In a method of manufacturing a semiconductor device first conductive layers are formed over a substrate. A first photoresist layer is formed over the first conductive layers. The first conductive layers are etched by using the first photoresist layer as an etching mask, to form an island pattern of the first conductive layers separated from a bus bar pattern of the first conductive layers by a ring shape groove. A connection pattern is formed to connect the island pattern and the bus bar pattern. A second photoresist layer is formed over the first conductive layers and the connection pattern. The second photoresist layer includes an opening over the island pattern. Second conductive layers are formed on the island pattern in the opening. The second photoresist layer is removed, and the connection pattern is removed, thereby forming a bump structure.

An electrochemical additive manufacturing method includes positioning a build plate into an electrolyte solution. The conductive layer comprises at least one conductive-layer segment forming a pattern corresponding with a component. The method further comprises connecting the at least one conductive-layer segment and one or more deposition anodes to a power source. The one or more deposition anodes correspond with at least a portion of the pattern formed by the at least one conductive-layer segment. The method additionally comprises transmitting electrical energy from the power source through the one or more deposition anodes of the plurality of deposition anodes corresponding with the at least the portion of the pattern formed by the at least one conductive-layer segment, through the electrolyte solution, and to the at least one conductive-layer segment, such that material is deposited onto the at least one conductive-layer segment and forms at least a portion of the component.

A floating metallized element assembly and method of manufacturing thereof are disclosed. The floating metallized element assembly includes a work piece of a plateable resin and a non-plateable resin including a front side and a back side. The work piece includes at least one plated decorative region on the plateable resin at the front side. The work piece also includes at least one network of the plateable resin at the back side. The work piece additionally includes a plurality of discrete current paths of the plateable resin extending from the at least one network to the at least one plated decorative region. The work piece also includes at least one non-plated decorative region of the non-plateable resin adjacent the at least one decorative region. Metal surfaces are adhered to and disposed on the at least one plated decorative region.

In a method of manufacturing a semiconductor device first conductive layers are formed over a substrate. A first photoresist layer is formed over the first conductive layers. The first conductive layers are etched by using the first photoresist layer as an etching mask, to form an island pattern of the first conductive layers separated from a bus bar pattern of the first conductive layers by a ring shape groove. A connection pattern is formed to connect the island pattern and the bus bar pattern. A second photoresist layer is formed over the first conductive layers and the connection pattern. The second photoresist layer includes an opening over the island pattern. Second conductive layers are formed on the island pattern in the opening. The second photoresist layer is removed, and the connection pattern is removed, thereby forming a bump structure.

Articles including a multi-layer electrical contact and methods for applying the contact to a substrate are described herein. The article may include a substrate on which the multi-layer electrical contact is formed. In some embodiments, the electrical contact includes multiple metallic layers.

In a method of manufacturing a semiconductor device first conductive layers are formed over a substrate. A first photoresist layer is formed over the first conductive layers. The first conductive layers are etched by using the first photoresist layer as an etching mask, to form an island pattern of the first conductive layers separated from a bus bar pattern of the first conductive layers by a ring shape groove. A connection pattern is formed to connect the island pattern and the bus bar pattern. A second photoresist layer is formed over the first conductive layers and the connection pattern. The second photoresist layer includes an opening over the island pattern. Second conductive layers are formed on the island pattern in the opening. The second photoresist layer is removed, and the connection pattern is removed, thereby forming a bump structure.

An electrochemical additive manufacturing method includes positioning a build plate into an electrolyte solution. The conductive layer comprises at least one conductive-layer segment forming a pattern corresponding with a component. The method further comprises connecting the at least one conductive-layer segment and one or more deposition anodes to a power source. The one or more deposition anodes correspond with at least a portion of the pattern formed by the at least one conductive-layer segment. The method additionally comprises transmitting electrical energy from the power source through the one or more deposition anodes of the plurality of deposition anodes corresponding with the at least the portion of the pattern formed by the at least one conductive-layer segment, through the electrolyte solution, and to the at least one conductive-layer segment, such that material is deposited onto the at least one conductive-layer segment and forms at least a portion of the component.

In a method of manufacturing a semiconductor device first conductive layers are formed over a substrate. A first photoresist layer is formed over the first conductive layers. The first conductive layers are etched by using the first photoresist layer as an etching mask, to form an island pattern of the first conductive layers separated from a bus bar pattern of the first conductive layers by a ring shape groove. A connection pattern is formed to connect the island pattern and the bus bar pattern. A second photoresist layer is formed over the first conductive layers and the connection pattern. The second photoresist layer includes an opening over the island pattern. Second conductive layers are formed on the island pattern in the opening. The second photoresist layer is removed, and the connection pattern is removed, thereby forming a bump structure.

An electrochemical additive manufacturing method includes positioning a cathode portion of a build plate and a deposition anode array into an electrolyte solution. The method additionally includes transmitting electrical energy from the power source through one or more deposition anodes, through the electrolyte solution, and to the cathode portion such that material is deposited onto the cathode portion. The build plate includes a thermal feature, the deposited material is thermally coupled with the thermal feature, and the deposited material forms a heat wicking feature.

In a method of manufacturing a semiconductor device first conductive layers are formed over a substrate. A first photoresist layer is formed over the first conductive layers. The first conductive layers are etched by using the first photoresist layer as an etching mask, to form an island pattern of the first conductive layers separated from a bus bar pattern of the first conductive layers by a ring shape groove. A connection pattern is formed to connect the island pattern and the bus bar pattern. A second photoresist layer is formed over the first conductive layers and the connection pattern. The second photoresist layer includes an opening over the island pattern. Second conductive layers are formed on the island pattern in the opening. The second photoresist layer is removed, and the connection pattern is removed, thereby forming a bump structure.