Some embodiments include a method of forming a conductive structure. A metal-containing conductive material is formed over a supporting substrate. A surface of the metal-containing conductive material is exposed to at least one radical form of hydrogen and to at least one oxidant. The exposure alters at least a portion of the metal-containing conductive material to thereby form at least a portion of the conductive structure. Some embodiments include a conductive structure which has a metal-containing conductive material with a first region adjacent to a second region. The first region has a greater concentration of one or both of fluorine and boron relative to the second region.

Some embodiments include a method of forming a conductive structure. A metal-containing conductive material is formed over a supporting substrate. A surface of the metal-containing conductive material is exposed to at least one radical form of hydrogen and to at least one oxidant. The exposure alters at least a portion of the metal-containing conductive material to thereby form at least a portion of the conductive structure. Some embodiments include a conductive structure which has a metal-containing conductive material with a first region adjacent to a second region. The first region has a greater concentration of one or both of fluorine and boron relative to the second region.

The present invention concerns a method for obtaining a finished or semi-finished zirconia-based article, the surface of the article having a metallic external appearance and non-zero surface electrical conductivity, wherein the method includes the steps of: taking at least one zirconia article, pre-shaped in its finished or semi-finished form; placing said article in a chamber in which a hydrogen and carbon/nitrogen gas mixture is heated; heating said article and the gas mixture using at least one resistive element traversed by an electric current to obtain dissociation of the hydrogen and carbon/nitrogen based gas molecules and an increase in the temperature of said article; keeping said article in the reactive atmosphere thus created to obtain diffusion of the carbon/nitrogen atoms in the external surface of said article.

The present invention concerns a method for obtaining a finished or semi-finished zirconia-based article, the surface of the article having a metallic external appearance and non-zero surface electrical conductivity, wherein the method includes the steps of: taking at least one zirconia article, pre-shaped in its finished or semi-finished form; placing said article in a chamber in which a hydrogen and carbon/nitrogen gas mixture is heated; heating said article and the gas mixture using at least one resistive element traversed by an electric current to obtain dissociation of the hydrogen and carbon/nitrogen based gas molecules and an increase in the temperature of said article; keeping said article in the reactive atmosphere thus created to obtain diffusion of the carbon/nitrogen atoms in the external surface of said article.

Disclosed are a processing method for fluorination of a fluorination-target component for semiconductor fabrication equipment, which may realize high density and high strength by fluorinating the fluorination-target component using a fluorinating gas excited into plasma, and at the same time, may significantly reduce plasma contaminant particles which are generated during formation of a fluoride coating, and a fluorinated component obtained by the method.

Disclosed are a processing method for fluorination of a fluorination-target component for semiconductor fabrication equipment, which may realize high density and high strength by fluorinating the fluorination-target component using a fluorinating gas excited into plasma, and at the same time, may significantly reduce plasma contaminant particles which are generated during formation of a fluoride coating, and a fluorinated component obtained by the method.

A method for growing a transition metal dichalcogenide layer involves arranging a substrate having a first transition metal contained pad is arranged in a chemical vapor deposition chamber. A chalcogen contained precursor is arranged upstream of the substrate in the chemical vapor deposition chamber. The chemical vapor deposition chamber is heated for a period of time during which a transition metal dichalcogenides layer, containing transition metal from the first transition metal contained pad and chalcogen from the chalcogen contained precursor, is formed in an area adjacent to the first transition metal contained pad.

A method for producing metal-based micro-porous structures includes continuously feeding a solid green part and a gas flow into a tunnel reactor having an aspect ratio greater than 2, wherein the solid green part has a characteristic diffusion mass transfer dimension less than 1 mm and a gas in the gas flow is substantially free of oxidants, and chemically reacting the gas in the gas flow and the green part under a predetermined temperature profile along a length of the tunnel reactor for a sufficient time to convert the green part into a solid product having pore sizes in a range of 0.3 nm to 5 μm.

A method for producing metal-based micro-porous structures includes continuously feeding a solid green part and a gas flow into a tunnel reactor having an aspect ratio greater than 2, wherein the solid green part has a characteristic diffusion mass transfer dimension less than 1 mm and a gas in the gas flow is substantially free of oxidants, and chemically reacting the gas in the gas flow and the green part under a predetermined temperature profile along a length of the tunnel reactor for a sufficient time to convert the green part into a solid product having pore sizes in a range of 0.3 nm to 5 μm.

An apparatus and process are presented for continuous production of metal-based micro-porous structures of pore sizes from 0.3 nm to 5.0 μm from a green part of characteristic diffusion mass transfer dimension less than 1 mm through chemical reactions in a continuous flow of gas substantially free of oxygen. The produced micro-porous structures include i) thin porous metal sheets of thickness less than 200 μm and pore sizes in the range of 0.1 to 5.0 μm, ii) porous ceramic coating of thickness less than 40 μm and ceramic particle sizes of 200 nm or less on a porous metal-based support structures of pore sizes in the range of 0.1 to 5 μm.