An apparatus for the manufacture of synthetic diamonds includes a pressure vessel having a chamber therein, and a body located in the chamber. The pressure vessel and the body are formed of materials having different coefficients of expansion. The coefficient of expansion of the body is greater than the coefficient of expansion of the pressure vessel. The pressure vessel is formed from a material having a melting point in excess of 1327° C. and capable of withstanding a pressure of at least 4.4 Gpa at a temperature of at least 1327° C. The chamber is configured to receive the body, and a carbon source, the apparatus further comprising a heating means configured to heat at least the body to a temperature at least of 1327° C. The coefficient of expansion of the body is selected such that upon heating thereof to at least 1327° C. the pressure exerted on the carbon source is at least 4.4 Gpa.

An apparatus for the manufacture of synthetic diamonds includes a pressure vessel having a chamber therein, and a body located in the chamber. The pressure vessel and the body are formed of materials having different coefficients of expansion. The coefficient of expansion of the body is greater than the coefficient of expansion of the pressure vessel. The pressure vessel is formed from a material having a melting point in excess of 1327° C. and capable of withstanding a pressure of at least 4.4 Gpa at a temperature of at least 1327° C. The chamber is configured to receive the body, and a carbon source, the apparatus further comprising a heating means configured to heat at least the body to a temperature at least of 1327° C. The coefficient of expansion of the body is selected such that upon heating thereof to at least 1327° C. the pressure exerted on the carbon source is at least 4.4 Gpa.

A system for producing a ribbon from a melt includes a crucible to contain a melt and a cold block. The cold block has a surface that directly faces an exposed surface of the melt. A ribbon is formed on the melt using the cold block. A furnace is operatively connected to the crucible. The ribbon passes through the furnace after removal from the melt. The furnace includes at least one gas jet. The gas jet can dope the ribbon, form a diffusion barrier on the ribbon, and/or passivate the ribbon. Part of the ribbon passes through the furnace while part of the ribbon is being formed in the crucible using the cold block.

A wafer boat structure as well as a wafer boat assembly and a diffusion furnace with the wafer boat structure are provided. The wafer boat structure includes a supporting frame and a wafer supporting part. The supporting frame includes an upper supporting member and a lower supporting member. A plurality of supporting rods are arranged between the upper supporting member and the lower supporting member. An opening for access of wafers is formed between each two adjacent supporting rods. The wafer supporting part is arranged on the supporting rods for supporting the wafer. The wafer supporting part comprises a supporting plate and at least one wafer board. The wafer board is arranged on the inner side of the supporting rod so as to support the edge of the wafer.

A wafer boat structure as well as a wafer boat assembly and a diffusion furnace with the wafer boat structure are provided. The wafer boat structure includes a supporting frame and a wafer supporting part. The supporting frame includes an upper supporting member and a lower supporting member. A plurality of supporting rods are arranged between the upper supporting member and the lower supporting member. An opening for access of wafers is formed between each two adjacent supporting rods. The wafer supporting part is arranged on the supporting rods for supporting the wafer. The wafer supporting part comprises a supporting plate and at least one wafer board. The wafer board is arranged on the inner side of the supporting rod so as to support the edge of the wafer.

An apparatus for the manufacture of cubic Boron Nitride includes a pressure vessel having a chamber therein, and a body located in the chamber. The pressure vessel and the body are formed of materials having different coefficients of expansion. The coefficient of expansion of the body is greater than the coefficient of expansion of the pressure vessel. The pressure vessel is formed from a material having a melting point in excess of 1327° C. and capable of withstanding a pressure of at least 4.4Gpa at a temperature of at least 1327° C. The chamber is configured to receive the body, and a Boron Nitride source, the apparatus further comprising a furnace configured to heat at least the body to a temperature at least of 1327° C. The coefficient of expansion of the body is selected such that upon heating thereof to at least 1327° C. the pressure exerted on the Boron Nitride source is at least 4.4Gpa.

An apparatus for the manufacture of cubic Boron Nitride includes a pressure vessel having a chamber therein, and a body located in the chamber. The pressure vessel and the body are formed of materials having different coefficients of expansion. The coefficient of expansion of the body is greater than the coefficient of expansion of the pressure vessel. The pressure vessel is formed from a material having a melting point in excess of 1327° C. and capable of withstanding a pressure of at least 4.4Gpa at a temperature of at least 1327° C. The chamber is configured to receive the body, and a Boron Nitride source, the apparatus further comprising a furnace configured to heat at least the body to a temperature at least of 1327° C. The coefficient of expansion of the body is selected such that upon heating thereof to at least 1327° C. the pressure exerted on the Boron Nitride source is at least 4.4Gpa.

Methods and devices for low-temperature deposition of phosphorous-doped silicon layers. Disilane is used as a silicon precursor, and nitrogen or a noble gas is used as a carrier gas. Phosphine is a suitable phosphorous precursor.

Methods and devices for low-temperature deposition of phosphorous-doped silicon layers. Disilane is used as a silicon precursor, and nitrogen or a noble gas is used as a carrier gas. Phosphine is a suitable phosphorous precursor.

Provided is a method of decomposing a quartz sample, which includes contacting a liquid in which at least a part of a quartz sample to be analyzed is immersed with a gas generated from a mixed acid to decompose at least a part of the quartz sample, wherein the liquid is a liquid containing at least water; and the mixed acid is a mixed acid of hydrogen fluoride and sulfuric acid, and a mole fraction of sulfuric acid in the mixed acid ranges from 0.07 to 0.40.