A method of producing a silicon-plated metal sheet, comprises: melting at least one of a silicon-containing alkali metal salt or a silicon-containing ammonium salt in a molten salt comprising lithium chloride, potassium chloride, and an alkali metal fluoride to prepare a molten salt electrolytic bath; and performing constant-current pulse electrolysis or constant-potential pulse electrolysis with a metal sheet, serving as a cathode, immersed in the molten-salt electrolytic bath under conditions of a pulse duration of from 0.1 seconds to 3.0 seconds and a duty ratio of from 0.5 to 0.94 to thereby form a silicon layer on the metal sheet.

Methods and systems for removing impurities from an electrolytic salt are disclosed. After removal of impurities from the salt, the salt can be subjected to electrorefining to produce high-purity materials, for example silicon. Impurities are removed from the salt using a system that includes a first working electrode, a counter electrode, and at least one reference electrode. A second working electrode can also be utilized. The salt may be utilized in an electrorefining system, for example a system operated in a single phase or multiple phase operation to produce high-purity materials, such as solar-grade silicon.

According to the present invention, a wiring substrate (100) has a first terminal (112) and a second terminal (114). The second terminal (114) is electrically connected to the first terminal (112). A chip (200) has a working electrode (222) and a terminal (224). The terminal (224) is electrically connected to the working electrode (222). An electronic element (300) has a current-voltage conversion circuit (310) and a terminal (312). The terminal (312) is electrically connected to the current-voltage conversion circuit (310). The chip (200) overlaps with the wiring substrate (100). The terminal (224) of the chip (200) is electrically connected to the first terminal (112) of the wiring substrate (100). The electronic element (300) overlaps with the wiring substrate (100). The terminal (312) of the electronic element (300) is electrically connected to the second terminal (114) of the wiring substrate (100).

According to the present invention, a wiring substrate (100) has a first terminal (112) and a second terminal (114). The second terminal (114) is electrically connected to the first terminal (112). A chip (200) has a working electrode (222) and a terminal (224). The terminal (224) is electrically connected to the working electrode (222). An electronic element (300) has a current-voltage conversion circuit (310) and a terminal (312). The terminal (312) is electrically connected to the current-voltage conversion circuit (310). The chip (200) overlaps with the wiring substrate (100). The terminal (224) of the chip (200) is electrically connected to the first terminal (112) of the wiring substrate (100). The electronic element (300) overlaps with the wiring substrate (100). The terminal (312) of the electronic element (300) is electrically connected to the second terminal (114) of the wiring substrate (100).

Provided are methods of forming active materials for electrochemical cells using low-temperature electrochemical deposition, e.g., less than 200° C. Specifically, these processes allow precise control of the morphology, composition, and size of deposited structures. For example, the deposited structure may be doped, alloyed, or surface treated during their deposition using a combination of different precursors. In particular, silicon structure may be pre-lithiated while these structures are being formed. The selection of working electrodes (surface size and properties), electrolyte composition, and other parameters result in different types of structures, e.g., precipitating from the electrolyte or deposited on the electrode. Low-temperature plating does not require a lot of energy and volatile and invisible precursors. Furthermore, this plating produces a more confined waste stream, suitable for post-reaction recycling. Finally, low-temperature electrochemical deposition can be readily scaled up such that plating bathes and electrode sizes can be chosen to fit the production requirements.

Photoactive silicon films may be formed by electrodeposition from a molten salt electrolyte. In an embodiment, SiO.sub.2 is electrochemically reduced in a molten salt bath to deposit silicon on a carbonaceous substrate.

It is the object of the present invention to present a method of producing silicon, characterized by mixing silicon dioxide and at least one metal oxide at an elevated temperate wherein said oxide and silicon form a eutectic mixture or eutectic system.

It is the object of the present invention to present a method of producing silicon, characterized by mixing silicon dioxide and at least one metal oxide at an elevated temperate wherein said oxide and silicon form a eutectic mixture or eutectic system.

Provided are methods of forming active materials for electrochemical cells using low-temperature electrochemical deposition, e.g., at less than 200? C. Specifically, these processes allow precise control of the morphology, composition, and/or size of the deposited structures. For example, a deposited structure may be doped, alloyed, or surface treated during its formation using a combination of different precursors. In particular, a silicon structure may be prelithiated while being formed. Different working electrodes (e.g., with different surface sizes and properties) allow forming different types of structures, e.g., precipitating particles from the solution or specific types of films deposited on the working electrode. These processes require minimal energy and do not use volatile precursors. Furthermore, these processes produce a more confined waste stream, suitable for post-reaction recycling. Finally, low-temperature electrochemical deposition can be readily scaled up.

A method of manufacturing silicon via a solid oxide membrane electrolysis process, including providing a crucible, providing a flux including silica within the crucible, providing a cathode in the crucible in electrical contact with the flux, and providing an anode disposed in the crucible spaced apart from the cathode and in electrical contact with the flux. The cathode includes a silicon-absorbing portion in fluid communication with the flux. The anode includes a solid oxide membrane around at least a portion of the anode. The method also includes generating an electrical potential between the cathode and anode sufficient to reduce silicon at an operating temperature, and cooling the silicon-absorbing portion to below the operating temperature, and precipitating out the silicon from the silicon-absorbing portion. The silicon-absorbing portion preferentially absorbs silicon, the silicon-absorbing portion is a liquid metal at the operating temperature, and the solid oxide membrane is permeable to oxygen.