a plurality of magnetic columns within the magnetic assembly. The method includes operating the semiconductor processing chamber to deposit a film of target material on a semiconductor substrate positioned within the semiconductor processing chamber, measuring an uniformity of the deposited film, adjusting a position of one or more magnetic columns in the magnetic assembly, and operating the semiconductor processing chamber to deposit the film of the target material after adjusting position of the one or more magnetic columns.

An improved cathodic arc source and method of DLC film deposition with a carbon containing directional-jet plasma flow produced inside of cylindrical graphite cavity with depth of the cavity approximately equal to the cathode diameter. The generated carbon plasma expands through the orifice into ambient vacuum resulting in plasma flow strong self-constriction. The method represents a repetitive process that includes two steps: the described above plasma generation/deposition step that alternates with a recovery step. This step provides periodical removal of excessive amount of carbon accumulated on the cavity wall by motion of the cathode rod inside of the cavity in direction of the orifice. The cathode rod protrudes above the orifice, and moves back to the initial cathode tip position. The said steps periodically can be reproduced until the film with target thickness is deposited. Technical advantages include the film hardness, density, and transparency improvement, high reproducibility, long duration operation, and particulate reduction.

The present invention discloses a PVD coating process for producing a multifunctional coating structure comprising the steps of producing a HEA ceramic matrix on a substrate and the targeted introduction of a controlled precipitate structure into the HEA ceramic matrix to generate a desired specific property of the coating structure.