Various methods and systems are provided for a cathode cup having a surface texturing to aid in adherence of emitter deposited films. In one embodiment, a method may include chemically and/or mechanically texturing a surface of a cathode cup to form a plurality of features with a higher than threshold depth of each feature, the surface of the cathode cup facing an emitter coupled to the cathode cup.

Various methods and systems are provided for a cathode cup having a surface texturing to aid in adherence of emitter deposited films. In one embodiment, a method may include chemically and/or mechanically texturing a surface of a cathode cup to form a plurality of features with a higher than threshold depth of each feature, the surface of the cathode cup facing an emitter coupled to the cathode cup.

A method of selectively etching a metal component of a workpiece further comprising a ferromagnetic insulator component. The method comprises contacting the metal component with an etchant solution. The etchant solution comprises a basic etchant and a solvent. The method is useful in the context of the fabrication of semiconductor-superconductor-ferromagnetic insulator hybrid devices, for example. The etchant solution may not attack the ferromagnetic insulator component. Also provided is a composition for etching a metal, and a kit comprising the composition and a composition for depositing a styrene-acrylate co-polymer on a surface.

A method of processing a polycrystalline diamond (PCD) material having a non- diamond phase with a catalyst/solvent material includes leaching an amount of the catalyst/solvent from the PCD material by exposing at least a portion of the PCD material to a leaching mixture, the leaching mixture comprising hydrofluoric acid at a molar concentration of between 12 M to around 28 M, nitric acid at a molar concentration of between around 3 M to around 10 M, and water.

The object of the present invention is to provide a metal plate capable of manufacturing a deposition mask in which dispersion of positions of through-holes is restrained. A thermal recovery rate is defined as parts per million of a difference a distance between to measurement points on a sample before a heat treatment and a distance therebetween after the heat treatment, relative to the distance therebetween before the heat treatment. In this case, an average value of the thermal recovery rates of the respective samples is not less than −10 ppm and not more than +10 ppm, and (2) a dispersion of the thermal recovery rates of the respective samples is not more than 20 ppm.

The object of the present invention is to provide a metal plate capable of manufacturing a deposition mask in which dispersion of positions of through-holes is restrained. A thermal recovery rate is defined as parts per million of a difference a distance between to measurement points on a sample before a heat treatment and a distance therebetween after the heat treatment, relative to the distance therebetween before the heat treatment. In this case, an average value of the thermal recovery rates of the respective samples is not less than −10 ppm and not more than +10 ppm, and (2) a dispersion of the thermal recovery rates of the respective samples is not more than 20 ppm.

A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a substrate having a working surface exposing a metal layer and having at least one other material exposed or underneath the metal layer; and differentially etching the metal layer relative to the other material by exposing the substrate to a controlled gas-phase environment containing an anhydrous halogen compound.

A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a substrate having a working surface exposing a metal layer and having at least one other material exposed or underneath the metal layer; and differentially etching the metal layer relative to the other material by exposing the substrate to a controlled gas-phase environment containing an anhydrous halogen compound.

Exemplary integrated cluster tools may include a factory interface including a first transfer robot. The tools may include a wet clean system coupled with the factory interface at a first side of the wet clean system. The tools may include a load lock chamber coupled with the wet clean system at a second side of the wet clean system opposite the first side of the wet clean system. The tools may include a first transfer chamber coupled with the load lock chamber. The first transfer chamber may include a second transfer robot. The tools may include a second transfer chamber coupled with the first transfer chamber. The second transfer chamber may include a third transfer robot. The tools may include a metal deposition chamber coupled with the transfer chamber.

Exemplary integrated cluster tools may include a factory interface including a first transfer robot. The tools may include a wet clean system coupled with the factory interface at a first side of the wet clean system. The tools may include a load lock chamber coupled with the wet clean system at a second side of the wet clean system opposite the first side of the wet clean system. The tools may include a first transfer chamber coupled with the load lock chamber. The first transfer chamber may include a second transfer robot. The tools may include a second transfer chamber coupled with the first transfer chamber. The second transfer chamber may include a third transfer robot. The tools may include a metal deposition chamber coupled with the transfer chamber.