An electronic device may include: a display having at least one hole disposed in at least a part thereof such that light from the outside can be transmitted therethrough; a light-emitting element disposed under the display and configured to output a first infrared ray to the outside; a first light-receiving element disposed under the display at a position corresponding to the at least one hole, and configured to receive a second infrared ray transmitted from the outside; a second light-receiving element disposed under the display at a position where light from the outside is shielded; and at least one processor configured to, based on that a first sensing value according to the second infrared ray, output from the first light-receiving element, satisfies a first specified condition, while the first infrared ray is output: based on that a second sensing value output from the second light-receiving element does not satisfy a second specified condition, identify that a proximate object exists, and based on that the second sensing value satisfies the second specified condition, identify that the proximate object does not exist.

A short-wave infra-red, SWIR, radiation detection device comprises: a first metallic layer providing a first set of connections from a readout circuit to respective cells of a matrix, the metallic layer reflecting SWIR wavelength radiation. Each matrix cell comprises at least one stack of layers including: a first layer of doped semiconductor material formed on the first metallic layer; an at least partially microcrystalline semiconductor layer formed over the first doped layer; a second layer of semiconductor material formed on the microcrystalline semiconductor layer; at least one microcrystalline semiconductor layer; and in some embodiments a second metallic layer interfacing the microcrystalline semiconductor layer(s), the interface being responsive to incident SWIR radiation to generate carriers within the stack. The stack has a thickness T=λ/2N between reflective surfaces of the first and second metallic layers.

There is disclosed a structure and the manufacturing method for packaging for thermopile or equivalent thermal sensing elements of single orientation, 1D arrays and 2D arrays used for thermal or equivalent media sensing. The sensing core has a primary use as a detection core, and accessory use for improved thermal stability through maximizing the flow of heat energy, through the various packaging constituents to achieve a zero thermal gradient effect. The core package comprises of a substrate, a heat spreader for the thermal sensor, an external housing material manufactured from a wafer fabrication process, and an optics of a silicon wafer and other optical components that is attached to the external housing enclosure using wafer level processing. The external housing enclosure can be scaled to a layered architecture into distinct layers that are stacked vertically on top of each other to make for a multi-lens package.

We disclose a chemical sensing device for detecting a fluid. The sensing device comprises: at least one substrate region comprising at least one etched portion; a dielectric region formed on the at least one substrate region, the dielectric region comprising at least one dielectric membrane region adjacent to the at least one etched portion; an optical source for emitting an infra-red (IR) signal; an optical detector for detecting the IR signal emitted from the optical source; one or more further substrates formed on or under the dielectric region, said one or more further substrates defining an optical path for the IR signal to propagate from the optical source to the optical detector. At least one of the optical source and optical detector is formed in or on the dielectric membrane region.

In one aspect, the invention provides a nanobolometer cell including a base layer, a dielectric spacer layer above and adjacent to the base layer, an ultrathin silicon film above and adjacent to the spacer layer, and at least one plasmonic optical antenna resonator above and adjacent to the silicon film.

A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region is disclosed. The MEMS components, for example, are infrared (IR) thermosensors. The MEMS sensors are integrated on the CMOS device monolithically after CMOS processing. For example, the MEMS sensors are formed over a BEOL dielectric of a CMOS device. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region.

An optical sensor package includes an IC die including a light sensor element, an output node, and bond pads including a bond pad coupled to the output node. A leadframe includes a plurality of leads or lead terminals, wherein at least some of the plurality of leads or lead terminals are coupled to the bond pads including to the bond pad coupled to the output node. A mold compound provides encapsulation for the optical sensor package including for the light sensor element. The mold compound includes a polymer-base material having filler particles including at least one of infrared or terahertz transparent particle composition provided in a sufficient concentration so that the mold compound is optically transparent for providing an optical transparency of at least 50% for a minimum mold thickness of 500 μm in a portion of at least one of an infrared frequency range and a terahertz frequency range.

Described herein is a detector for detecting optical radiation, especially within the infrared spectral range, specifically with regard to sensing at least one of transmissivity, absorption, emission and reflectivity, being capable of avoiding or diminishing a cross detection between sensor areas, specifically between adjacent sensor areas, thus, avoiding or diminishing a deterioration of a measurement based on the at least one sensor signal.

An infrared detector includes a substrate in which a void is formed, a micro-resonator suspended over the void, an infrared absorber on an upper surface of the micro-resonator, a thermal isolation bridge supporting the micro-resonator, a first waveguide optically coupled with the micro-resonator, a second waveguide intersecting the first waveguide and optically coupled with the micro-resonator, a light source optically coupled with the first waveguide, and a photodetector optically coupled with the second waveguide.

The present invention provides apparatuses comprising a plurality of junctions providing a Seebeck effect, configured as alternating hot and cold junctions. The apparatus can be configured such that the cold junctions exhibit a different thermal behavior than the hot junctions in response to incident radiation. The junctions can be connected in series, such that the sum of the Seebeck effect from the plurality of junctions provides a sensitive, inherently calibrated indication of heating of the apparatus responsive to incident radiation, and therefore of the radiation itself.