An electrode assembly is manufactured by a process. The electrode assembly comprises an anode sheet and an anode having improved stacking characteristics of an electrode based on a shoulder portion. The shoulder portion is solid. The shoulder portion is thicker than a conventional electrode tab and has no light reflection with the application of an active material when the electrode assembly is formed, including during notching, cutting of a single electrode, and stacking.

Methods of measuring a thickness of a material are disclosed. An oscillating signal at a measurement frequency is applied to a circuit including an inductive component and a capacitive component provided using a pair of capacitive sensor electrodes adjacent the material. The measurement frequency is less than a resonant frequency of the circuit, and the resonant frequency is based on the inductive component and the capacitive component. Information regarding a value of a measured parameter is generated based on applying the oscillating signal at the measurement frequency to the circuit. A value of the measured parameter is related to the thickness of the material.

This invention relates to a container wall thickness inspection device 1 for inspecting a container 10A in which regions with a relatively greater wall thickness (flat portion Rf) and regions with a relatively smaller wall thickness (corner portion Rc) are distributed in the circumferential direction, the container wall thickness inspection device 1 comprising: a wall thickness measurement device (electrostatic capacity detector 4) with a sensor unit 5 for measuring a wall thickness of a site facing the sensor unit 5 on the outer peripheral surface of the container 10A; a rotary drive mechanism for axially rotating the container 10A around the central axis of the container in order to measure a wall thickness of the container over the entire circumference by the wall thickness measurement device; a region detection device (photoelectric sensor 8) for detecting which region of the container 10A corresponds to the site being measured for its wall thickness by the wall thickness measurement device; and a determination device for making a pass/fail determination with respect to the wall thickness of the container 10A based on measured wall thickness values over the entire circumference of the container 10a, which are obtained from outputs of the wall thickness measurement device. The determination device comprises a storage unit for storing a pass/fail determination standard value with respect to the wall thickness for each region, and a comparison unit for comparing each measured wall thickness value obtained from the outputs of the wall thickness measurement device with a pass/fail determination standard value stored in the storage unit corresponding to the region detected by the region detection device.

Disclosed are a thickness detection device, method and system, a storage medium and a processor. The thickness detection device includes: a detection unit, including a plurality of thickness detection chips, wherein the thickness detection chips are sequentially arranged at least in a second direction; and a common unit, arranged opposite and spaced from the detection unit in a first direction, wherein distances between at least two positions of a first surface of the common unit and the detection unit are different, the second direction is perpendicular to the first direction and a moving direction of an object to be detected, and the first surface is a surface of the common unit which is close to the measurement unit.

Embodiments disclosed herein include a sensor wafer. In an embodiment, the sensor wafer comprises a substrate, wherein the substrate comprises a first surface, a second surface opposite the first surface, and an edge surface between the first surface and the second surface. In an embodiment, the sensor wafer further comprises a plurality of sensor regions formed along the edge surface, wherein each sensor region comprises a self-referencing capacitive sensor.

Embodiments disclosed herein include a sensor wafer. In an embodiment, the sensor wafer comprises a substrate, wherein the substrate comprises a first surface, a second surface opposite the first surface, and an edge surface between the first surface and the second surface. In an embodiment, the sensor wafer further comprises a plurality of sensor regions formed along the edge surface, wherein each sensor region comprises a self-referencing capacitive sensor.

Methods of measuring a thickness of a material are disclosed. An oscillating signal at a measurement frequency is applied to a circuit including an inductive component and a capacitive component provided using a pair of capacitive sensor electrodes adjacent the material. The measurement frequency is less than a resonant frequency of the circuit, and the resonant frequency is based on the inductive component and the capacitive component. Information regarding a value of a measured parameter is generated based on applying the oscillating signal at the measurement frequency to the circuit. A value of the measured parameter is related to the thickness of the material.

Embodiments disclosed herein include a sensor wafer. In an embodiment, the sensor wafer comprises a substrate, wherein the substrate comprises a first surface, a second surface opposite the first surface, and an edge surface between the first surface and the second surface. In an embodiment, the sensor wafer further comprises a plurality of sensor regions formed along the edge surface, wherein each sensor region comprises a self-referencing capacitive sensor.

A device and method for detecting a film thickness are provided. The device includes: a common electrode, a detection electrode, a common electrode voltage generating circuit, and a detection electrode signal processing circuit. A detection channel for a film to be detected is formed between a first common surface and a first detection surface. The common electrode voltage generating circuit is configured to generate a voltage on the common electrode, as to induce an effective signal voltage on the detection electrode. The detection electrode signal processing circuit includes: a reset voltage time sequence control circuit, a time sequence control circuit for transferring the effective signal voltage on the detection electrode and a differential amplifier.

Embodiments disclosed herein include a sensor wafer. In an embodiment, the sensor wafer comprises a substrate, wherein the substrate comprises a first surface and a second surface opposite the first surface. In an embodiment, the sensor wafer further comprises a first conductive pad with a first surface area, wherein the first conductive pad has a surface that is substantially coplanar with the first surface of the substrate. In an embodiment, the sensor wafer further comprises a second conductive pad with a second surface area that is smaller than the first surface area, wherein the second conductive pad has a surface that is substantially coplanar with the first surface of the substrate.