Provided are methods and systems for providing silicon-containing films. The composition of the silicon-containing film can be controlled by the choice of the combination of precursors and the ratio of flow rates between the precursors. The silicon-containing films can be deposited on a substrate by flowing two different organo-silicon precursors to mix together in a reaction chamber. The organo-silicon precursors react with one or more radicals in a substantially low energy state to form the silicon-containing film. The one or more radicals can be formed in a remote plasma source.

Disclosed is a coated ceramic fiber including a silicon carbide coating layer adjacent to the ceramic fiber and a silicon dioxide coating layer adjacent to the silicon carbide coating layer, wherein the silicon dioxide coating layer forms micro cracks after a crystal structure transformation. The coated ceramic fiber may be included in a composite material having a ceramic matrix.

Systems for and methods of manufacturing a ceramic matrix composite include introducing a gaseous precursor into an inlet portion of a reaction furnace having a chamber comprising the inlet portion and an outlet portion that is downstream of the inlet portion, and delivering a mitigation agent, such as water vapor or ammonia, into an exhaust conduit in fluid communication with and downstream of the outlet portion of the reaction chamber so as to control chemical reactions occurring with the exhaust chamber. Introducing the gaseous precursor densifies a porous preform, and introducing the mitigation agent shifts the reaction equilibrium to disfavor the formation of harmful and/or pyrophoric byproduct deposits within the exhaust conduit.

A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

An aerospace mirror having a reaction bonded (RB) silicon carbide (SiC) mirror substrate, and a SiC cladding on the RB SiC mirror substrate forming an optical surface on a front side of the aerospace mirror. A method for manufacturing an aerospace mirror comprising obtaining a green mirror preform comprising porous carbon, silicon carbide (SiC), or both, the green mirror preform defining a front side of the aerospace mirror and a back side of the aerospace mirror opposite the front side; removing material from the green mirror preform to form support ribs on the back side; infiltrating the green mirror preform with silicon to create a reaction bonded (RB) SiC mirror substrate from the green mirror preform; forming a mounting interface surface on the back side of the aerospace mirror from the RB SiC mirror substrate, and forming a reflector surface of the RB SiC mirror substrate on the front side of the aerospace mirror. Additionally, the method can comprise cladding the reflector surface of the RB SiC mirror substrate with SiC to form an optical surface of the aerospace mirror.

Methods for depositing silicon oxycarbide (SiOC) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor that does not comprise nitrogen and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOC films having improved acid-based wet etch resistance.

Described are vapor deposition methods for depositing molybdenum materials onto a substrate by the use of bis(alkyl-arene) molybdenum, also referred to herein as (alkyl-arene).sub.2Mo, for example bis(ethyl-benzene) molybdenum ((EtBz).sub.2Mo), as a precursor for such deposition, as well as structures that contain the deposited material.

Described are vapor deposition methods for depositing molybdenum materials onto a substrate by the use of bis(alkyl-arene) molybdenum, also referred to herein as (alkyl-arene).sub.2Mo, for example bis(ethyl-benzene) molybdenum ((EtBz).sub.2Mo), as a precursor for such deposition, as well as structures that contain the deposited material.

Process for manufacturing a nuclear component comprising i) a support containing a substrate based on a metal (1), the substrate (1) being coated or not coated with an interposed layer (3) positioned between the substrate (1) and at least one protective layer (2) and ii) the protective layer (2) composed of a protective material comprising chromium; the process comprising a step a) of vaporizing a mother solution followed by a step b) of depositing the protective layer (2) onto the support via a process of chemical vapor deposition of an organometallic compound by direct liquid injection (DLI-MOCVD).

Nuclear component comprising i) a support containing a substrate based on a metal, the substrate (1) being coated or not coated with an interposed layer (3) positioned between the substrate (1) and at least one protective layer (2) and ii) the protective layer (2) composed of a protective material comprising chromium. The composite nuclear component manufactured by the process of the invention has improved resistance to oxidation, hydriding and/or migration of undesired material.

The invention also relates to the use of the nuclear component for combating oxidation and/or hydriding.