Disclosed is a dry etching method for etching a metal film on a substrate with an etching gas containing a β-diketone and an additive gas, wherein the metal film contains a metal element capable of forming a complex with the β-diketone; and wherein the amount of water contained in the etching gas is 30 mass ppm or less relative to the amount of the β-diketone. It is preferable that the β-diketone used for the dry etching method is supplied from a β-diketone filled container, wherein the β-diketone filled container has a sealed container body filled with a β-diketone whose water content is 15 mass ppm or less relative to the β-diketone. This etching method enables etching of the metal film while suppressing etching rate variations from the initial stage to the later stage of use of the filled container.

Disclosed is a dry etching method for etching a metal film on a substrate with an etching gas containing a β-diketone and an additive gas, wherein the metal film contains a metal element capable of forming a complex with the β-diketone; and wherein the amount of water contained in the etching gas is 30 mass ppm or less relative to the amount of the β-diketone. It is preferable that the β-diketone used for the dry etching method is supplied from a β-diketone filled container, wherein the β-diketone filled container has a sealed container body filled with a β-diketone whose water content is 15 mass ppm or less relative to the β-diketone. This etching method enables etching of the metal film while suppressing etching rate variations from the initial stage to the later stage of use of the filled container.

Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

A decorative work piece or component, such as a decorative automotive trim component, and method for plating a work piece is provided. An electroless layer of material is applied to the work piece using an electroless plating process. A barrier in electrical conductivity is provided on the work piece to divide the work piece into a first segment and a second segment which are substantially electrically insulated from one another, prior to electroplating the work piece. A plurality of methods are disclosed for dividing the work piece into the first and second segments. The component includes different surface finishes on each of the electrically isolated segments, with the finishes having different appearance, gloss level, color, and/or distinction of image as a result of electroplating and without post-electroplating mechanical alteration and assembly.

Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

Provided is a plasma etching method which enables etching with high accuracy while controlling and reducing surface roughness of a transition metal film. The etching is performed for the transition metal film, which is formed on a sample and contains a transition metal element, by a first step of isotropically generating a layer of transition metal oxide on a surface of the transition metal film while a temperature of the sample is maintained at 100° C. or lower, a second step of raising the temperature of the sample to a predetermined temperature of 150° C. or higher and 250° C. or lower while a complexation gas is supplied to the layer of transition metal oxide, a third step of subliming and removing a reactant generated by an reaction between the complexation gas and the transition metal oxide formed in the first step while the temperature of the sample is maintained at 150° C. or higher and 250° C. or lower, and a fourth step of cooling the sample.

Embodiments disclosed herein include methods of developing a metal oxo photoresist. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a vacuum chamber, where the metal oxo photoresist comprises exposed regions and unexposed regions. In an embodiment, the unexposed regions comprise a higher carbon concentration than the exposed regions. The method may further comprise vaporizing a halogenating agent into the vacuum chamber, where the halogenating agent reacts with either the unexposed regions or the exposed regions to produce a volatile byproduct. In an embodiment, the method may further comprise purging the vacuum chamber.

Embodiments disclosed herein include methods of developing a metal oxo photoresist. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a vacuum chamber, where the metal oxo photoresist comprises exposed regions and unexposed regions. In an embodiment, the unexposed regions comprise a higher carbon concentration than the exposed regions. The method may further comprise vaporizing a halogenating agent into the vacuum chamber, where the halogenating agent reacts with either the unexposed regions or the exposed regions to produce a volatile byproduct. In an embodiment, the method may further comprise purging the vacuum chamber.