Providing a copper alloy plate, in which center Mg concentration at a center part in a plate thickness direction 0.1 mass % or more and less than 0.3 mass %, center P concentration is 0.001 mass % or more and 0.2 mass % or less, and the balance is composed of Cu and inevitable impurities; in which surface Mg concentration at a surface is 70% or less of the center Mg concentration; in which a surface layer part defined by a prescribed thickness from the surface has a concentration gradient of Mg of 0.05 mass %/m or more and 5 mass %/m or less increasing from surface toward center part of the plate thickness direction; and in which restraint of color change of the surface and increase of electrical contact resistance, and adhesiveness of a plating film are excellent due to maximum Mg concentration in the surface layer part is 90% of the center Mg concentration.

This tin or tin alloy electroplating solution according to one aspect contains a soluble salt (A) including at least a stannous salt, one or more compounds (B) selected from the group consisting of an organic acid, an inorganic acid, and a salt thereof, a surfactant (C) that is a polyoxyethylene polycyclic phenyl ether sulfuric acid ester salt represented by the following General Formula (1), and a leveling agent (D).

##STR00001##

In General Formula (1), m is an integer of 1 to 3, n is an integer of 10 to 30, and X is a cation.

The present invention provides a method of tin-plating a copper alloy for electric or electronic parts and automobile parts which has excellent insertion force, heat-resistant peeling, and solderability, and a tin-plating material of a copper alloy manufactured therefrom.

The present invention provides a method of tin-plating a copper alloy for electric or electronic parts and automobile parts which has excellent insertion force, heat-resistant peeling, and solderability, and a tin-plating material of a copper alloy manufactured therefrom.

The present invention relates to the use of an aqueous composition comprising tin ions optionally further alloy metal ions selected from silver, copper, indium, and bismuth ions and at least one additive comprising a linear or branched polyimidazolium compound comprising the structural unit of formula (L1) for depositing tin or tin alloy containing layers and a process for depositing tin alloy layer onto a substrate. ##STR00001##

The present invention relates to the use of an aqueous composition comprising tin ions optionally further alloy metal ions selected from silver, copper, indium, and bismuth ions and at least one additive comprising a linear or branched polyimidazolium compound comprising the structural unit of formula (L1) for depositing tin or tin alloy containing layers and a process for depositing tin alloy layer onto a substrate. ##STR00001##

Undesired deposition of metals on a lipseal (lipseal plate-out) during electrodeposition of metals on semiconductor substrates is minimized or eliminated by minimizing or eliminating ionic current directed at a lipseal. For example, electrodeposition can be conducted such as to avoid contact of a lipseal with a cathodically biased conductive material on the semiconductor substrate during the course of electroplating. This can be accomplished by shielding a small selected zone proximate the lipseal to suppress electrode-position of metal proximate the lipseal, and to avoid contact of metal with a lipseal. In some embodiments shielding is accomplished by sequentially using lipseals of different inner diameters during electroplating of metals into through-resist features, where a lipseal having a smaller diameter is used during a first electroplating step and serves as a shield blocking electrodeposition in a selected zone. In a second electroplating step, a lipseal of a larger inner diameter is used.

Undesired deposition of metals on a lipseal (lipseal plate-out) during electrodeposition of metals on semiconductor substrates is minimized or eliminated by minimizing or eliminating ionic current directed at a lipseal. For example, electrodeposition can be conducted such as to avoid contact of a lipseal with a cathodically biased conductive material on the semiconductor substrate during the course of electroplating. This can be accomplished by shielding a small selected zone proximate the lipseal to suppress electrode-position of metal proximate the lipseal, and to avoid contact of metal with a lipseal. In some embodiments shielding is accomplished by sequentially using lipseals of different inner diameters during electroplating of metals into through-resist features, where a lipseal having a smaller diameter is used during a first electroplating step and serves as a shield blocking electrodeposition in a selected zone. In a second electroplating step, a lipseal of a larger inner diameter is used.

External electrical connectors and methods of forming such external electrical connectors are discussed. A method includes forming an external electrical connector structure on a substrate. The forming the external electrical connector structure includes plating a pillar on the substrate at a first agitation level affected at the substrate in a first solution. The method further includes plating solder on the external electrical connector structure at a second agitation level affected at the substrate in a second solution. The second agitation level affected at the substrate is greater than the first agitation level affected at the substrate. The plating the solder further forms a shell on a sidewall of the external electrical connector structure.

The present invention concerns a metal or metal alloy deposition composition, particularly a copper or copper alloy deposition composition, for electrolytic deposition of a metal or metal alloy layer, particularly for electrolytic deposition of a copper or copper alloy layer, comprising at least one type of metal ions to be deposited, preferably copper ions, and at least one imidazole based plating compound. The present invention further concerns a method for preparation of the plating compound, the plating compound itself and its use in a metal or metal alloy deposition composition. The inventive metal or metal alloy deposition composition can be preferably used for filling recessed structures, in particular those having higher diameter to depth aspect ratios.