A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber.

M-phthalocyanine nanowires according to the present invention can have a variety of uses as the M-phthalocyanine nanowires can control the crystalline structure thereof by controlling the flow speed of a carrier gas to a suitable range, and can exist in hydrophilic solvent without agglutinating due to superb dispersibility in water.

Provided is a manufacturing method of indium oxide nanorods, including the following steps: providing a temperature furnace divided into a first zone and a second zone; putting an indium metal source in the first zone and putting a substrate in the second zone; modulating a temperature of the first zone to a first temperature and modulating a temperature of the second zone to a second temperature, wherein the first temperature is higher than the second temperature; and inputting argon and oxygen into the temperature furnace when the temperature of the first zone reaches the first temperature and the temperature of the second zone reaches the second temperature, wherein a ratio of argon and oxygen is in a range of 30:1 to 70:1 such that a plurality of indium oxide nanorods are formed on the substrate. An indium oxide nanorod is also provided.

A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber.

A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber.

A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber

A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second input fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires.

A gas phase nanowire growth apparatus including a reaction chamber (200), a first input and a second input (202 B, 202 A). The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires

A gas phase nanowire growth apparatus including a reaction chamber (200), a first input and a second input (202 B, 202 A). The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires.

M-phthalocyanine nanowires according to the present invention can have a variety of uses as the M-phthalocyanine nanowires can control the crystalline structure thereof by controlling the flow speed of a carrier gas to a suitable range, and can exist in hydrophilic solvent without agglutinating due to superb dispersibility in waterphase.