In manufacturing a printed circuit board using a semi-additive method, a removal liquid that has been used in removing a nickel-chromium-containing layer (5) is regenerated by contacting the removal liquid with a chelate resin having a functional group represented by a following formula (1) :

##STR00001##

where a plurality of Rs are identical divalent hydrocarbon groups having 1 to 5 carbons, and a portion of hydrogen atoms may be substituted with halogen atoms.

An aqueous etching composition comprising: (a) functionalized urea, biuret and guanidine derivatives and/or salts thereof selected from compounds having formulae I or II:

##STR00001## wherein X and Y are independently selected from oxygen, NRR′ and NR.sup.5, R, R′ and R.sup.5 are independently selected from R.sup.1, hydrogen, polyethylene glycols, aromatic compounds, and C.sub.1-C.sub.4 alkyl, wherein the aromatic compounds and C.sub.1-C.sub.4 alkyl optionally comprise at least one substituent selected as OR.sup.6, R.sup.6 is selected from hydrogen and C.sub.1-C.sub.4alkyl, X and Y can be identical or different; R.sup.1 and R.sup.2 are independently selected from hydrogen, alkyl compounds, amines, and nitrogen-comprising heteroaromatic compounds, R.sup.1 and R.sup.2 can be identical or different, with the proviso that R.sup.1 cannot be hydrogen, and with the proviso that in compounds having formula I R.sup.1 cannot be hydrogen or alkyl compound if X is oxygen; m is an integer from 1 to 4, and n is an integer from 0 to 8; wherein m and n can be identical or different; (b) an oxidizing agent; and wherein the composition comprises a pH from 7.1 to 14.

An aqueous etching composition comprising: (a) functionalized urea, biuret and guanidine derivatives and/or salts thereof selected from compounds having formulae I or II:

##STR00001## wherein X and Y are independently selected from oxygen, NRR′ and NR.sup.5, R, R′ and R.sup.5 are independently selected from R.sup.1, hydrogen, polyethylene glycols, aromatic compounds, and C.sub.1-C.sub.4 alkyl, wherein the aromatic compounds and C.sub.1-C.sub.4 alkyl optionally comprise at least one substituent selected as OR.sup.6, R.sup.6 is selected from hydrogen and C.sub.1-C.sub.4alkyl, X and Y can be identical or different; R.sup.1 and R.sup.2 are independently selected from hydrogen, alkyl compounds, amines, and nitrogen-comprising heteroaromatic compounds, R.sup.1 and R.sup.2 can be identical or different, with the proviso that R.sup.1 cannot be hydrogen, and with the proviso that in compounds having formula I R.sup.1 cannot be hydrogen or alkyl compound if X is oxygen; m is an integer from 1 to 4, and n is an integer from 0 to 8; wherein m and n can be identical or different; (b) an oxidizing agent; and wherein the composition comprises a pH from 7.1 to 14.

A regenerating method of a removal liquid including: removing a nickel-chromium-containing layer from a substrate using the removal liquid at a time of manufacturing a printed circuit board by a semi-additive method, the substrate including the nickel-chromium-containing layer and a copper-containing layer; collecting the removal liquid that has been used; and contacting the collected removal liquid in collecting the removal liquid with a chelate resin, wherein the chelate resin includes a functional group represented by a following formula (1):

##STR00001##

where a plurality of Rs are identical divalent hydrocarbon groups having 1 to 5 carbons, and a portion of hydrogen atoms in the hydrocarbon groups are substituted with halogen atoms or not substituted with a halogen atom.

A regenerating method of a removal liquid including: removing a nickel-chromium-containing layer from a substrate using the removal liquid at a time of manufacturing a printed circuit board by a semi-additive method, the substrate including the nickel-chromium-containing layer and a copper-containing layer; collecting the removal liquid that has been used; and contacting the collected removal liquid in collecting the removal liquid with a chelate resin, wherein the chelate resin includes a functional group represented by a following formula (1):

##STR00001##

where a plurality of Rs are identical divalent hydrocarbon groups having 1 to 5 carbons, and a portion of hydrogen atoms in the hydrocarbon groups are substituted with halogen atoms or not substituted with a halogen atom.

The present invention refers to an electrolytic treatment device having an anodic compartment comprising a non-chromium (VI) etching solution to be treated and immersed therein an anode. The anodic compartment is separated by a membrane from a cathodic compartment comprising a cathodic solution comprising an inorganic acid, wherein the anode and the cathode are used comprising or consisting of a ternary or higher Pb alloy with Sn and at least one further metal selected from the group consisting of Sb, Ag, Co, Bi and combinations thereof. Moreover, a method for etching plastic parts is provided as well.

A cleaning method for a by-product including a refractory material or a metal compound includes a reforming process and an etching process. In the reforming process, a surface of the by-product is reformed using nitrogen-containing gas and hydrogen-containing gas. In the etching process, the reformed surface is etched using halogen-containing gas and inert gas.

A cleaning method for a by-product including a refractory material or a metal compound includes a reforming process and an etching process. In the reforming process, a surface of the by-product is reformed using nitrogen-containing gas and hydrogen-containing gas. In the etching process, the reformed surface is etched using halogen-containing gas and inert gas.

The present invention discloses an etchant and an etching method for a copper-molybdenum film layer. The etchant includes a main etchant, and the main etchant includes hydrogen peroxide, a chelating agent, a first inorganic acid, and water. A mass percentage of the chelating agent in the main etchant is in a range of 2% to 10%, a mass percentage of the first inorganic acid in the main etchant is in a range of 1% to 10%, and a mass percentage of the hydrogen peroxide in the main etchant is in a range of 4% to 10%.

The present invention refers to an electrolytic treatment device having an anodic compartment comprising a non-chromium (VI) etching solution to be treated and immersed therein an anode. The anodic compartment is separated by a membrane from a cathodic compartment comprising a cathodic solution comprising an inorganic acid, wherein the anode and the cathode are used comprising or consisting of a ternary or higher Pb alloy with Sn and at least one further metal selected from the group consisting of Sb, Ag, Co, Bi and combinations thereof. Moreover, a method for etching plastic parts is provided as well.