A cathode is provided for electrolysis of water wherein the cathode material comprises a multi-principal element, transition metal dichalcogenide material that has four or more chemical elements and that is a single phase, solid solution. The pristine cathode material does not contain platinum as a principal (major) component. However, a cathode comprising a transition metal dichalcogenide having platinum (Pt) nanosized islands or precipitates disposed thereon is also provided.

A cathode is provided for electrolysis of water wherein the cathode material comprises a multi-principal element, transition metal dichalcogenide material that has four or more chemical elements and that is a single phase, solid solution. The pristine cathode material does not contain platinum as a principal (major) component. However, a cathode comprising a transition metal dichalcogenide having platinum (Pt) nanosized islands or precipitates disposed thereon is also provided.

Process of electroforming a metal structure, in particular a structure with a tip protruding from adjacent outer layers. The process comprises the following steps; a first layer is deposited on a substrate followed by one or more next layers partially overlapping the first layer to form an intermediate structure having a substrate surface facing the substrate; in a next step, the intermediate structure is removed from the substrate and one or more further layers are deposited on said substrate surface of the intermediate structure.

Process of electroforming a metal structure, in particular a structure with a tip protruding from adjacent outer layers. The process comprises the following steps; a first layer is deposited on a substrate followed by one or more next layers partially overlapping the first layer to form an intermediate structure having a substrate surface facing the substrate; in a next step, the intermediate structure is removed from the substrate and one or more further layers are deposited on said substrate surface of the intermediate structure.

The present invention relates to an electrode, which is an in vivo insertable electrode, including a substrate, an electrically conductive layer formed on the substrate, a platinum black layer formed on the electrically conductive layer, a self-assembled monolayer (SAM) formed on the platinum black layer, and a lubricant layer formed on the SAM, a method of manufacturing the electrode, and a medical device including the electrode. The in vivo insertable electrode according to the present invention provides excellent electrical properties such as low impedance. Further, it shows that friction with tissue occurring when the electrode is inserted is reduced, and trauma during insertion and an immune rejection response after insertion is suppressed. Further, in the long term, it is possible to detect signals with high sensitivity throughout the entire period by preventing bioadhesion of in vivo cells, such as immune cells, and other proteins.

The present invention relates to an electrode, which is an in vivo insertable electrode, including a substrate, an electrically conductive layer formed on the substrate, a platinum black layer formed on the electrically conductive layer, a self-assembled monolayer (SAM) formed on the platinum black layer, and a lubricant layer formed on the SAM, a method of manufacturing the electrode, and a medical device including the electrode. The in vivo insertable electrode according to the present invention provides excellent electrical properties such as low impedance. Further, it shows that friction with tissue occurring when the electrode is inserted is reduced, and trauma during insertion and an immune rejection response after insertion is suppressed. Further, in the long term, it is possible to detect signals with high sensitivity throughout the entire period by preventing bioadhesion of in vivo cells, such as immune cells, and other proteins.

Exemplary methods of electroplating may include providing a patterned substrate having at least one opening, where the opening includes one or more sidewalls and a bottom surface. The methods may also include plating a first portion of ruthenium-containing material on the bottom surface of the opening at a first deposition rate and a second portion of ruthenium-containing material on the sidewalls of the opening at a second deposition rate, where the first deposition rate is greater than the second deposition rate. The methods may be used to make integrated circuit devices that include void-free, electrically-conductive lines and columns of ruthenium-containing materials.

Exemplary methods of electroplating may include providing a patterned substrate having at least one opening, where the opening includes one or more sidewalls and a bottom surface. The methods may also include plating a first portion of ruthenium-containing material on the bottom surface of the opening at a first deposition rate and a second portion of ruthenium-containing material on the sidewalls of the opening at a second deposition rate, where the first deposition rate is greater than the second deposition rate. The methods may be used to make integrated circuit devices that include void-free, electrically-conductive lines and columns of ruthenium-containing materials.

Exemplary methods of electroplating may include providing a patterned substrate having at least one opening, where the opening includes one or more sidewalls and a bottom surface. The methods may also include plating a first portion of ruthenium-containing material on the bottom surface of the opening at a first deposition rate and a second portion of ruthenium-containing material on the sidewalls of the opening at a second deposition rate, where the first deposition rate is greater than the second deposition rate. The methods may be used to make integrated circuit devices that include void-free, electrically-conductive lines and columns of ruthenium-containing materials.

Exemplary methods of electroplating may include providing a patterned substrate having at least one opening, where the opening includes one or more sidewalls and a bottom surface. The methods may also include plating a first portion of ruthenium-containing material on the bottom surface of the opening at a first deposition rate and a second portion of ruthenium-containing material on the sidewalls of the opening at a second deposition rate, where the first deposition rate is greater than the second deposition rate. The methods may be used to make integrated circuit devices that include void-free, electrically-conductive lines and columns of ruthenium-containing materials.