A method and apparatus for forming a super-lattice structure on a substrate is described herein. The super-lattice structure includes a plurality of silicon-germanium layers and a plurality of silicon layers disposed in a stacked pattern. The methods described herein produce a super-lattice structure with transition width of less than about 1.4 nm between each of the silicon-germanium layers and an adjacent silicon layer. The methods described herein include flowing one or a combination of a silicon containing gas, a germanium containing gas, and a halogenated species.

A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber.

A method for manufacturing a group III nitride substrate is described. The method involves forming group III nitride films having a group III element face on a surface thereof, on both surfaces of a substrate, so as to produce a group III nitride film carrier. The group III nitride film carrier is subjected to ion implantation and adhered to a base substrate containing polycrystals containing a group III nitride as a major component. The group III nitride film carrier is spaced from the base substrate to transfer the ion-implanted region to the base substrate, so as to form a group III nitride film having an N face on a surface thereof on the base substrate. A group III nitride film is formed on the group III nitride by a THVPE method, so as to produce a thick film of a group III nitride film.

Exemplary integrated cluster tools may include a factory interface including a first transfer robot. The tools may include a wet clean system coupled with the factory interface at a first side of the wet clean system. The tools may include a load lock chamber coupled with the wet clean system at a second side of the wet clean system opposite the first side of the wet clean system. The tools may include a first transfer chamber coupled with the load lock chamber. The first transfer chamber may include a second transfer robot. The tools may include a dry etch chamber coupled with the first transfer chamber. The tools may include a second transfer chamber coupled with the first transfer chamber. The second transfer chamber may include a third transfer robot. The tools may include a process chamber coupled with the second transfer chamber.

Exemplary integrated cluster tools may include a factory interface including a first transfer robot. The tools may include a wet clean system coupled with the factory interface at a first side of the wet clean system. The tools may include a load lock chamber coupled with the wet clean system at a second side of the wet clean system opposite the first side of the wet clean system. The tools may include a first transfer chamber coupled with the load lock chamber. The first transfer chamber may include a second transfer robot. The tools may include a dry etch chamber coupled with the first transfer chamber. The tools may include a second transfer chamber coupled with the first transfer chamber. The second transfer chamber may include a third transfer robot. The tools may include a process chamber coupled with the second transfer chamber.

Disclosed is a method for synthesizing two-dimensional (2D) silicon carbide and other materials. The method includes the use of hexagonal SiC precursor in a wet exfoliation technique. The method may also include synthesizing two-dimensional (2D) silicon carbide by a chemical vapor deposition method, or a combination of a liquid exfoliation technique and a chemical vapor deposition method.

Flexible implant for electrically recording or stimulating a nerve structure, said flexible implant comprising: a first layer of electrically insulating diamond; an electrode of electrically conductive doped diamond, in contact with the first layer of electrically insulating diamond; an electrically conductive layer in contact with the electrode and the first layer, so as to define a conductive track for the electrode; and a second layer of electrically insulating diamond, at least in contact with the electrically conductive layer and a remaining portion of the first layer, all of the above arranged such that: electrically insulating diamond/electrically conductive doped diamond sealing is provided at the electrode (3) by resumption of epitaxial growth; and the electrically conductive layer is encapsulated by the electrode (3), the first layer and the second layer, at the electrode and over the entirety of the remaining surface thereof except over an area defining an electrical contact. The implant has two faces, namely: a front face comprising one of the two layers of electrically insulating diamond, open locally, providing access to the electrode and the area defining an electrical contact; and a rear face comprising the other of the two layers of electrically insulating diamond.

Flexible implant for electrically recording or stimulating a nerve structure, said flexible implant comprising: a first layer of electrically insulating diamond; an electrode of electrically conductive doped diamond, in contact with the first layer of electrically insulating diamond; an electrically conductive layer in contact with the electrode and the first layer, so as to define a conductive track for the electrode; and a second layer of electrically insulating diamond, at least in contact with the electrically conductive layer and a remaining portion of the first layer, all of the above arranged such that: electrically insulating diamond/electrically conductive doped diamond sealing is provided at the electrode (3) by resumption of epitaxial growth; and the electrically conductive layer is encapsulated by the electrode (3), the first layer and the second layer, at the electrode and over the entirety of the remaining surface thereof except over an area defining an electrical contact. The implant has two faces, namely: a front face comprising one of the two layers of electrically insulating diamond, open locally, providing access to the electrode and the area defining an electrical contact; and a rear face comprising the other of the two layers of electrically insulating diamond.

A wafer carrier includes a pocket sized and shaped to accommodate a wafer, the pocket having a base and a substantially circular perimeter, and a removable orientation marker, the removable orientation marker comprising an outer surface and an inner surface, the outer surface having an arcuate form sized and shaped to mate with the substantially circular perimeter of the pocket, and the inner surface comprising a flat face, wherein the removable orientation marker further comprises a notch at a first end of the flat face.

A method for producing a nitride semiconductor photoelectrode includes: a first step of forming an n-type gallium nitride layer on an electrically insulative or conductive substrate; a second step of forming an indium gallium nitride layer on the n-type gallium nitride layer; a third step of forming a p-type nickel oxide layer on the indium gallium nitride layer; and a fourth step of subjecting a nitride semiconductor in which the p-type nickel oxide layer has been formed to heat treatment.