Providing a copper alloy plate, in which center Mg concentration at a center part in a plate thickness direction 0.1 mass % or more and less than 0.3 mass %, center P concentration is 0.001 mass % or more and 0.2 mass % or less, and the balance is composed of Cu and inevitable impurities; in which surface Mg concentration at a surface is 70% or less of the center Mg concentration; in which a surface layer part defined by a prescribed thickness from the surface has a concentration gradient of Mg of 0.05 mass %/m or more and 5 mass %/m or less increasing from surface toward center part of the plate thickness direction; and in which restraint of color change of the surface and increase of electrical contact resistance, and adhesiveness of a plating film are excellent due to maximum Mg concentration in the surface layer part is 90% of the center Mg concentration.

A cathode is provided for electrolysis of water wherein the cathode material comprises a multi-principal element, transition metal dichalcogenide material that has four or more chemical elements and that is a single phase, solid solution. The pristine cathode material does not contain platinum as a principal (major) component. However, a cathode comprising a transition metal dichalcogenide having platinum (Pt) nanosized islands or precipitates disposed thereon is also provided.

A cathode is provided for electrolysis of water wherein the cathode material comprises a multi-principal element, transition metal dichalcogenide material that has four or more chemical elements and that is a single phase, solid solution. The pristine cathode material does not contain platinum as a principal (major) component. However, a cathode comprising a transition metal dichalcogenide having platinum (Pt) nanosized islands or precipitates disposed thereon is also provided.

A method of manufacturing a catheter tip by electroplating a conductive material over an insert comprising a negative to a domelike shape thereby forming a shape of the catheter tip comprising a dome with the domelike shape, selectively positioning a plurality of irrigation holes between outer and inner surfaces of the catheter tip, removing the insert thereby leaving the catheter tip and the plurality of irrigation holes, and electropolishing the catheter tip. In other examples, the insert is not removed and instead the step of electroplating causes the insert to be encapsulated with the conductive material thereby forming the catheter tip.

A method of manufacturing a catheter tip by electroplating a conductive material over an insert comprising a negative to a domelike shape thereby forming a shape of the catheter tip comprising a dome with the domelike shape, selectively positioning a plurality of irrigation holes between outer and inner surfaces of the catheter tip, removing the insert thereby leaving the catheter tip and the plurality of irrigation holes, and electropolishing the catheter tip. In other examples, the insert is not removed and instead the step of electroplating causes the insert to be encapsulated with the conductive material thereby forming the catheter tip.

An interconnect structure of a semiconductor device includes a conductive via and a barrier layer lining an interface between a dielectric layer and the conductive via. The barrier layer is selectively deposited along sidewalls of a recess formed in a dielectric layer. The conductive via is formed by selectively electroplating electrically conductive material such as rhodium, iridium, or platinum in an opening of the recess, where the conductive via is grown upwards from an exposed metal surface at a bottom of the recess. The conductive via includes an electrically conductive material having a low electron mean free path, low electrical resistivity, and high melting point. The interconnect structure of the semiconductor device has reduced via resistance and improved resistance to electromigration and/or stress migration.

An interconnect structure of a semiconductor device includes a conductive via and a barrier layer lining an interface between a dielectric layer and the conductive via. The barrier layer is selectively deposited along sidewalls of a recess formed in a dielectric layer. The conductive via is formed by selectively electroplating electrically conductive material such as rhodium, iridium, or platinum in an opening of the recess, where the conductive via is grown upwards from an exposed metal surface at a bottom of the recess. The conductive via includes an electrically conductive material having a low electron mean free path, low electrical resistivity, and high melting point. The interconnect structure of the semiconductor device has reduced via resistance and improved resistance to electromigration and/or stress migration.

A titanium sub-oxide/ruthenium oxide composite electrode and a preparation method and application thereof. Titanium-based titanium sub-oxide nanotubes is taken as a bottom layer, and titanium sub-oxide doped ruthenium oxide is taken as a surface composite active layer. A titanium substrate is anodized in a fluorine-containing ionic electrolyte, taken out, subjected to heating and roasting, cooled and then subjected to cathodic electrochemical reduction in polarizing liquid, so that a titanium-based titanium sub-oxide nanotube electrode is obtained; and then the titanium-based titanium sub-oxide nanotube electrode is taken as a cathode to be electrodeposited in a ruthenium trichloride electrolyte doped with titanium sub-oxide powder, taken out and then subjected to heating and roasting, so that the titanium sub-oxide/ruthenium oxide composite electrode is obtained.

A titanium sub-oxide/ruthenium oxide composite electrode and a preparation method and application thereof. Titanium-based titanium sub-oxide nanotubes is taken as a bottom layer, and titanium sub-oxide doped ruthenium oxide is taken as a surface composite active layer. A titanium substrate is anodized in a fluorine-containing ionic electrolyte, taken out, subjected to heating and roasting, cooled and then subjected to cathodic electrochemical reduction in polarizing liquid, so that a titanium-based titanium sub-oxide nanotube electrode is obtained; and then the titanium-based titanium sub-oxide nanotube electrode is taken as a cathode to be electrodeposited in a ruthenium trichloride electrolyte doped with titanium sub-oxide powder, taken out and then subjected to heating and roasting, so that the titanium sub-oxide/ruthenium oxide composite electrode is obtained.

The present invention relates to 2D-material based composite materials such as aerogels and particularly, although not exclusively, to deposition of nanoparticles on 2D-material based aerogels. Also described are methods for manufacturing such materials.