An oil separator is provided. The oil separator includes a housing providing an oil separation space therein. An inlet introducing oil/gas mixture into the oil separation space is provided within an upper portion of the housing. An outlet discharging oil is provided within the lower portion of the housing. A gas discharge conduit is connected to the oil separation space. A portion of a surface exposed in the oil separation space is provided with a nanorod layer.

An oil separator is provided. The oil separator includes a housing providing an oil separation space therein. An inlet introducing oil/gas mixture into the oil separation space is provided within an upper portion of the housing. An outlet discharging oil is provided within the lower portion of the housing. A gas discharge conduit is connected to the oil separation space. A portion of a surface exposed in the oil separation space is provided with a nanorod layer.

Implementations described herein generally relate to materials and coatings, and more specifically to materials and coatings for aluminum and aluminum-containing chamber components. In one implementation, a process is provided. The process comprises exposing an aluminum-containing component to a moisture thermal treatment process and exposing the aluminum-containing component to a thermal treatment process. The moisture thermal treatment process comprises exposing the aluminum-containing component to an environment having a moisture content from about 30% to about 100% at a first temperature from about 30 to about 100 degrees Celsius. The thermal treatment process comprises heating the aluminum-containing component to a second temperature from about 200 degrees Celsius to about 550 degrees Celsius to form an alumina layer on the at least one surface of the aluminum-containing component.

Implementations described herein generally relate to materials and coatings, and more specifically to materials and coatings for aluminum and aluminum-containing chamber components. In one implementation, a process is provided. The process comprises exposing an aluminum-containing component to a moisture thermal treatment process and exposing the aluminum-containing component to a thermal treatment process. The moisture thermal treatment process comprises exposing the aluminum-containing component to an environment having a moisture content from about 30% to about 100% at a first temperature from about 30 to about 100 degrees Celsius. The thermal treatment process comprises heating the aluminum-containing component to a second temperature from about 200 degrees Celsius to about 550 degrees Celsius to form an alumina layer on the at least one surface of the aluminum-containing component.

The present disclosure provides a precursor solution of an indium gallium zinc oxide film and a method of preparing an indium gallium zinc oxide thin film transistor. The precursor solution is provided with an indium salt, a gallium salt, a zinc salt, a stabilizing agent, and a solvent. The stabilizing agent is ethanolamine. Use of ethanolamine helps to promote an oxidation process of the precursor solution, and reduce an oxygen vacancy concentration in the indium gallium zinc oxide film, so as to improve negative bias of a threshold voltage of a channel layer made of the indium gallium zinc oxide film in a thin film transistor.

Disclosed is a substrate treating method for treating a substrate. The substrate treating method includes a dehydrating step, a dispensing step (mixed liquid dispensing step), a solidified film forming step, and a sublimation step. In the dehydrating step, a mixed liquid is dehydrated. The mixed liquid contains a sublimable substance and a solvent. In the dispensing step, the mixed liquid dehydrated in the dehydrating step is dispensed onto an upper surface of the substrate. In the solidified film forming step, the solvent evaporates from the mixed liquid on the upper surface of the substrate. In the solidified film forming step, a solidified film containing the sublimable substance is formed on the upper surface of the substrate. In the sublimation step, the solidified film sublimates.

Provided is a barrier film comprising a base layer, and an inorganic layer including Si, N, and O, and including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, wherein the film has a water vapor transmission rate of 5.0×10.sup.−4 g/m.sup.2.Math.day or less as measured under conditions of a temperature of 38° C. and 100% relative humidity after being stored at 85° C. and 85% relative humidity conditions for 250 hours, or wherein the inorganic layer has a compactness expressed through an etching rate of 0.17 nm/s in the thickness direction for an Ar ion etching condition to etch Ta.sub.2O.sub.5 at a rate of 0.09 nm/s. The barrier film has excellent barrier properties and optical properties and can be used for electronic products that are sensitive to moisture and the like.

Embodiments of the present disclosure provide a method of manufacturing a metal column using 3D printing technology. The method of manufacturing a metal column includes steps of: creasing a 3D-CAD design for printing the metal column; printing the metal column; pretreating the inner surface of a channel inside the metal column at low temperature; and coating the inner surface of the channel with a stationary phase so that the metal column is capable of separating a gas mixture into components.

The present disclosure relates to tungsten bronze thin films and method of making the same. Specifically, the present disclosure relates to a thin, homogeneous, highly conducting cubic tungsten bronze film with densely packed micron size particles and the process of making the film.

There is provided a hot-stamped body including: a steel base metal; and a metallic layer formed on a surface of the steel base metal, wherein the metallic layer includes: an interface layer that contains, in mass %, Al: 30.0 to 36.0%, has a thickness of 100 nm to 5 μm, and is located in an interface between the metallic layer and the steel base metal; and a principal layer that includes coexisting MgZn.sub.2 phases and insular FeAl.sub.2 phases, is located on the interface layer, and has a thickness of 3 μm to 40 μm.