A light detection device including a substrate, a first light detector, a second light detector, and a switch element is provided. The first light detector is disposed on the substrate and includes a first active layer. The second light detector is disposed between the substrate and the first light detector and includes a second active layer. The switch element is disposed on the substrate. A horizontal projection of the second active layer on the substrate completely falls within a horizontal projection of the first active layer on the substrate. A negative electrode of the first light detector and a negative electrode of the second light detector are electrically connected to the switch element via a first metal layer.

An optical sensing device includes a substrate, a sensing element layer, a first planarization layer, and a second planarization layer. The sensing element layer is located on the substrate and includes a plurality of sensing elements. The first planarization layer is located on the sensing element layer and has a first slit. The second planarization layer is located on the first planarization layer and has a second slit. An orthogonal projection of the first slit extending in a direction and located on the substrate is not overlapped with an orthogonal projection of the second slit extending in the same direction and located on the substrate, and the orthogonal projection of the second slit on the substrate has a curved pattern.

The invention relates to a single photon detector device for detecting an optical signal comprising an optical fiber and at least one nanowire, wherein the optical fiber comprises a core area and a cladding area and is designed to conduct the optical signal along an optical axis, wherein, with respect to the optical axis, a first area of the optical fiber is an entrance area for the optical signal and a second area of the optical fiber is a detector area, and wherein the nanowire becomes superconducting at a predetermined temperature and is designed in the superconducting state to generate an output signal as a function of the optical signal. It is provided that in the detector area of the optical fiber the nanowire extends essentially along the optical axis of the optical fiber. A single photon detector device is thus provided which has a simple structure, a high efficiency, a high detection rate and a high spectral bandwidth.

An example image sensor structure includes an image layer. The image layer includes an array of light detectors disposed therein. A device stack is disposed over the image layer. An array of light guides is disposed in the device stack. Each light guide is associated with at least one light detector of the array of light detectors. A passivation stack is disposed over the device stack. The passivation stack includes a bottom surface in direct contact with a top surface of the light guides. An array of nanowells is disposed in a top layer of the passivation stack. Each nanowell is associated with a light guide of the array of light guides. A crosstalk blocking metal structure is disposed in the passivation stack. The crosstalk blocking metal structure reduces crosstalk within the passivation stack.

An optical sensing device includes a substrate, a sensing element layer, a first planarization layer, and a second planarization layer. The sensing element layer is located on the substrate and includes a plurality of sensing elements. The first planarization layer is located on the sensing element layer and has a first slit. The second planarization layer is located on the first planarization layer and has a second slit. An orthogonal projection of the first slit extending in a direction and located on the substrate is not overlapped with an orthogonal projection of the second slit extending in the same direction and located on the substrate, and the orthogonal projection of the second slit on the substrate has a curved pattern.

An example image sensor structure includes an image layer. The image layer includes an array of light detectors disposed therein. A device stack is disposed over the image layer. An array of light guides is disposed in the device stack. Each light guide is associated with at least one light detector of the array of light detectors. A passivation stack is disposed over the device stack. The passivation stack includes a bottom surface in direct contact with a top surface of the light guides. An array of nanowells is disposed in a top layer of the passivation stack. Each nanowell is associated with a light guide of the array of light guides. A crosstalk blocking metal structure is disposed in the passivation stack. The crosstalk blocking metal structure reduces crosstalk within the passivation stack.

A light detecting device is provided, comprising a substrate having a patterned metal layer formed thereon; a dielectric layer formed on the substrate, first pixel element formed on the dielectric layer, and a second pixel element. The dielectric layer at least has a first trench, and the first trench is positioned below the level of the first pixel element. The second pixel element comprises a buried portion formed correspondingly to the first trench, and an upper portion formed on the buried portion. The upper portion of the second pixel element is positioned at the same level of the first pixel element.

The present disclosure describes subassemblies and optoelectronic modules in which an optics system, or a spacer laterally surrounding a cover glass, includes a flange which facilitates mechanical attachment of the optics system to the spacer.

Disclosed is a package structure and a method for manufacturing the same. The package structure comprises: a lead frame; a first light sensor being electrically coupled to the lead frame; a light emitter separated from the first light sensor and being electrically coupled to the lead frame; a first plastic body in which a trench is formed; and a photoresist layer located on a side surface of the first plastic body, wherein the first plastic body is separated by the trench into a first portion covering the light emitter and a second portion covering the first light sensor, the first portion of the first plastic body has the side surface facing the first light sensor. The photoresist layer prevents the light with a specific wavelength from passing through and avoids the influence to the normal operation of the light sensor, so that the anti-interference capacity of the light sensor is ensured and the size of package structure is reduced while the light sensor is integrated.

The present disclosure relates to an optical module, including: a carrier, a emitter, a detector and an encapsulant. The carrier has a first surface. The emitter is disposed above the first surface. The detector is disposed above the first surface. The encapsulant is disposed on the first surface and exposes at least a portion of the emitter.