The PVD apparatus includes a chamber, a plurality of stages, a first target holder, a power supply mechanism, and a shield. The plurality of stages are provided inside the chamber, and each of the plurality of stages is configured to place at least one substrate on an upper surface thereof. The first target holder is configured to hold at least one target provided for one stage, the target being exposed to a space inside the chamber. The power supply mechanism supplies power to the target via the first target holder. The shield is provided inside the chamber and a part of the shield is disposed between a first stage and a second stage in the plurality of stages, and between a first processing space on the first stage and a second processing space on the second stage.

A method and apparatus for thermal evaporation are provided. The thermal evaporator includes a flat crucible design, which provides an increased surface area for evaporation of the material to be deposited relative to conventional designs. The increased surface area for evaporation means that the more vapor of the evaporated material can be produced, which increases pressure inside the evaporator body leading to increased flow of the evaporated material out of the nozzles. The flat crucible can be attached to an evaporator body of the thermal evaporator. The flat crucible can be integrated within the evaporator body. The evaporator body can include a plurality of longitudinal grooves, which increase the surface area of the evaporator body. The thermal evaporator can include a plurality of baffles which divide the thermal evaporator into separate compartments.

The technology disclosed relates to high utilization of donor material in a writing process using Laser-Induced Forward Transfer. Specifically, the technology relates to reusing, or recycling, unused donor material by recoating target substrates with donor material after a writing process is performed with the target substrate. Further, the technology relates to target substrates including a pattern of discrete separated dots to be individually ejected from the target substrate using LIFT.

The technology disclosed relates to high utilization of donor material in a writing process using Laser-Induced Forward Transfer. Specifically, the technology relates to reusing, or recycling, unused donor material by recoating target substrates with donor material after a writing process is performed with the target substrate. Further, the technology relates to target substrates including a pattern of discrete separated dots to be individually ejected from the target substrate using LIFT.

An evaporation system for providing a gas for a reactive deposition process, reactive deposition apparatuses, and methods of reactive deposition are provided. The evaporation system in includes a multi-zone diffuser assembly for single or double-sided continuous roll-to-roll or batch coating of web substrates. The diffuser assembly is sized to accommodate at least a portion of a coating drum. The diffuser assembly includes a plurality of interchangeable solid plates and diffuser plates for delivering an evaporated material toward a web substrate. The diffuser plates are fluidly coupled with an evaporation source.

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

A film forming apparatus for forming a thin film on a flexible substrate. The film forming apparatus forms a thin film on a flexible substrate under vacuum. The film forming apparatus includes a first zone into which a first gas is introduced and a second zone into which a second gas is introduced in a vacuum chamber. Zone separators have openings through which the flexible substrate passes. The film forming apparatus includes a mechanism that reciprocates the flexible substrate between the zones. Further, the film forming apparatus includes a mechanism that supplies a raw material gas containing metal or silicon to the first zone, and a mechanism that performs sputtering of a material containing metal or silicon as a target material in the second zone.

Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.

A coating device includes a vacuum chamber, a crucible, at least one spray head for preparing the coating material, and an injector tube, wherein the injector tube is designed to conduct the prepared coating material to the crucible and is connected to the crucible, wherein the at least one spray head can be moved between an operating position, in which the spray head supplies the injector tube with the prepared coating material, and a removal position, and wherein at least one removal chamberis provided which is designed to be accessible from outside the vacuum chamber and which can be sealed off from the vacuum chamber and in which the at least one spray headin its removal position is separated from the vacuum chamber in a gas-tight manner.

According to various embodiments, the temperature control roller may comprise: a cylindrical roller shell, which has a multiplicity of gas outlet openings; a temperature control device, which is configured to supply and/or extract thermal energy to or from the cylindrical roller shell; multiple gas lines made to extend along the axis of rotation; a gas distributing structure, which couples the multiple gas lines and the multiplicity of gas outlet openings to one another in a gas-conducting manner, the gas distributing structure having a lower structure density than the multiplicity of gas outlet openings.