An etching method for quickly removing a seed layer that is formed of titanium and/or a titanium alloy, while suppressing dissolution of other metals from copper wiring lines and the like, for continuous and stable processing; and a composition which is used for this etching method. The composition comprises, based on a total amount of the composition, 0.01 to 0.23% by mass hydrogen peroxide, 0.2 to 3% by mass fluoride, 0.0005 to 0.025% by mass of a halide ion other than a fluoride ion, and water. A method for using the composition to produce a substrate is also described.

The disclosed and claimed subject matter relates to wet etchants exhibiting high copper and cobalt etching rates where the etching rate ratio between the two metals can be varied. The wet etchants have a composition comprising a formulation consisting of: at least one alkanolamine having at least two carbon atoms, at least one amino substituent and at least one hydroxyl substituent with the amino and hydroxyl substituents attached to two different carbon atoms; at least one pH adjuster for adjusting the pH of the formulation to between approximately 9 and approximately 12; at least one chelating agent; and water.

A method for recycling a rare earth magnet is described. The rare earth magnet has a film containing Ni on the surface thereof, and the method involves immersing the rare earth magnet in a stripping solution containing a derivative of nitrobenzene, ethylenediamine, and ammonia. This strips the Ni on the surface of the rare earth magnet without deteriorating the characteristics of the rare earth magnet, thereby improving its product yield.

A method for recycling a rare earth magnet is described. The rare earth magnet has a film containing Ni on the surface thereof, and the method involves immersing the rare earth magnet in a stripping solution containing a derivative of nitrobenzene, ethylenediamine, and ammonia. This strips the Ni on the surface of the rare earth magnet without deteriorating the characteristics of the rare earth magnet, thereby improving its product yield.

An etching composition for a silver-containing thin film, the etching composition comprising an inorganic acid compound, a sulfonic acid compound, an organic acid compound, a nitrate, a metal oxidizing agent, an amino acid compound, and water.

A glass wiring board that can be kept from cracking by better preventing concentration of stresses in a glass plate on which a conductor layer including an electrolytic copper plating layer is provided, the wiring board includes: a glass plate; a first metal layer covering at least a part of the glass plate; and a second metal layer covering at least a part of the first metal layer, and the area of the first metal layer in contact with the second metal layer is smaller than the area of the second metal layer facing the first metal layer.

A neutral to alkaline chemical mechanical composition for polishing tungsten includes, as initial components: water; an oxidizing agent selected from an iodate compound, a periodate compound and mixtures thereof; colloidal silica abrasive particles including a nitrogen-containing compound; optionally, a pH adjusting agent; and, optionally, a biocide. The chemical mechanical polishing method includes providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the neutral to alkaline chemical mechanical polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate and, further, to at least inhibit static etch of the tungsten.

An etchant composition for etching a triple layer metal wiring structure of molybdenum/copper/molybdenum or molybdenum alloy/copper/molybdenum alloy, and a use thereof are disclosed. The etchant composition includes hydrogen peroxide, glycol, an etching inhibitor, a chelating agent, an etching additive, a pH adjuster, and water, The etchant can not only slow down the decomposition of hydrogen peroxide, but also extend the lifespan of the etchant, thereby greatly reducing the costs of the etchant in the manufacturing process, and improving the safety factor of the etchant.

An etchant composition for etching a triple layer metal wiring structure of molybdenum/copper/molybdenum or molybdenum alloy/copper/molybdenum alloy, and a use thereof are disclosed. The etchant composition includes hydrogen peroxide, glycol, an etching inhibitor, a chelating agent, an etching additive, a pH adjuster, and water, The etchant can not only slow down the decomposition of hydrogen peroxide, but also extend the lifespan of the etchant, thereby greatly reducing the costs of the etchant in the manufacturing process, and improving the safety factor of the etchant.

A treatment liquid is a treatment liquid including water; a cationic compound; an anionic compound selected from the group consisting of a resin having a carboxy group or a salt thereof, a resin having a sulfo group or a salt thereof, a resin having a phosphorous acid group or a salt thereof, and a resin having a phosphoric acid group or a salt thereof; and an oxidizing agent, in which the treatment liquid has a pH of 7.0 or less, and the treatment liquid is substantially free of abrasive grains.