Patent classifications
C23C8/16
Surface-treated metal plate, cell container, and cell
A surface-treated metal plate including: a metal plate; and a nickel-cobalt binary alloy layer formed on the metal plate. When a part having a content ratio of oxygen atoms of 5 atomic % or more as measured by X-ray photoelectron spectroscopic analysis is an oxide coating film, the nickel-cobalt binary alloy layer contains the oxide coating film with a thickness of 0.5 to 30 nm on a surface thereof, and when a pressure cooker test including temperature increasing, retention for 72 hours under a water-vapor atmosphere at a temperature of 105° C. and a relative humidity of 100% RH, and temperature decreasing is performed, the amount of increase in the thickness of the oxide coating film is 28 nm or less.
Surface-treated metal plate, cell container, and cell
A surface-treated metal plate including: a metal plate; and a nickel-cobalt binary alloy layer formed on the metal plate. When a part having a content ratio of oxygen atoms of 5 atomic % or more as measured by X-ray photoelectron spectroscopic analysis is an oxide coating film, the nickel-cobalt binary alloy layer contains the oxide coating film with a thickness of 0.5 to 30 nm on a surface thereof, and when a pressure cooker test including temperature increasing, retention for 72 hours under a water-vapor atmosphere at a temperature of 105° C. and a relative humidity of 100% RH, and temperature decreasing is performed, the amount of increase in the thickness of the oxide coating film is 28 nm or less.
INTEGRATED PLATFORM FOR TIN PVD AND HIGH-K ALD FOR BEOL MIM CAPACITOR
Methods and apparatus for processing a substrate are provided herein. For example, a method of processing a substrate in an integrated tool comprising a physical vapor deposition chamber and a thermal atomic layer deposition chamber comprises depositing, in the physical vapor deposition chamber, a bottom layer of titanium nitride on the substrate to a thickness of about 10 nm to about 80 nm, transferring, without vacuum break, the substrate from the physical vapor deposition chamber to the thermal atomic layer deposition chamber for depositing a nanolaminate layer of high-k material atop the bottom layer of titanium nitride to a thickness of about 2 nm to about 10 nm, and transferring, without vacuum break, the substrate from the thermal atomic layer deposition chamber to the physical vapor deposition chamber for depositing a top layer of titanium nitride atop the nanolaminate layer of high-k material to a thickness of about 10 nm to about 80 nm.
METHOD FOR ELECTROCHEMICALLY GROWN YTTRIA OR YTTRIUM OXIDE ON SEMICONDUCTOR PROCESSING EQUIPMENT
The present disclosure generally relates to methods of electro-chemically forming yttria or yttrium oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of yttria or yttrium oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited yttria or yttrium oxide thereon.
METHOD FOR ELECTROCHEMICALLY GROWN YTTRIA OR YTTRIUM OXIDE ON SEMICONDUCTOR PROCESSING EQUIPMENT
The present disclosure generally relates to methods of electro-chemically forming yttria or yttrium oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of yttria or yttrium oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited yttria or yttrium oxide thereon.
Methods of treating metal surfaces and devices formed thereby
Embodiments of the present invention relate generally to methods of treating metal surfaces to enhance adhesion or binding to substrates, and devices formed thereby. In some embodiments of the present invention, methods of achieving improved bonding strength without roughening the topography of a metal surface are provided. The metal surface obtained by this method provides strong bonding to resin layers. The bonding interface between the treated metal and the resin layer exhibits resistance to heat, moisture, and chemicals involved in post-lamination process steps, and therefore can suitably be used in the production of PCB's. Methods according to some embodiments of the present invention are especially useful in the fabrication of high density multilayer PCB's, in particular for PCB's having circuits with line/spacing of equal to and less than 10 microns. Methods according to other embodiments of the present invention are particularly useful in the coating of metal surfaces in a wide variety of applications.
Methods of treating metal surfaces and devices formed thereby
Embodiments of the present invention relate generally to methods of treating metal surfaces to enhance adhesion or binding to substrates, and devices formed thereby. In some embodiments of the present invention, methods of achieving improved bonding strength without roughening the topography of a metal surface are provided. The metal surface obtained by this method provides strong bonding to resin layers. The bonding interface between the treated metal and the resin layer exhibits resistance to heat, moisture, and chemicals involved in post-lamination process steps, and therefore can suitably be used in the production of PCB's. Methods according to some embodiments of the present invention are especially useful in the fabrication of high density multilayer PCB's, in particular for PCB's having circuits with line/spacing of equal to and less than 10 microns. Methods according to other embodiments of the present invention are particularly useful in the coating of metal surfaces in a wide variety of applications.
High Pressure Oxidation of Metal Films
Methods of processing thin film by oxidation at high pressure are described. The methods are generally performed at pressures greater than 2 bar. The methods can be performed at lower temperatures and have shorter exposure times than similar methods performed at lower pressures. Some methods relate to oxidizing tungsten films to form self-aligned pillars.
High Pressure Oxidation of Metal Films
Methods of processing thin film by oxidation at high pressure are described. The methods are generally performed at pressures greater than 2 bar. The methods can be performed at lower temperatures and have shorter exposure times than similar methods performed at lower pressures. Some methods relate to oxidizing tungsten films to form self-aligned pillars.
SLIDING BEARING MADE OF TITANIUM ALLOY
A titanium alloy spherical sliding bearing includes an inner ring made of an α+β or α type titanium alloy, and having a convex spherical sliding surface region on the outer periphery of the inner ring. The bearing further includes an outer ring in sliding contact with the sliding surface region via a lubricative liner. The sliding surface region contains primary and secondary α crystal grains, and includes an oxygen diffusion layer of which the oxygen concentration is not less than 0.8% by mass, and the hardness of the surface is not less than 550 Hv, and the oxygen concentration continuously decreases with depth from the surface of the sliding surface region.