A temperature sensing system for a resistive welding process for a tube performs repeatable temperature measurement using a camera to detect multiple distinct visible light wavelengths even as the ambient environment in the view path changes. Sensed colors in a field of view in the vicinity of a weld are output to a computing element that calculates a corresponding temperature and alerts an operator when the sensed color exceeds a preset color range.

A semiconductor gas imaging device system and method includes one chip dual band Type II Superlattice (T2SL) detectors comprising two back to back diodes wherein the bias is flipped. Embodiment voltages are +1V to 1V. For embodiments, only the detector with negative voltage detects incoming infrared radiation.

Various embodiments disclosed herein describe an infrared (IR) imaging system for detecting a gas. The imaging system can include an optical filter that selectively passes light having a wavelength in a range of 1585 nm to 1595 nm while attenuating light at wavelengths above 1600 nm and below 1580 nm. The system can include an optical detector array sensitive to light having a wavelength of 1590 that is positioned rear of the optical filter.

Various embodiments disclosed herein describe an infrared (IR) imaging system for detecting a gas. The imaging system can include an optical filter that selectively passes light having a wavelength in a range of 1585 nm to 1595 nm while attenuating light at wavelengths above 1600 nm and below 1580 nm. The system can include an optical detector array sensitive to light having a wavelength of 1590 that is positioned rear of the optical filter.

An atmosphere of ammonia that absorbs infrared light in a wavelength band overlapping with the measurement wavelength band of a radiation thermometer is formed in a chamber in which a semiconductor wafer is thermally treated. A filter that selectively transmits infrared light having a wavelength not overlapping with the absorption wavelength band of ammonia is installed between an optical lens system and a detector of the radiation thermometer to avoid influence of the infrared light absorption by ammonia. A conversion table corresponding to the installed filter is selected from a plurality of conversion tables representing a correlation between energy of infrared light incident on the radiation thermometer and temperature of a black body, and is used at the radiation thermometer. Accordingly, the temperature of the semiconductor wafer can be accurately measured in the atmosphere of ammonia.

A system and method for processing a daytime IR image to discriminate between solar glints and hotspots, where the latter represent man-made activity. Two spectrally distinct thermal wavelength bands are defined and respective spectral intensities are detected for a corresponding pixel in an image. A figure of merit is calculated as a function of the detected spectral intensities. The calculated figure of merit is compared to a predetermined rule to determine whether the corresponding pixel is a glint or a hotspot.

An object of the present invention is to provide a radiation temperature measuring device capable of preventing reduction in the accuracy of temperature measurement due to an electromagnetic wave reflected by a measurement target. A radiation temperature measuring device includes a reflective polarizing plate configured to reflect a polarized wave of one direction in an electromagnetic wave radiated from an object to be measured and transmit or absorb a polarized wave of a direction perpendicular to the one direction and an infrared sensor configured to detect the polarized electromagnetic wave of the one direction reflected by the reflective polarizing plate.

Various embodiments disclosed herein describe an infrared (IR) imaging system for detecting a gas. The imaging system can include an optical filter that selectively passes light having a wavelength in a range of 1585 nm to 1595 nm while attenuating light at wavelengths above 1600 nm and below 1580 nm. The system can include an optical detector array sensitive to light having a wavelength of 1590 that is positioned rear of the optical filter.

Disclosed in the present invention is a visual monitoring method for cross-section temperature fields and radiation characteristics of boiler furnaces by combining radiation images and spectra. Image detectors can be directly inserted into observation holes of a boiler to acquire flame image data, so that when the detection system is applied to a power station boiler, extra holes are not required to be drilled, and therefore, there is no risk that the strength of a furnace wall of the boiler is reduced by drilling holes. According to cross-section temperature fields of a furnace measured by the detection system, the state of combustion in the furnace can be accurately judged, which can play an accurate and effective guiding role in boiler combustion control, and reduce the temperature deviation in each combustion area of the boiler so as to keep the boiler running smoothly, thereby improving the combustion efficiency of the boiler.

An atmosphere of ammonia that absorbs infrared light in a wavelength band overlapping with the measurement wavelength band of a radiation thermometer is formed in a chamber in which a semiconductor wafer is thermally treated. A filter that selectively transmits infrared light having a wavelength not overlapping with the absorption wavelength band of ammonia is installed between an optical lens system and a detector of the radiation thermometer to avoid influence of the infrared light absorption by ammonia. A conversion table corresponding to the installed filter is selected from a plurality of conversion tables representing a correlation between energy of infrared light incident on the radiation thermometer and temperature of a black body, and is used at the radiation thermometer. Accordingly, the temperature of the semiconductor wafer can be accurately measured in the atmosphere of ammonia.