G01J1/0209

SEMICONDUCTOR DEVICE FOR DETECTING ULTRAVIOLET AND INFRARED RADIATION AND RELATED MANUFACTURING PROCESS
20170314989 · 2017-11-02 ·

A semiconductor device for flame detection, including: a semiconductor body having a first conductivity type conductivity, delimited by a front surface and forming a cathode region; an anode region having a second conductivity type conductivity, which extends within the semiconductor body, starting from the front surface, and forms, together with the cathode region, the junction of a photodiode that detect ultraviolet radiation emitted by the flames; a supporting dielectric region; and a sensitive region, which is arranged on the supporting dielectric region and varies its own resistance as a function of the infrared radiation emitted by the flames.

STRUCTURE OF OPTICAL SENSOR
20220057259 · 2022-02-24 ·

This application provides a structure of the optical sensor, in which a photosensitive element is arranged on a substrate, a colloid layer is arranged on the upper part of the substrate and covers the photosensitive element, and a thin film is further arranged. The device includes an adhesive layer and a light-transmitting layer, the adhesive layer is disposed above one of the colloid layers, the light-transmitting layer is disposed above one of the adhesive layers, and the structure can be used to provide the film member that can be changed according to requirements The optical design reduces the production cost of the optical sensor; this application further provides a shielding layer between the film member and the colloid layer to improve the photosensitive efficiency of the optical sensor.

Optical sensor and electronic device with the same

An optical sensor and an electronic device having an optical sensor. The optical sensor includes: an optical waveguide containing a photochromic material; a light emitter that emits visible light to be incident on the optical waveguide; and a light receiver that detects the visible light emitted from the light emitter and progressing through the optical waveguide. A transmittance of the optical waveguide in relation to the visible light may be changed by the photochromic material as the optical waveguide is exposed to UV light. The optical sensor and the electronic device having the same may be variously implemented according to exemplary embodiments.

Integrated Photodetector

An integrated circuit that includes a substrate, a photodiode, and a Fresnel structure. The photodiode is formed on the substrate, and it has a p-n junction. The Fresnel structure is formed above the photodiode, and it defines a focal zone that is positioned within a proximity of the p-n junction. In one aspect, the Fresnel structure may include a trench pattern that functions as a diffraction means for redirecting and concentrating incident photons to the focal zone. In another aspect, the Fresnel structure may include a wiring pattern that functions as a diffraction means for redirecting and concentrating incident photons to the focal zone. In yet another aspect, the Fresnel structure may include a transparent dielectric pattern that functions as a refractive means for redirecting and concentrating incident photons to the focal zone.

Wideband Back-Illuminated Electromagnetic Radiation Detectors

An electromagnetic radiation detector includes an InP substrate having a first surface opposite a second surface; a first InGaAs electromagnetic radiation absorber stacked on the first surface and configured to absorb a first set of electromagnetic radiation wavelengths; a set of one or more buffer layers stacked on the first InGaAs electromagnetic radiation absorber and configured to absorb at least some of the first set of electromagnetic radiation wavelengths; a second InGaAs electromagnetic radiation absorber stacked on the set of one or more buffer layers and configured to absorb a second set of electromagnetic radiation wavelengths; and an immersion condenser lens formed on the second surface and configured to direct electromagnetic radiation through the InP substrate and toward the first InGaAs electromagnetic radiation absorber and the second InGaAs electromagnetic radiation absorber.

PHOTOELECTRIC CONVERSION ELEMENT, PHOTODETECTOR, PHOTODETECTION SYSTEM, ELECTRONIC APPARATUS, AND MOBILE BODY

A highly functional photoelectric conversion element is provided. The photoelectric conversion element includes: a first photoelectric converter that detects light in a first wavelength range and photoelectrically converts the light; a second photoelectric converter that detects light in a second wavelength range and photoelectrically converts the light to obtain distance information of a subject; and an optical filter that is disposed between the first photoelectric converter and the second photoelectric converter, and allows the light in the second wavelength range to pass therethrough more easily than the light in the first wavelength range. The first photoelectric converter includes a stacked structure and an electric charge accumulation electrode. The stacked structure includes a first electrode, a first photoelectric conversion layer, and a second electrode that are stacked in order, and the electric charge accumulation electrode is disposed to be separated from the first electrode and be opposed to the first photoelectric conversion layer with an insulating layer interposed therebetween.

Multidirectional photodetector, a portable communication tool having thereof and a method of displaying

A photodetector of the invention is characterized by having a plurality of detector elements that are arranged over a light-transparent substrate and are connected in parallel. A foldable portable communication tool having two display portions of the invention is characterized by including one photodetector which includes a plurality of detector elements connected in parallel.

Optical sensor and electronic device
09772404 · 2017-09-26 · ·

In order to provide an optical sensor that can accurately sense a direction of movement of an object to be sensed even in a case where disturbance light is present, an optical sensor of the present invention includes: a light-emitting element; a circularly-segmented light-receiving element group (RDPD), including light-receiving elements circularly provided at edges of a region on which reflected light from an object to be sensed reflecting light emitted by the light-emitting element is incident, for generating respective photocurrents upon receiving the reflected light; and a gesture circuit section for sensing a direction of movement of the object to be sensed upon receiving the photocurrents generated by the light-receiving elements included in the circularly-segmented light-receiving element group (RDPD).

SINGLE PHOTON DETECTOR DEVICE
20210381884 · 2021-12-09 ·

The invention relates to a single photon detector device for detecting an optical signal comprising an optical fiber and at least one nanowire, wherein the optical fiber comprises a core area and a cladding area and is designed to conduct the optical signal along an optical axis, wherein, with respect to the optical axis, a first area of the optical fiber is an entrance area for the optical signal and a second area of the optical fiber is a detector area, and wherein the nanowire becomes superconducting at a predetermined temperature and is designed in the superconducting state to generate an output signal as a function of the optical signal. It is provided that in the detector area of the optical fiber the nanowire extends essentially along the optical axis of the optical fiber. A single photon detector device is thus provided which has a simple structure, a high efficiency, a high detection rate and a high spectral bandwidth.

Ambient light sensor with light protection
11193821 · 2021-12-07 · ·

One or more embodiments are directed to ambient light sensor packages, and methods of making ambient light sensor packages. One embodiment is directed to an ambient light sensor package that includes an ambient light sensor die having opposing first and second surfaces, a light sensor on the first surface of the ambient light sensor die, one or more conductive bumps on the second surface of the ambient light sensor die, and a light shielding layer on at least the first surface and the second surface of the ambient light sensor die. The light shielding layer defines an opening over the light sensor. The ambient light sensor package may further include a transparent cover between the first surface of the ambient light sensor die and the light shielding layer, and an adhesive that secures the transparent cover to the ambient light sensor die.