C30B13/04

Thin film crystallization process
11810785 · 2023-11-07 · ·

A method of performing regional heating of a substrate by electromagnetic induction heating. The method may include applying a semiconductor film to the substrate and controllably energizing a coil positioned near the substrate. The energized coil(s) thereby generates a magnetic flux, which induces a current in the substrate and/or the semiconductor film, thereby heating the substrate and/or semiconductor film. The method may also include relative motion between the coil and the substrate to provide translation heating of the semiconductor film. Additionally, a crystal seeding mechanism may be employed to further control the crystallization process.

Method, use and apparatus for producing a single-crystalline work piece
10875124 · 2020-12-29 · ·

A method for producing or repairing a three-dimensional work piece, the method comprising the following steps: providing at least one substrate (15); depositing a first layer of a raw material powder onto the substrate (15); and irradiating selected areas of the deposited raw material powder layer with an electromagnetic or particle radiation beam (22) in a site selective manner in accordance with an irradiation pattern which corresponds to a geometry of at least part of a layer of the three-dimensional work piece to be produced, wherein the irradiation is controlled so as to produce a metallurgical bond between the substrate (15) and the raw material powder layer deposited thereon. Moreover, a use and apparatus are likewise disclosed.

THIN FILM CRYSTALLIZATION PROCESS
20200328081 · 2020-10-15 · ·

A method of performing regional heating of a substrate by electromagnetic induction heating. The method may include applying a semiconductor film to the substrate and controllably energizing a coil positioned near the substrate. The energized coil(s) thereby generates a magnetic flux, which induces a current in the substrate and/or the semiconductor film, thereby heating the substrate and/or semiconductor film. The method may also include relative motion between the coil and the substrate to provide translation heating of the semiconductor film. Additionally, a crystal seeding mechanism may be employed to further control the crystallization process.