The present application relates to a substrate transfer device, comprising a horizontally arranged cross beam, and support beams longitudinally arranged at two ends of the cross beam, wherein a substrate carrier is suspended on the cross beam, the substrate carrier is located between the two support beams, and the substrate carrier is parallel to a plane where the two support beams are located, the substrate carrier comprises two side walls oppositely arranged in a horizontal direction, and each of the support beams is provided with an auxiliary clamping structure for clamping the substrate carrier during transferring of the substrate carrier.

Exemplary substrate locking system, device, apparatus and method for chemical and/or electrolytic surface treatment of a substrate in a process fluid can be provided. For example, it is possible to provide a first element, a second element and a locking unit. The first element and the second element can be configured to hold the substrate between each other. The locking unit can be configured to lock the first element and the second element with each other. The locking unit can comprise a magnet control device and a magnet. The magnet can be arranged at or near the first element and/or the second element. The magnet control device can be configured to control a magnetic force between the first element and the second element.

Exemplary substrate locking system, device, apparatus and method for chemical and/or electrolytic surface treatment of a substrate in a process fluid can be provided. For example, it is possible to provide a first element, a second element and a locking unit. The first element and the second element can be configured to hold the substrate between each other. The locking unit can be configured to lock the first element and the second element with each other. The locking unit can comprise a magnet control device and a magnet. The magnet can be arranged at or near the first element and/or the second element. The magnet control device can be configured to control a magnetic force between the first element and the second element.

A method of electroplating metal into features of a partially fabricated electronic device on a substrate having high open area portions is provided. The method includes initiating a bulk electrofill phase with a pulse at a high level of current; reducing the current to a baseline current level; and optionally increasing the current in one or more steps until electroplating is complete.

An e-coat line includes a frame supporting a process track configured to extend along a process direction, a workpiece rack moveably supported on the frame, and a plurality of electrodes supported on an electrode rack. The rack includes support members configured to hold a plurality of hollow workpieces in a predetermined arrangement, and the workpiece rack is moveable relative to the frame between a raised position and a lowered position. The plurality of electrodes are supported on the electrode rack in a predetermined arrangement complementary to the predetermined arrangement of the plurality of hollow workpieces on the support members. The electrode rack is moveable relative to the workpiece rack in a direction crossing the process direction between a first position, in which the plurality of electrodes are extended along and overlapping with the support members to fit within the plurality of hollow workpieces, and a second position, in which the plurality of electrodes are retracted away from the support members to be removed from the plurality of hollow workpieces.

An e-coat line includes a frame supporting a process track configured to extend along a process direction, a workpiece rack moveably supported on the frame, and a plurality of electrodes supported on an electrode rack. The rack includes support members configured to hold a plurality of hollow workpieces in a predetermined arrangement, and the workpiece rack is moveable relative to the frame between a raised position and a lowered position. The plurality of electrodes are supported on the electrode rack in a predetermined arrangement complementary to the predetermined arrangement of the plurality of hollow workpieces on the support members. The electrode rack is moveable relative to the workpiece rack in a direction crossing the process direction between a first position, in which the plurality of electrodes are extended along and overlapping with the support members to fit within the plurality of hollow workpieces, and a second position, in which the plurality of electrodes are retracted away from the support members to be removed from the plurality of hollow workpieces.

In one example, an electroplating apparatus is provided for electroplating a wafer. The electroplating apparatus comprises a wafer holder for holding a wafer during an electroplating operation and a plating cell configured to contain an electrolyte during the electroplating operation. An anode chamber is disposed within the plating cell, and a charge plate is disposed within the anode chamber. An anode is positioned above the charge plate within the anode chamber. In some examples, the anode chamber is a membrane-less anode chamber.

In one example, an electroplating apparatus is provided for electroplating a wafer. The electroplating apparatus comprises a wafer holder for holding a wafer during an electroplating operation and a plating cell configured to contain an electrolyte during the electroplating operation. An anode chamber is disposed within the plating cell, and a charge plate is disposed within the anode chamber. An anode is positioned above the charge plate within the anode chamber. In some examples, the anode chamber is a membrane-less anode chamber.

In one example, an electroplating system comprises a first bath reservoir, a second bath reservoir, a clamp, a first anode in the first bath reservoir, a second anode in the second bath reservoir, and a direct current power supply. The first bath reservoir contains a first electrolyte solution that includes an alkaline copper-complexed solution. The second bath reservoir contains a second electrolyte solution that includes an acidic copper plating solution. The direct current power supply generates a first direct current between the clamp and the first anode to electroplate a first copper layer on the cobalt layer of the wafer submerged in the first electrolyte solution. The direct current power supply then generates a second direct current between the clamp and the second anode to electroplate a second copper layer on the first copper layer of the wafer submerged in the second electrolyte solution.

In one example, an electroplating system comprises a first bath reservoir, a second bath reservoir, a clamp, a first anode in the first bath reservoir, a second anode in the second bath reservoir, and a direct current power supply. The first bath reservoir contains a first electrolyte solution that includes an alkaline copper-complexed solution. The second bath reservoir contains a second electrolyte solution that includes an acidic copper plating solution. The direct current power supply generates a first direct current between the clamp and the first anode to electroplate a first copper layer on the cobalt layer of the wafer submerged in the first electrolyte solution. The direct current power supply then generates a second direct current between the clamp and the second anode to electroplate a second copper layer on the first copper layer of the wafer submerged in the second electrolyte solution.