Disclosed is a method for surface-modifying titanium alloy, comprising the following steps: carburizing titanium alloy in solid carburizing agent A and solid carburizing agent B, and then performing gas co-infiltration to realize surface modification treatment of titanium alloy; the solid carburizing agent A includes raw materials of charcoal powder a, barium carbonate, calcium carbonate, barium acetate, urea and cerium carbonate, and the solid carburizing agent B includes raw materials of charcoal powder b, barium carbonate, calcium carbonate and cerium carbonate; and the gases used in the gas co-infiltration are ammonia, air and acetylene.

Disclosed is a method for surface-modifying titanium alloy, comprising the following steps: carburizing titanium alloy in solid carburizing agent A and solid carburizing agent B, and then performing gas co-infiltration to realize surface modification treatment of titanium alloy; the solid carburizing agent A includes raw materials of charcoal powder a, barium carbonate, calcium carbonate, barium acetate, urea and cerium carbonate, and the solid carburizing agent B includes raw materials of charcoal powder b, barium carbonate, calcium carbonate and cerium carbonate; and the gases used in the gas co-infiltration are ammonia, air and acetylene.

In one aspect, a highly scalable diffusion-couple apparatus includes a transfer chamber configured to load a wafer into a process chamber. The process chamber is configured to receive the wafer substrate from the transfer chamber. The process chamber comprises a chamber for growth of a diffusion material on the wafer. A heatable bottom substrate disk includes a first heating mechanism. The heatable bottom substrate disk is fixed and heatable to a specified temperature. The wafer is placed on the heatable bottom substrate disk. A heatable top substrate disk comprising a second heating mechanism. The heatable top substrate disk is configured to move up and down along an x axis and an x prime axis to apply a mechanical pressure to the wafer on the heatable bottom substrate disk. While the heatable top substrate disk applies the mechanical pressure a chamber pressure is maintained at a specified low value. The first heating mechanism and the second heating mechanism can be independently tuned to any value in the working range.

In one aspect, a highly scalable diffusion-couple apparatus includes a transfer chamber configured to load a wafer into a process chamber. The process chamber is configured to receive the wafer substrate from the transfer chamber. The process chamber comprises a chamber for growth of a diffusion material on the wafer. A heatable bottom substrate disk includes a first heating mechanism. The heatable bottom substrate disk is fixed and heatable to a specified temperature. The wafer is placed on the heatable bottom substrate disk. A heatable top substrate disk comprising a second heating mechanism. The heatable top substrate disk is configured to move up and down along an x axis and an x prime axis to apply a mechanical pressure to the wafer on the heatable bottom substrate disk. While the heatable top substrate disk applies the mechanical pressure a chamber pressure is maintained at a specified low value. The first heating mechanism and the second heating mechanism can be independently tuned to any value in the working range.

A method of manufacturing a roller cone for a drill bit includes: selectively carburizing a land of the roller cone between a plurality of spots on the land for protection against erosion; after carburization, forming sockets in the roller cone at the spots; and mounting cermet inserts in the sockets.

A method of manufacturing a roller cone for a drill bit includes: selectively carburizing a land of the roller cone between a plurality of spots on the land for protection against erosion; after carburization, forming sockets in the roller cone at the spots; and mounting cermet inserts in the sockets.

Provided is a method for increasing magnetic induction intensity of soft magnetic metallic materials. The method includes carburizing or carbonitriding the soft magnetic metallic materials with carbon source or a carbonitriding agent by a heat treatment process, to increase the magnetic induction intensity of the soft magnetic metallic materials, wherein the soft magnetic metallic materials are amorphous materials, nanocrystals, silicon steel, or pure iron.

A method for treating a workpiece made of self-passivating metal and having a Beilby layer including applying a coating to a surface of the workpiece, the coating including a reagent, treating the coating to thermally alter the reagent, wherein the thermal altering of the reagent activates and/or hardens the surface.

In one aspect, a highly scalable diffusion-couple apparatus includes a transfer chamber configured to load a wafer into a process chamber. The process chamber is configured to receive the wafer substrate from the transfer chamber. The process chamber comprises a chamber for growth of a diffusion material on the wafer. A heatable bottom substrate disk includes a first heating mechanism. The heatable bottom substrate disk is fixed and heatable to a specified temperature. The wafer is placed on the heatable bottom substrate disk. A heatable top substrate disk comprising a second heating mechanism. The heatable top substrate disk is configured to move up and down along an x axis and an x prime axis to apply a mechanical pressure to the wafer on the heatable bottom substrate disk. While the heatable top substrate disk applies the mechanical pressure a chamber pressure is maintained at a specified low value. The first heating mechanism and the second heating mechanism can be independently tuned to any value in the working range.

In one aspect, a highly scalable diffusion-couple apparatus includes a transfer chamber configured to load a wafer into a process chamber. The process chamber is configured to receive the wafer substrate from the transfer chamber. The process chamber comprises a chamber for growth of a diffusion material on the wafer. A heatable bottom substrate disk includes a first heating mechanism. The heatable bottom substrate disk is fixed and heatable to a specified temperature. The wafer is placed on the heatable bottom substrate disk. A heatable top substrate disk comprising a second heating mechanism. The heatable top substrate disk is configured to move up and down along an x axis and an x prime axis to apply a mechanical pressure to the wafer on the heatable bottom substrate disk. While the heatable top substrate disk applies the mechanical pressure a chamber pressure is maintained at a specified low value. The first heating mechanism and the second heating mechanism can be independently tuned to any value in the working range.