Patent classifications
C23C18/1208
Antimicrobial coatings comprising organosilane homopolymers
Aqueous antimicrobial coating compositions are disclosed comprising at least one organosilane homopolymer, present as a distribution of polymer chain lengths, and optionally at least one amine. A method of preparing an antimicrobial coating comprises coating a surface with the aqueous antimicrobial coating composition and allowing the composition to dry into a film that exhibits residual antimicrobial efficacy against microorganisms even after mechanical abrasion of the coating. The organosilane homopolymer may comprise only 3-aminopropylsilanetriol homopolymer, mixtures of 3-aminopropylsilanetriol homopolymer, 3-chloropropylsilanetriol homopolymer and 3-(trihydroxysilyl)propyl dimethyloctadecyl ammonium chloride homopolymer, or any one of various unique organosilane homopolymers having multiple amine functionality.
SELECTIVE DEPOSITION OF METALS, METAL OXIDES, AND DIELECTRICS
Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.
ADHESION PROMOTING LAYER, METHOD FOR DEPOSITING CONDUCTIVE LAYER ON INORGANIC OR ORGANIC-INORGANIC HYBRID SUBSTRATE, AND CONDUCTIVE STRUCTURE
Provided are an adhesion promoting layer, a method for depositing a conductive layer on an inorganic or organic-inorganic hybrid substrate and a conductive structure. The adhesion promoting layer is suitable for depositing a conductive layer on an inorganic or organic-inorganic hybrid substrate, which includes a metal oxide layer and an interface layer. The metal oxide layer is disposed on the inorganic or organic-inorganic hybrid substrate. The interface layer is disposed between the metal oxide layer and the inorganic or organic-inorganic hybrid substrate. The metal oxide layer includes metal oxide and a chelating agent. The interface layer includes the metal oxide, the chelating agent and metal-nonmetal-oxide composite material.
Perhydropolysilazane compositions and methods for forming oxide films using same
A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.
Solvent management methods for gel production
Embodiments of the present invention describe a method for manufacture of a gel material comprising the steps of: forming a gel sheet by dispensing a gel precursor mixture; allowing gelation to occur to the gel precursor mixture; and cooling the formed gel with a cooling system to control reaction rate.
Plasma-assisted process of ceramization of polymer precursor on surface, surface comprising ceramic polymer
The present invention lies in the fields of chemistry and materials engineering. More specifically, the present invention describes a process of heat treatment of polymeric precursors including as active phases particle charge or a mixture of active phases with inert phases called “fillers”. It is also described a surface including ceramic polymer obtained by said process. The volumetric positive variation resulting from the formation of new phases, which for their formation, incorporate atoms from the gaseous phase, contributes to a minor shrinkage of the composition during the heat treatment process. The process of the present invention allows obtaining the desired phases in smaller treatment times and lower temperatures, when compared to a thermal treatment process as conventional pyrolysis (PC) due to the presence of highly reactive species, as for example atomic nitrogen produced by the dissociation of nitrogen molecules in the plasma environment.
OPTICAL DIFFUSER AND ITS METHOD OF MANUFACTURE
Methods of manufacture of an optical diffuser. In one embodiment, an optical diffuser is formed by providing a wafer including a silicon slice of which an upper face is covered with a first layer made of a first material itself covered with a second layer made of a second selectively etchable material with respect to the first material. The method further includes forming openings in the second layer extending up to the first layer and filling the openings in the second layer with a third material. The method yet further includes bonding a glass substrate to the wafer on the side of its upper face and removing the silicon slice.
Selective deposition of metals, metal oxides, and dielectrics
Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.
AN ANTI-FOULING TREATED HEAT EXCHANGER AND METHOD FOR PRODUCING AN ANTI-FOULING TREATED HEAT EXCHANGER
An anti-fouling coated heat exchanger in which the anti-fouling coating is a non- continuous silicon oxide film, and a method of making an anti-fouling coated heat exchanger in which the anti-fouling coating is a continuous or discontinuous silicon oxide film which can be formed with high smoothness on the internal surfaces of a closed heat exchanger.
Optical diffuser and its method of manufacture
Methods of manufacture of an optical diffuser. In one embodiment, an optical diffuser is formed by providing a wafer including a silicon slice of which an upper face is covered with a first layer made of a first material itself covered with a second layer made of a second selectively etchable material with respect to the first material. The method further includes forming openings in the second layer extending up to the first layer and filling the openings in the second layer with a third material. The method yet further includes bonding a glass substrate to the wafer on the side of its upper face and removing the silicon slice.