A light detector includes a substrate, a membrane disposed on a surface of the substrate, a first and a second electrode post supporting the membrane. The first electrode post includes a first main body portion having a tubular shape spreading from a first electrode pad toward a side opposite to the substrate, and a first flange portion provided in an end portion at the side opposite to the substrate in the first main body portion. The first flange portion is provided with a first sloped surface inclined so as to approach the substrate as it goes away from the first main body portion. A first wiring layer reaches an inner surface of the first main body portion through the first sloped surface. The second electrode post and the second wiring layer are formed similarly to the first electrode post and the first wiring layer.

An infrared light source device includes: a heater portion which emits infrared light by being heated; and a cover member arranged to cover an entire circumference of the heater portion without contacting the heater portion, and having a hole formed therein for emitting the infrared light from the heater portion to outside. A material for the cover member is a pure aluminum (an aluminum alloy with a purity of 99% or more), which has a high heat reflectivity and is less likely to be denatured by heat dissipation from the heater portion.

Sensor interconnects and supports and methods of making them utilize phonon disruptors for increased thermal resistance while maintaining acceptable electrical signal quality in materials. Phonon disruptors include, but are not limited to, structural features such as interfaces, grain boundaries, and point scattering sites, for example, that are designed to scatter heat carriers while allowing electrons to pass through the material. Some embodiments herein involve designing selected stacks of alternating or sequential material pairs within sensor interconnects.

A terahertz sensor based on a dielectric metasurface, including a sensing element, and a thermosensitive circuit connected to the sensing element. The sensing element is composed of a cylindrical semiconductor doped with a conductive material. The conductive material is configured to change conductivity of the cylindrical semiconductor to enable the cylindrical semiconductor to absorb electromagnetic waves in terahertz region.

Sensor interconnects and supports and methods of making them utilize phonon disruptors for increased thermal resistance while maintaining acceptable electrical signal quality in materials. Phonon disruptors include the use of an electrically conductive alloy material or intermetallic material of at least two or more elements to promote scattering of phonons. These materials are selected to scatter heat carriers while allowing electrons to pass through the material.

A wearable environmental sensor includes an environmental sensor arranged on a wall surface of a housing including a sealed section, the wall being in contact with an environment, and a protective structure formed around the environmental sensor, wherein the protective structure includes a plurality of ventilating holes, a sensor surface of the environmental sensor is arranged to face an opening of at least one of the ventilating holes, and an attaching part for attaching the environmental sensor to the wall surface comes into contact only with an edge of a sensor substrate of the environmental sensor and with a portion of a back face of the sensor substrate.

The invention relates to UV, visible light and infrared radiation sensors, in particular to high-bandwidth thin-film electromagnetic radiation sensors, operating using the principle of thermoelectric effect. According to one embodiment the sensor comprises: a thermoelectric active layer, an electrode layer one and an electrode layer two, wherein the electrode layer one is located below the thermoelectric active layer and the electrode layer two is located above the thermoelectric active layer, whereby the sensor is designed so that the thermal gradient can be created and the electrical voltage can be measured perpendicular to the thermoelectric active layer, between the electrode layer one and the electrode layer two, wherein the material of the thermoelectric active layer is low molecular weight organic compound, selected so that its thermal conductivity would be less than 1 W/(m K{circumflex over ( )}2), Seebeck coefficient modulus would be greater than 100 μV/K and its molecular weight is less than 900 Da.

An object of the present invention is to provide a bolometer having a high TCR value and a low resistance, and a method for manufacturing the same.

According to the present invention, a bolometer manufacturing method including: fabricating an interlayer having a function that enhances binding between a substrate and a carbon nanotube, in a predetermined shape on the substrate; and, making a semiconducting carbon nanotube dispersion liquid move on the interlayer in one direction relative to the fabricated interlayer is provided.

There is provided a fiber optic temperature probe having a base, a first tube connected to the base, a second tube provided coaxially within the first tube, a probe tip extending through an opening in a distal end of the first tube; and an optical fiber extending from within the base through an opening in the proximal end of the first tube and being substantially coaxial with respect to the first tube. There is also provided a fiber optic temperature probe having a base, a first tube connected to the base, a probe tip extending through an opening in a distal end of the first tube, an optical fiber extending from within the base through an opening in the proximal end of the first tube and being substantially coaxial with respect to the first tube, and a first lens positioned between the probe tip and the optical fiber.

The present disclosure is a infrared sensor capable of being integrated into a IR focal plane array. It includes of a CMOS based readout circuit with preamplification, noise filtering, and row/column address control. Using either a microbolometer device structure with either a thermal sensing element of vanadium oxide or amorphous silicon, a nanocomposite is fabricated on top of either of these materials comprising aligned or unaligned carbon nanotube films with IR trans missive layer of silicon nitride followed by one to five monolayers of graphene. These layers are connected in series minimizing the noise sources and enhancing the NEDT of each film. The resulting IR sensor is capable of NEDT of less than 1 mK. The wavelength response is from 2 to 12 microns. The approach is low cost using a process that takes advantage of the economies of scale of wafer level CMOS.