A method of a growing an embedded single crystal diamond structure, comprising: disposing a single crystal diamond on a non-diamond substrate, wherein the non-diamond substrate is larger than the single crystal diamond; masking a top portion of the single crystal diamond using a masking material; and using a chemical vapor deposition (CVD) growth chamber, growing polycrystalline diamond material surrounding the single crystal diamond in order to join the single crystal diamond to the polycrystalline diamond material.

A method of a growing an embedded single crystal diamond structure, comprising: disposing a single crystal diamond on a non-diamond substrate, wherein the non-diamond substrate is larger than the single crystal diamond; masking a top portion of the single crystal diamond using a masking material; and using a chemical vapor deposition (CVD) growth chamber, growing polycrystalline diamond material surrounding the single crystal diamond in order to join the single crystal diamond to the polycrystalline diamond material.

A composite substrate capable of improving temperature characteristics while suppressing crack generation and a method for manufacturing such composite substrate is provided. The method for manufacturing composite substrates includes: a step of preparing a piezoelectric material substrate having a rough surface; a step of removing the damaged layer by etching the rough surface of the piezoelectric material substrate using a chemical process; a step of depositing an intervening layer on the rough surface of the piezoelectric material substrate from which the damaged layer has been removed; a step of flattening the surface of the deposited intervening layer; a step of bonding the piezoelectric material substrate to a support substrate having a lower thermal expansion coefficient than the piezoelectric material, with the deposited intervening layer in between; and a step of thinning the piezoelectric material substrate after bonding. Lithium tantalate (LT) or lithium niobate (LN) are suitable as the piezoelectric material.

A novel metal oxide is provided. The metal oxide includes a c-axis aligned crystal and contains indium, an element M (M is gallium, aluminum, yttrium, or tin), and zinc. In the metal oxide, the diffusion length of hydrogen is 200 nm or less and absorption due to localized states measured by a CPM is 0.01/cm or less. The diffusion length of hydrogen is calculated with the temperature being 400° C. and 1 hour.

A transparent display includes a display including a transparent substrate and a patterned diamond layer formed on the transparent substrate to at least in part define a diamond waveguide. At least two electronic devices can be connected by the diamond waveguide, and can include a sensor, a transducer, or electronic circuitry, including communication, control, or data processing electronic circuitry.

A transparent display includes a display including a transparent substrate and a patterned diamond layer formed on the transparent substrate to at least in part define a diamond waveguide. At least two electronic devices can be connected by the diamond waveguide, and can include a sensor, a transducer, or electronic circuitry, including communication, control, or data processing electronic circuitry.

A seed crystal layer is provided on a supporting body. A laser light is irradiated from a side of the supporting body to provide an altered portion along an interface between the supporting body and seed crystal layer. The altered layer is composed of a nitride of a group 13 element and comprising a portion into which dislocation defects are introduced or an amorphous portion.

A seed crystal layer is provided on a supporting body. A laser light is irradiated from a side of the supporting body to provide an altered portion along an interface between the supporting body and seed crystal layer. The altered layer is composed of a nitride of a group 13 element and comprising a portion into which dislocation defects are introduced or an amorphous portion.

A substrate includes a support structure comprising a polycrystalline ceramic core, a first adhesion layer encapsulating the polycrystalline ceramic core, a barrier layer encapsulating the first adhesion layer, a second adhesion layer coupled to the barrier layer, and a conductive layer coupled to the second adhesion layer. The substrate also includes a bonding layer coupled to the support structure, a substantially single crystal silicon layer coupled to the bonding layer, and an epitaxial semiconductor layer coupled to the substantially single crystal silicon layer.

A substrate includes a support structure comprising a polycrystalline ceramic core, a first adhesion layer encapsulating the polycrystalline ceramic core, a barrier layer encapsulating the first adhesion layer, a second adhesion layer coupled to the barrier layer, and a conductive layer coupled to the second adhesion layer. The substrate also includes a bonding layer coupled to the support structure, a substantially single crystal silicon layer coupled to the bonding layer, and an epitaxial semiconductor layer coupled to the substantially single crystal silicon layer.