Embodiments of systems and methods for measuring a surface topography of a semiconductor chip are disclosed. In an example, a method for measuring a surface topography of a semiconductor chip is disclosed. A plurality of interference signals and a plurality of spectrum signals are received by at least one processor. Each of the interference signals and spectrum signals corresponds to a respective one of a plurality of positions on a surface of the semiconductor chip. The spectrum signals are classified by the at least one processor into a plurality of categories using a model. Each of the categories corresponds to a region having a same material on the surface of the semiconductor chip. A surface height offset between a surface baseline and at least one of the categories is determined by the at least one processor based, at least in part, on a calibration signal associated with the region corresponding to the at least one of the categories. The surface topography of the semiconductor chip is characterized by the at least one processor based, at least in part, on the surface height offset and the interference signals.

An analysis apparatus includes an acquisition part that acquires a plurality of interference images of the object to be measured from the interference measurement apparatus, a calculation part that calculates a sine wave component and a cosine wave component of an interference signal for each pixel in the plurality of interference images, respectively, an error detection part that detects an error between a first Lissajous figure constructed on the basis of the sine wave component and the cosine wave component for each pixel and an ideal second Lissajous figure, a correction part that corrects the sine wave component and the cosine wave component for each pixel on the basis of the error, and a geometry calculation part that calculates surface geometry of the object to be measured on the basis of the corrected sine wave component and cosine wave component.

A measuring device (10) for the interferometric shape measurement of a surface (12) of a test object (14-1; 14-2)includes (i) a diffractive optical element (26-1; 26-2) that generates a test wave (28) from incoming measurement radiation (18), wherein the diffractive optical element radiates the test wave onto the surface of the test object, (ii) a deflection element (22) that is disposed upstream of the diffractive optical element in the beam path of the measurement radiation, and (iii) a holding device (24, 124) that holds the deflection element and that changes a position of the deflection element (22) through a combination of a tilting movement and a translation movement.

The present invention provides a reflective condensing interferometer for focusing on a preset focus. The reflective condensing interferometer includes a concave mirror set, a convex mirror, a light splitting element, and a reflecting element. The concave mirror set has first and second concave surface portions which are oppositely located on two sides of a central axis passing through the preset focus and are concave on a surface facing the central axis and the preset focus. Light is preset to be incident in parallel to the central axis in use. The convex mirror is disposed between the concave mirror set and the preset focus on the central axis, and is convex away from the preset focus. The light splitting element vertically intersects with the central axis between the convex mirror and the preset focus. The reflecting element is disposed between the light splitting element and the convex mirror.

A simultaneous phase-shift point diffraction interferometer and method for detecting wave aberration. The interferometer comprises an ideal spherical wave generation module, an optical system to be measured, an image plane mask, a polarization phase shift module, a two-dimensional polarization imaging photodetector and a data processing unit. Single photodetector is adopted to realize simultaneous detection of more than three phase shift interference patterns, and has the advantages that environmental interference suppression, a flexible optical path, high measurement accuracy, and calibration of system errors of the interferometer may be realized.

Systems and methods for measuring a surface topography of a semiconductor chip are disclosed. A disclosed system comprises a light source configured to provide low coherent light to a first beam splitter, a scanner configured to use the low coherent light reflected from the first beam splitter to scan positions on a surface of a semiconductor chip, a second beam splitter configured to receive reflected signals from the positions on the surface of the semiconductor chip, a detector configured to detect interference signals from a first output of the second beam splitter, wherein each of the interference signals corresponds to a respective one of the positions, and a spectrometer configured to detect spectrum signals from a second output of the second beam splitter, wherein each of the spectrum signals corresponds to the respective one of the positions.

An apparatus comprising means for: causing illumination of different areas of a sample with an optical frequency imaging beam at different positions at different times, wherein adjacent positions are configured to cause the corresponding areas to at least partially overlap;receiving signals indicative of back-scattering of the optical frequency imaging beam from the sample at the different times; and processing the received signals to obtain an image of the sample, wherein processing the received signals compensates for phase variations between the different positions at the different times using a matched filter derived from a scattering model of the sample.

A laser processing apparatus includes a laser oscillator that oscillates processing laser light to be incident on a processing point on a processing surface of a workpiece, a coupling mirror that deflects or transmits the processing laser light and measurement light to be incident on the processing point toward the processing point, a measurement light deflection unit that changes an incident angle of the measurement light on the coupling mirror, a lens that concentrates the processing laser light and the measurement light on the processing point, a controller that controls the laser oscillator and the measurement light deflection unit, a measurement processor that measures a depth of a keyhole generated at the processing point by the processing laser light by using an optical interference signal based on an interference generated by an optical path difference between the measurement light reflected at the processing point and reference light, and a beam position measurement unit that measures positions of the processing laser light and the measurement light.

Length metrology apparatuses and methods are disclosed for measuring both specular and non-specular surfaces with high accuracy and precision, and with suppressed phase induced distance errors. In one embodiment, a system includes a laser source exhibiting a first and second laser outputs with optical frequencies that are modulated linearly over large frequency ranges. The system further includes calibration and signal processing portions configured to determine a calibrated distance to at least one sample.

Embodiments of systems and methods for measuring a surface topography of a semiconductor chip are disclosed. In an example, a method for measuring a surface topography of a semiconductor chip is disclosed. A plurality of interference signals each corresponding to a respective one of a plurality of positions on a surface of the semiconductor chip are received by at least one processor. The plurality of interference signals are transformed by the at least one processor into a plurality of spectrum signals each corresponding to the respective one of the positions on the surface of the semiconductor chip. The spectrum signals are classified by the at least one processor into a plurality of categories using a model. Each of the categories corresponds to a region having a same material on the surface of the semiconductor chip. A surface height offset between a surface baseline and at least one of the categories is determined by the at least one processor based, at least in part, on a calibration signal associated with the region corresponding to the at least one of the categories. The surface topography of the semiconductor chip is characterized by the at least one processor based, at least in part, on the surface height offset and the interference signals.