An etchant composition for etching a triple layer metal wiring structure of molybdenum/copper/molybdenum or molybdenum alloy/copper/molybdenum alloy, and a use thereof are disclosed. The etchant composition includes hydrogen peroxide, glycol, an etching inhibitor, a chelating agent, an etching additive, a pH adjuster, and water, The etchant can not only slow down the decomposition of hydrogen peroxide, but also extend the lifespan of the etchant, thereby greatly reducing the costs of the etchant in the manufacturing process, and improving the safety factor of the etchant.

The disclosure provides chemical mechanical polishing compositions and methods for polishing polysilicon films with high removal rates. The compositions include 1) an abrasive; 2) at least one compound of structure (I): ##STR00001##
3) at least one compound of structure (II): ##STR00002##
and 4) water; in which the composition does not include tetramethylammonium hydroxide or a salt thereof. The variables n, R.sub.1-R.sub.7, X, Y, and Z.sub.1-Z.sub.3 in structures (I) and (II) are defined in the Specification. The synergistic effect of the compounds of structures (I) and (II) in these chemical mechanical polishing compositions leads to high polysilicon films material removal rate during polishing.

The disclosure provides chemical mechanical polishing compositions and methods for polishing polysilicon films with high removal rates. The compositions include 1) an abrasive; 2) at least one compound of structure (I): ##STR00001##
3) at least one compound of structure (II): ##STR00002##
and 4) water; in which the composition does not include tetramethylammonium hydroxide or a salt thereof. The variables n, R.sub.1-R.sub.7, X, Y, and Z.sub.1-Z.sub.3 in structures (I) and (II) are defined in the Specification. The synergistic effect of the compounds of structures (I) and (II) in these chemical mechanical polishing compositions leads to high polysilicon films material removal rate during polishing.

A surface treatment agent capable of forming a hexavalent chromium-free chemical conversion coating that can provide an excellent corrosion-resistant coating on various metallic materials; a metallic material having a surface treatment coating obtained therefrom; and a method of producing the same. A free fluorine ion-containing surface treatment agent for surface-treating a metallic material, which is obtained by mixing at least one supply source (A) of trivalent chromium-containing ions A; a supply source (B) of ions B that are at least one selected from titanium-containing ions and zirconium-containing ions; a water-soluble or water-dispersible compound (C) containing an alkoxysilyl group, an aromatic ring, a hydroxy group directly bonded to the aromatic ring, and at least one of primary, secondary, tertiary and quaternary amino groups, wherein the alkoxysilyl group is bonded to the nitrogen atom of the amino group directly or via an alkylene group; and a fluorine-containing compound (D) providing fluorine-containing ions.

Methods for modifying the surface termination of two-dimensional (2D) transition metal carbides (MXenes) are provided. The methods, which allow for versatile chemical modification of the terminating anions via halide exchange or substitution and elimination reactions in molten inorganic salts, provide a processing approach that is widely applicable to MXenes as a broad class of functional materials.

Methods for modifying the surface termination of two-dimensional (2D) transition metal carbides (MXenes) are provided. The methods, which allow for versatile chemical modification of the terminating anions via halide exchange or substitution and elimination reactions in molten inorganic salts, provide a processing approach that is widely applicable to MXenes as a broad class of functional materials.

Provided are: a semiconductor treatment liquid containing a hypobromite ion, in which the concentration of the hypobromite ion is 0.1 μmol/L or more and less than 0.001 mol/L; a RuO.sub.4 gas generation inhibitor containing an onium salt composed of an onium ion and a bromine-containing ion, in which the hypobromite ion concentration is 0.1 μmol/L or more and less than 0.001 mol/L; and a method of producing a halogen oxyacid, the method including allowing a bromine salt, an organic alkali, and a halogen to react with each other to obtain the halogen oxyacid.

A dry etching method which includes a dry etching step in which an etching gas containing a halogen fluoride being a compound of bromine or iodine and fluorine is brought into contact with a member to be etched (12) including an etching target being a target of etching with the etching gas to etch the etching target without using plasma. The etching target contains copper. Additionally, the dry etching step is performed under temperature conditions of from 140° C. to 300° C. Also disclosed is a method for manufacturing a semiconductor element and a cleaning method using the dry etching method.

An etchant composition for preparing graphene having low sheet resistance includes sulfuric acid, hydrogen peroxide, an N-heterocyclic aromatic compound, aromatic boric acid, and purified water. The etchant composition exhibits an effect of remarkably reducing the sheet resistance of graphene produced through chemical vapor deposition (CVD).

According to one embodiment, an etching solution is provided. The etching solution is used for etching of silicon nitride. The etching solution includes: phosphoric acid; tetrafluoroboric acid; a silicon compound; water; and at least one of sulfuric acid and an ionic liquid.