The invention relates to a substrate holding and locking system for chemical and/or electrolytic surface treatment of a substrate in a process fluid and a corresponding method. The system comprises a first element, a second element, a reduced pressure holding unit and a magnetic locking unit. The first element and the second element are configured to hold the substrate between each other. The reduced pressure holding unit comprises a pump to reduce an interior pressure inside the substrate holding and locking system below atmospheric pressure. The magnetic locking unit is configured to lock the first element and the second element with each other. The magnetic locking unit comprises a magnet control and at least a magnet. The magnet is arranged at one of the first element and the second element. The magnet control is configured to control a magnetic force between the first element and the second element.

The invention relates to a substrate holding and locking system for chemical and/or electrolytic surface treatment of a substrate in a process fluid and a corresponding method. The system comprises a first element, a second element, a reduced pressure holding unit and a magnetic locking unit. The first element and the second element are configured to hold the substrate between each other. The reduced pressure holding unit comprises a pump to reduce an interior pressure inside the substrate holding and locking system below atmospheric pressure. The magnetic locking unit is configured to lock the first element and the second element with each other. The magnetic locking unit comprises a magnet control and at least a magnet. The magnet is arranged at one of the first element and the second element. The magnet control is configured to control a magnetic force between the first element and the second element.

A plating method includes holding a substrate, supplying a plating liquid L1, supplying a conductive liquid L2 and applying a voltage. In the holding of the substrate, the substrate is held. In the supplying of the plating liquid L1, the plating liquid L1 is supplied onto the held substrate. In the supplying of the conductive liquid L2, the conductive liquid L2, which is different from the plating liquid L1 supplied on the substrate, is supplied onto the plating liquid L1. In the applying of the voltage, the voltage is applied between the substrate and the conductive liquid L2.

A plating method includes holding a substrate, supplying a plating liquid L1, supplying a conductive liquid L2 and applying a voltage. In the holding of the substrate, the substrate is held. In the supplying of the plating liquid L1, the plating liquid L1 is supplied onto the held substrate. In the supplying of the conductive liquid L2, the conductive liquid L2, which is different from the plating liquid L1 supplied on the substrate, is supplied onto the plating liquid L1. In the applying of the voltage, the voltage is applied between the substrate and the conductive liquid L2.

The present disclosure relates to a distribution system for a process fluid for chemical and/or electrolytic surface treatment of a substrate, a device for chemical and/or electrolytic surface treatment of a substrate in a process fluid, a use of the distribution system, and a method for manufacturing the distribution system. The distribution system comprises: a first distribution body, a substitute body, and a framework. The first distribution body is configured to direct a flow of the process fluid and/or an electrical current to the substrate. The first distribution body and the substitute body are arranged to insert the substrate between them. The framework is configured to mount the first distribution body and the substitute body relative to each other. The framework is further configured to form, together with the first distribution body and the substitute body, a casing surrounding the substrate.

The present disclosure relates to a distribution system for a process fluid for chemical and/or electrolytic surface treatment of a substrate, a device for chemical and/or electrolytic surface treatment of a substrate in a process fluid, a use of the distribution system, and a method for manufacturing the distribution system. The distribution system comprises: a first distribution body, a substitute body, and a framework. The first distribution body is configured to direct a flow of the process fluid and/or an electrical current to the substrate. The first distribution body and the substitute body are arranged to insert the substrate between them. The framework is configured to mount the first distribution body and the substitute body relative to each other. The framework is further configured to form, together with the first distribution body and the substitute body, a casing surrounding the substrate.

An electroplating cup assembly comprises a cup bottom, a lip seal, and an electrical contact structure. The cup bottom at least partially defines an opening configured to allow exposure of a wafer positioned in the cup assembly to an electroplating solution. The lip seal is on the cup bottom and comprises a sealing structure extending upwardly along an inner edge of the lip seal to a peak that is configured to be in contact with a seed layer of a wafer and adjacent to a sacrificial layer of the wafer. The electrical contact structure is over a portion of the seal. The electrical contact structure configured to be coupled to the seed layer of the wafer.

An electroplating cup assembly comprises a cup bottom, a lip seal, and an electrical contact structure. The cup bottom at least partially defines an opening configured to allow exposure of a wafer positioned in the cup assembly to an electroplating solution. The lip seal is on the cup bottom and comprises a sealing structure extending upwardly along an inner edge of the lip seal to a peak that is configured to be in contact with a seed layer of a wafer and adjacent to a sacrificial layer of the wafer. The electrical contact structure is over a portion of the seal. The electrical contact structure configured to be coupled to the seed layer of the wafer.

An etcher comprises a bath, a plurality of blades, and a tunnel. The bath includes a first electrode at a first end and a second electrode at a second end. The plurality of blades is configured to fit in the bath. At least one blade of the plurality of blades holds a wafer. At least one tunnel is configured to fit between adjacent blades of the plurality of blades in the bath.

An etcher comprises a bath, a plurality of blades, and a tunnel. The bath includes a first electrode at a first end and a second electrode at a second end. The plurality of blades is configured to fit in the bath. At least one blade of the plurality of blades holds a wafer. At least one tunnel is configured to fit between adjacent blades of the plurality of blades in the bath.