A substrate processing apparatus can suppress particle generation on a substrate, and can reduce a consumption amount of a processing liquid. A substrate processing apparatus 1 includes a processing chamber 30 having a processing space 31 in which a substrate W is processed; a vaporizing tank 60, configured to store the processing liquid therein, having a vaporization space 61 in which the stored processing liquid is allowed to be vaporized; a decompression driving unit 70 configured to decompress the vaporization space 61; and a control unit 18. The control unit 18 vaporizes the processing liquid into the processing gas by decompressing the vaporization space 61 without through the processing space 31, and then, vaporizes the processing liquid into the processing gas by decompressing the vaporization space 61 through the processing space 31, and supplies an inert gas into the vaporization space 61.

Electrochemical analysis method and system for monitoring and controlling the quality of electrochemical deposition and/or plating processes. The method uses a fingerprinting analysis method of an output signal to indicate whether the chemistry and/or process is operating in the normally expected range and utilizes one or more substrates as working electrode(s) and a) whereby the potential between the one or more working electrodes and one or more reference electrodes is analyzed to provide an output signal fingerprint which is represented as potential difference as a function of time or b) the input power of a process power supply to provide input energy in the form of current and/or potential between the working electrode(s) and a counter-electrode whereby the method utilizes the potential between the one or more working electrode(s) and at least one of: one or more reference electrodes; or one or more counter-electrodes; to provide an output signal fingerprint.

A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M1 to the substrate W; and a solvent supply unit 55a configured to supply a solvent N1 having a different temperature from a temperature of the plating liquid M1 to the substrate W. The solvent N1 is supplied to a preset position on the substrate W from the solvent supply unit 55a after the plating liquid M1 is supplied to the substrate W from the plating liquid supply unit 53.

An electroless semiconductor bonding structure, an electroless plating system and an electroless plating method of the same are provided. The electroless semiconductor bonding structure includes a first substrate and a second substrate. The first substrate includes a first metal bonding structure disposed adjacent to a first surface of the first substrate. The second substrate includes a second metal bonding structure disposed adjacent to a second surface of the second substrate. The first metal bonding structure connects to the second metal bonding structure at an interface by electroless bonding and the interface is substantially void free.

A substrate entire region treatment process of discharging a processing fluid of a temperature different from a surface temperature of a substrate 3 from a first nozzle 24 toward the substrate is performed while moving the first nozzle toward an outer side from an entire region treatment start position P2 located at a central portion to an entire region treatment end position P5 located at a peripheral portion. Then, after moving the first nozzle toward an inner side to a peripheral region treatment start position P6 located at an outer position than the entire region treatment start position P2, a substrate peripheral region treatment process of discharging the processing fluid from the first nozzle toward the substrate is performed while moving the first nozzle toward the outer side from the peripheral region treatment start position P6 to a peripheral region treatment stop position P7 located at a peripheral portion.

A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M1 to the substrate W; and a solvent supply unit 55a configured to supply a solvent N1 having a different temperature from a temperature of the plating liquid M1 to the substrate W. The solvent N1 is supplied to a preset position on the substrate W from the solvent supply unit 55a after the plating liquid M1 is supplied to the substrate W from the plating liquid supply unit 53.

A catalyst is imparted selectively to a plateable material portion 32 by performing a catalyst imparting processing on a substrate W having a non-plateable material portion 31 and the plateable material portion 32 formed on a surface thereof. Then, a hard mask layer 35 is formed selectively on the plateable material portion 32 by performing a plating processing on the substrate W. The non-plateable material portion 31 is made of SiO.sub.2 as a main component, and the plateable material portion 32 is made of a material including, as a main component, a material containing at least one of a OCH.sub.x group and a NH.sub.x group, a metal material containing Si as a main component, a material containing carbon as a main component or a catalyst metal material.

A plating apparatus can perform a plating process on an entire surface of a substrate uniformly. A plating apparatus 20 includes a substrate holding/rotating device 110 configured to hold and rotate a substrate 2; a discharging device 21 configured to discharge a plating liquid toward the substrate 2 held on the substrate holding/rotating device 110; and a controller 160 configured to control the substrate holding/rotating device 110 and the discharging device 21. Further, the discharging device 21 includes a first nozzle 40 having a multiple number of discharge openings 41 arranged in a radial direction of the substrate 2 or having a discharge opening 42 extended in the radial direction of the substrate 2; and a second nozzle 45 having a discharge opening 46 configured to be positioned closer to a central portion of the substrate 2 than the discharge opening of the first nozzle 40.

Provided is a semiconductor device, including: a front-back conduction-type semiconductor element; a front-side electrode formed on the front-back conduction-type semiconductor element; an electroless nickel-containing plating layer formed on the front-side electrode; and an electroless gold plating layer formed on the electroless nickel-containing plating layer, wherein the semiconductor device has a low-nickel concentration layer on a side of the electroless nickel-containing plating layer in contact with the electroless gold plating layer, and wherein the low-nickel concentration layer has a thickness smaller than that of the electroless gold plating layer.

Tubulars are immersed in electroless nickel coating solution to coat the tubulars. Prior to the coating step the tubulars are blasted with a clean medium and washed and rinsed in alkaline solution. The tubulars are arranged in a bunk for washing, rinsing and coating. LLDPE stretch wrap applied to outer portions of the tubulars prevents coating of the outer portions. The tubulars are electrically separated from the bunk and the coating solution tank, and the tank is provided with anodic protection to prevent coating of the tank. The bunk is provided with a header assembly to provide solution flow through the tubulars via nozzles on the header assembly in addition to flow caused by the vortex effect created by velocity of fluid exiting the nozzles. The bunk is arranged in the solution tank so that the tubulars are at an angle to horizontal to efficiently remove hydrogen gas. Solution flow to the header assembly is filtered to remove particulates.