In SiC single crystal production by the solution process, an alloy of silicon (Si) and a metallic element M that increases the solubility of carbon (C) is pre-impregnated into a SiC sintered body having a relative density of 50 to 90%, following which Si and M are placed in a SiC crucible made of the SiC sintered body and the Si and M within the SiC crucible are melted, forming a Si—C solution. With heating, SiC from the SiC sintered body dissolves into the Si—C solution, efficiently supplying Si and C to the Si—C solution. As a result, Si and C are supplied uniformly and in the proper amount from all areas of contact between the SiC crucible and the Si—C solution, enabling a high-quality SiC single crystal to be stably produced over a long time at a rapid growth rate.

There is provided a Group-III element nitride semiconductor substrate including a first surface and a second surface, in which even when devices to be produced on the first surface are increased in size, variations in device characteristics between the devices in the same substrate are suppressed. A Group-III element nitride semiconductor substrate includes a first surface and a second surface. The Group-III element nitride semiconductor substrate satisfies at least one of the following items (1) to (3): (1) The main surface has a maximum height Wz of a surface waviness profile of 150 nm or less; (2) The main surface has a root mean square height Wq of the surface waviness profile of 25 nm or less; (3) The main surface has an average length WSm of surface waviness profile elements of 0.5 mm or more.

The invention refers to a composite wavelength converter (1) for an LED (100), comprising a substrate (10) and an epitaxial film (20) formed by liquid phase epitaxy on the top and bottom of the substrate (10). Furthermore, the invention refers to a method of preparation of a composite wavelength converter (1) for an LED (100). Furthermore, the invention refers to a white LED light source comprising an LED (100) and an inventive composite wavelength converter (1) mounted on a light emitting surface of the LED (100).

The invention refers to a composite wavelength converter (1) for an LED (100), comprising a substrate (10) and an epitaxial film (20) formed by liquid phase epitaxy on the top and bottom of the substrate (10). Furthermore, the invention refers to a method of preparation of a composite wavelength converter (1) for an LED (100). Furthermore, the invention refers to a white LED light source comprising an LED (100) and an inventive composite wavelength converter (1) mounted on a light emitting surface of the LED (100).

A SiC single crystal is produced by impregnating a molten alloy of silicon and a metallic element M that increases carbon solubility into a SiC sintered body to form a SiC crucible, placing silicon and M in the crucible and heating the crucible to melt the silicon and M and form a Si—C solution, dissolving silicon and carbon in the solution from surfaces of the crucible in contact with the solution, contacting a SiC seed crystal with the top of the solution to grow a first SiC single crystal on the SiC seed crystal by a solution process, and bulk growing a second SiC single crystal on a face of the solution-grown first SiC single crystal by a sublimation or gas process. This method enables a low-dislocation, high-quality SiC single crystal to be produced by a vapor phase process.

A semiconductor device and a method of manufacturing a semiconductor device according to one or more embodiments are disclosed. An interface layer is formed by implanting ionized impurities into a first layer comprising single-crystalline silicon carbide (SiC). Surfaces of the interface layer and a second layer comprising polycrystalline silicon carbide (SiC) are activated. The activated surfaces of the interface layer and the second layer are contacted and bonded. A covering layer is formed to cover a top surface and sides of the first layer, sides of the interface layer, and sides of the second layer.

A 4H-SiC single crystal having good morphology while preventing heterogeneous polymorphs from being mixed in regardless of the presence or absence of doping in growing a 4H-SiC single crystal by the TSSG method is obtained. When the off-angle on the grown crystal in a method for producing a SiC single crystal by a TSSG method is set to 60 to 68°, heterogeneous polymorphs are less likely to be mixed in during the growth of 4H-SiC single crystal, and if, during that period, a meltback method is used to smooth the surface of the seed crystal and then grow the crystal, it is possible to obtain a grown crystal having good morphology.

The method of the disclosure for producing a crystal is a method for producing a crystal of silicon carbide and includes a preparation step, a contact step, a first growth step, a heating step, a cooling step, and a second growth step. The preparation step includes preparing a seed crystal, a crucible, and a solution. The contact step includes bringing the seed crystal into contact with the solution. The first growth step includes heating the solution to a temperature in a first temperature range and pulling up the seed crystal with the temperature of the solution kept in the first temperature range to grow a crystal from the lower surface of the seed crystal. The heating step includes heating the solution. The cooling step includes cooling the solution. The second growth step includes further growing the crystal with the temperature of the solution kept in the first temperature range.

A bismuth-substituted rare earth iron garnet single crystal suitable for Faraday rotators and optical isolators with reduced insertion loss due to suppressed valence fluctuation of Fe ions is provided. The bismuth-substituted rare earth iron garnet single crystal of the present invention is characterized by the composition formula (Gd.sub.aLn.sub.bBi.sub.cMg.sub.3−(a+b+c))(Fe.sub.dGa.sub.eTi.sub.fPt.sub.5−(d+e+f))O.sub.12. In the composition formula above, 0.02≤f≤0.05, 0.02≤{3−(a+b+c)}≤0.08, and −0.01≤{3−(a+b+c)}−{f+5−(d+e+f)}≤0.01. Ln is a rare earth element and may be selected from Eu, Dy, Gd, Ho, Tm, Yb, Lu, and Y.

A bismuth-substituted rare earth iron garnet single crystal suitable for Faraday rotators and optical isolators with reduced insertion loss due to suppressed valence fluctuation of Fe ions is provided. The bismuth-substituted rare earth iron garnet single crystal of the present invention is characterized by the composition formula (Gd.sub.aLn.sub.bBi.sub.cMg.sub.3−(a+b+c))(Fe.sub.dGa.sub.eTi.sub.fPt.sub.5−(d+e+f))O.sub.12. In the composition formula above, 0.02≤f≤0.05, 0.02≤{3−(a+b+c)}≤0.08, and −0.01≤{3−(a+b+c)}−{f+5−(d+e+f)}≤0.01. Ln is a rare earth element and may be selected from Eu, Dy, Gd, Ho, Tm, Yb, Lu, and Y.