A light detection device includes a Fabry-Perot interference filter, a light detector, a spacer that has a placement surface on which a portion outside a light transmission region in a bottom surface of the interference filter is placed, and an adhesive member that adheres the interference filter and the spacer to each other. Elastic modulus of the adhesive member is smaller than elastic modulus of the spacer. At least a part of a lateral surface of the interference filter is located on the placement surface such that a part of the placement surface of the spacer is disposed outside the lateral surface. The adhesive member is disposed in a corner portion formed by the lateral surface of the interference filter and the part of the placement surface of the spacer and contacts each of the lateral surface and the part of the placement surface.

Methods of sensor readout and calibration and circuits for performing the methods are disclosed. In some embodiments, the methods include driving an active sensor at a voltage. In some embodiments, the methods include use of a calibration sensor, and the circuits include the calibration sensor. In some embodiments, the methods include use of a calibration current source and circuits include the calibration current source. In some embodiments, a sensor circuit includes a Sigma-Delta ADC. In some embodiments, a column of sensors is readout using first and second readout circuits during a same row time.

A component for detecting electromagnetic radiation includes a detection structure and a supply circuit for the detection structure. The detection structure includes a transistor associated with an absorbent element for detecting the rise in temperature of the absorbent element when electromagnetic radiation is absorbed. The supply circuit is configured to supply the detection structure in operation such that a channel zone of the structure has, at the location of one of its first and the second faces, a layer having carriers of a second type of conductivity opposite to a first type of conductivity of a source zone and of a drain zone of the transistor, the layer being referred to as blocking layer.

A MEMS infrared sensing device includes a substrate and an infrared sensing element. The infrared sensing element is provided above the substrate and has a sensing area and an infrared absorbing area which do not overlap each other. The infrared sensing element includes two infrared absorbing structures, an infrared sensing layer provided between the two infrared absorbing structures, and an interdigitated electrode structure located in the sensing area. Each of the two infrared absorbing structures includes at least one infrared absorbing layer, and the two infrared absorbing structures are located in the sensing area and the infrared absorbing area. The infrared sensing layer is located in the sensing area and does not extend into the infrared absorbing area. The interdigitated electrode structure is in electrical contact with the infrared sensing layer.

A Fabry-Perot interference filter includes: a substrate having a first surface and a second surface facing each other; a first layer structure disposed on the first surface; and a second layer structure disposed on the second surface, wherein the first layer structure is provided with a first mirror portion and a second mirror portion facing each other with an air gap therebetween, and a distance between the first mirror portion and the second mirror portion is varied, and the second layer structure is formed with a separation region separating at least a part of the second layer structure into one side and another side in a direction along the second surface.

Methods of sensor readout and calibration and circuits for performing the methods are disclosed. In some embodiments, the methods include driving an active sensor at a voltage. In some embodiments, the methods include use of a calibration sensor, and the circuits include the calibration sensor. In some embodiments, the methods include use of a calibration current source and circuits include the calibration current source. In some embodiments, a sensor circuit includes a Sigma-Delta ADC. In some embodiments, a column of sensors is readout using first and second readout circuits during a same row time.

An infrared imaging microbolometer integrating a membrane assembled in suspension above a substrate by means of holding arms attached to anchoring nails is disclosed. The membrane includes a support layer crossing the upper end of the anchoring nails. It also includes an absorber or electrode deposited on the support layer and on the anchoring nails with a pattern forming at least two electrodes. It further includes a dielectric layer deposited on the absorber or electrode and on the support layer, at least two conductive vias formed through the dielectric layer in contact with the at least two electrodes, and a thermometric or thermoresistive material arranged on a planar surface formed at the level of the upper ends of the conductive vias.

An optical sensing device includes a substrate, a sensing element layer, a first planarization layer, and a second planarization layer. The sensing element layer is located on the substrate and includes a plurality of sensing elements. The first planarization layer is located on the sensing element layer and has a first slit. The second planarization layer is located on the first planarization layer and has a second slit. An orthogonal projection of the first slit extending in a direction and located on the substrate is not overlapped with an orthogonal projection of the second slit extending in the same direction and located on the substrate, and the orthogonal projection of the second slit on the substrate has a curved pattern.

A process for fabricating a detecting device includes producing a getter pad based on amorphous carbon resting on a mineral sacrificial layer that covers a thermal detector and producing a thin encapsulating layer that rests on the mineral sacrificial layer and that covers an upper face and sidewalls of the getter pad. The mineral sacrificial layer is removed via a first chemical etch, and a protective segment of the getter pad is removed via a second chemical etch.

A light detector includes a substrate, a membrane disposed on a surface of the substrate, a first and a second electrode post supporting the membrane. The first electrode post includes a first main body portion having a tubular shape spreading from a first electrode pad toward a side opposite to the substrate, and a first flange portion provided in an end portion at the side opposite to the substrate in the first main body portion. The first flange portion is provided with a first sloped surface inclined so as to approach the substrate as it goes away from the first main body portion. A first wiring layer reaches an inner surface of the first main body portion through the first sloped surface. The second electrode post and the second wiring layer are formed similarly to the first electrode post and the first wiring layer.