[Object]

An object of the present invention is to provide a method for manufacturing an oxide single crystal substrate having less dispersion in characteristics within the substrate surface.

[Means to solve the Problems]

In the manufacture method of the present invention, a powder containing a Li compound is dispersed in a medium to form a slurry, and heat is applied while the slurry is in contact with the surface of the oxide single crystal substrate, so as to diffuse Li into the substrate from the surface thereof to effect a modification of the substrate; or after the slurry is brought into contact with the surface of the oxide single crystal substrate, the oxide single crystal substrate is buried in a powder containing the Li compound, and heat is applied to effect the diffusion of Li in the substrate from the surface thereof whereby a modification of the substrate occurs.

[Object]

An object of the present invention is to provide a method for manufacturing an oxide single crystal substrate having less dispersion in characteristics within the substrate surface.

[Means to solve the Problems]

In the manufacture method of the present invention, a powder containing a Li compound is dispersed in a medium to form a slurry, and heat is applied while the slurry is in contact with the surface of the oxide single crystal substrate, so as to diffuse Li into the substrate from the surface thereof to effect a modification of the substrate; or after the slurry is brought into contact with the surface of the oxide single crystal substrate, the oxide single crystal substrate is buried in a powder containing the Li compound, and heat is applied to effect the diffusion of Li in the substrate from the surface thereof whereby a modification of the substrate occurs.

The present disclosure generally relates to methods of preparing spherical salt particles for industrial, medical, and other uses. The methods can include combining the angular salt particles with a quantity of finishing media, for example, into a receptacle. Thereafter, the angular salt particles and the finishing media can be moved or agitated until the angular salt particles have a desired sphericity.

The present disclosure generally relates to methods of preparing spherical salt particles for industrial, medical, and other uses. The methods can include combining the angular salt particles with a quantity of finishing media, for example, into a receptacle. Thereafter, the angular salt particles and the finishing media can be moved or agitated until the angular salt particles have a desired sphericity.

A method of growing a doped monocrystalline ingot using a crystal growing system is provided. The crystal growing system includes a growth chamber, a dopant feeding device, and a feed tube. The method includes preparing a melt of semiconductor or solar-grade material in a crucible disposed within the growth chamber, introducing a solid dopant into the feed tube with the dopant feeding device, melting the solid dopant within the feed tube to a form a liquid dopant, introducing the liquid dopant into the melt below a surface of the melt, and growing a monocrystalline ingot from the melt by contacting the melt with a seed crystal and pulling the seed crystal away from the melt.

A method for manufacturing a carbon-doped silicon single crystal wafer, including steps of: preparing a silicon single crystal wafer not doped with carbon; performing a first RTA treatment on the silicon single crystal wafer in an atmosphere containing compound gas; performing a second RTA treatment at a higher temperature than the first RTA treatment; cooling the silicon single crystal wafer after the second RTA treatment; and performing a third RTA treatment. The crystal wafer is modified to a carbon-doped silicon single crystal wafer, sequentially from a surface thereof: a 3C-SiC single crystal layer; a carbon precipitation layer; a diffusion layer of interstitial carbon and silicon; and a diffusion layer of vacancy and carbon. A carbon-doped silicon single crystal wafer having a surface layer with high carbon concentration and uniform carbon concentration distribution to enable wafer strength enhancement; and a method for manufacturing the carbon-doped silicon single crystal wafer.

A method for manufacturing a carbon-doped silicon single crystal wafer, including steps of: preparing a silicon single crystal wafer not doped with carbon; performing a first RTA treatment on the silicon single crystal wafer in an atmosphere containing compound gas; performing a second RTA treatment at a higher temperature than the first RTA treatment; cooling the silicon single crystal wafer after the second RTA treatment; and performing a third RTA treatment. The crystal wafer is modified to a carbon-doped silicon single crystal wafer, sequentially from a surface thereof: a 3C-SiC single crystal layer; a carbon precipitation layer; a diffusion layer of interstitial carbon and silicon; and a diffusion layer of vacancy and carbon. A carbon-doped silicon single crystal wafer having a surface layer with high carbon concentration and uniform carbon concentration distribution to enable wafer strength enhancement; and a method for manufacturing the carbon-doped silicon single crystal wafer.

A method for manufacturing a carbon-doped silicon single crystal wafer, including steps of: preparing a silicon single crystal wafer not doped with carbon; performing a first RTA treatment on the silicon single crystal wafer in an atmosphere containing compound gas; performing a second RTA treatment at a higher temperature than the first RTA treatment; cooling the silicon single crystal wafer after the second RTA treatment; and performing a third RTA treatment. The crystal wafer is modified to a carbon-doped silicon single crystal wafer, sequentially from a surface thereof: a 3C-SiC single crystal layer; a carbon precipitation layer; a diffusion layer of interstitial carbon and silicon; and a diffusion layer of vacancy and carbon. A carbon-doped silicon single crystal wafer having a surface layer with high carbon concentration and uniform carbon concentration distribution to enable wafer strength enhancement; and a method for manufacturing the carbon-doped silicon single crystal wafer.

A method for manufacturing a carbon-doped silicon single crystal wafer, including steps of: preparing a silicon single crystal wafer not doped with carbon; performing a first RTA treatment on the silicon single crystal wafer in an atmosphere containing compound gas; performing a second RTA treatment at a higher temperature than the first RTA treatment; cooling the silicon single crystal wafer after the second RTA treatment; and performing a third RTA treatment. The crystal wafer is modified to a carbon-doped silicon single crystal wafer, sequentially from a surface thereof: a 3C-SiC single crystal layer; a carbon precipitation layer; a diffusion layer of interstitial carbon and silicon; and a diffusion layer of vacancy and carbon. A carbon-doped silicon single crystal wafer having a surface layer with high carbon concentration and uniform carbon concentration distribution to enable wafer strength enhancement; and a method for manufacturing the carbon-doped silicon single crystal wafer.

A method of treating a substrate comprises applying an electric field to a substrate comprising a layer of a dopant on at least one surface; applying a predetermined temperature to the substrate in the electric field; applying the electric field and the predetermined temperature for a time sufficient to induce migration of the dopant into the substrate to provide a doped substrate; and removing the electric field and returning the doped substrate to about room temperature, wherein the doped substrate is characterized in that a spectral laser output of the doped substrate exhibits a nominally single frequency having a linewidth less than about 5 nm. The substrate may be a glass material, a single crystal material, a poly-crystalline material, a ceramic material, or a semiconductor material, which may be optically transparent. Before treatment, the substrate may be an undoped substrate or a doped substrate.