A component for detecting electromagnetic radiation includes a detection structure and a supply circuit for the detection structure. The detection structure includes a transistor associated with an absorbent element for detecting the rise in temperature of the absorbent element when electromagnetic radiation is absorbed. The supply circuit is configured to supply the detection structure in operation such that a channel zone of the structure has, at the location of one of its first and the second faces, a layer having carriers of a second type of conductivity opposite to a first type of conductivity of a source zone and of a drain zone of the transistor, the layer being referred to as blocking layer.

A flexible infrared irradiation and temperature sensor is provided. The sensor includes a substantially cubic deformable rubber substrate and a conductive layer embedded in the rubber substrate, wherein the conductive layer comprises a middle portion comprising a composite film of carbon nanotubes (CNTs) and nickel phthalocyanine (NiPc); and one or more exterior portions comprising carbon nanotubes, wherein the one or more exterior portions do not include NiPc.

A far infrared sensor package includes a package body and a plurality of far infrared sensor array integrated circuits. The plurality of far infrared sensor array integrated circuits are disposed on a same plane and inside the package body. Each of the far infrared sensor array integrated circuits includes a far infrared sensing element array of a same size.

An infrared imaging microbolometer integrating a membrane assembled in suspension above a substrate by means of holding arms attached to anchoring nails is disclosed. The membrane includes a support layer crossing the upper end of the anchoring nails. It also includes an absorber or electrode deposited on the support layer and on the anchoring nails with a pattern forming at least two electrodes. It further includes a dielectric layer deposited on the absorber or electrode and on the support layer, at least two conductive vias formed through the dielectric layer in contact with the at least two electrodes, and a thermometric or thermoresistive material arranged on a planar surface formed at the level of the upper ends of the conductive vias.

An optical device is provided. The optical device includes a time-of-flight (TOF) sensor array, a photon conversion thin film, and a light source. The photon conversion thin film is disposed above the time-of-flight sensor array. The light source emits light with a first wavelength towards the photon conversion thin film to be converted into light with a second wavelength received by the time-of-flight sensor array. The second wavelength is longer than the first wavelength.

A thermal sensor package is provided. The thermal sensor package includes a carrier, an integrated circuit chip (IC), an adhesive, a thermal sensor, and a cover that are stacked form bottom to top. The carrier defines a space. The IC and thermal sensor are arranged in the space. At least one part of the adhesive is disposed between the thermal sensor and the IC. The cover closes the space defined by the carrier.

The present invention relates to a method of making a light converting optical system. The method involves providing a first optical layer having a microstructured front surface comprising an array of linear grooves that reflect first light rays using total internal reflection and deflect second light rays using refraction. A thin sheet of reflective light scattering material is positioned parallel to the first optical layer. A second optical layer is provided with a microstructured front surface. A continuous photoabsorptive film layer comprising a light converting semiconductor material is positioned between the first optical layer and the reflective material, with a thickness less than the minimum thickness required for absorbing all light traversing through the film layer. The method further involves providing a light source and positioning the second optical layer on the light path between the light source and the photoabsorptive film layer.

Systems, methods, and apparatuses for providing electromagnetic radiation sensing using sequential beam splitting. The apparatuses can include a micro-mirror chip having a plurality of light reflecting surfaces, an image sensor having an imaging surface, and a beamsplitter unit located between the micro-mirror chip and the image sensor. The beamsplitter unit includes a plurality of beamsplitters aligned along a horizontal axis that is parallel to the micro-mirror chip and the imaging surface. The beamsplitters implement the sequential beam splitting. Because of the structure of the beamsplitter unit, the height of the arrangement of the micro-mirror chip, the beamsplitter unit, and the image sensor is reduced such that the arrangement can fit within a mobile device. Within a mobile device, the apparatuses can be utilized for human detection, fire detection, gas detection, temperature measurements, environmental monitoring, energy saving, behavior analysis, surveillance, information gathering and for human-machine interfaces.

A high-performance optical absorber is provided having a texturized base layer. The base layer has one or more of a polymer film and a polymer coating. A surface layer is located above and immediately adjacent to the base layer and the surface layer joined to the base layer. The surface layer comprises a plasma-functionalized, non-woven carbon nanotube (CNT) sheet, wherein the base layer texturization comprises one or more of substantially rectangular ridges, substantially triangular ridges, substantially pyramidal ridges, and truncated, substantially pyramidal ridges. The CNT sheet has a thickness greater than or equal to 10×λ, where λ is the wavelength of the incident light. In certain embodiments the base layer has a height above the surface layer greater than or equal to 10×λ, where λ is the wavelength of the incident light.

A black silicon carbide ceramic based thermoelectric photodetector, and a thermoelectric optical power meter/thermoelectric optical energy meter using same. The black silicon carbide ceramic based thermoelectric photodetector comprises a thermal conduction plate (21) made of a black silicon carbide ceramic, wherein the surface of one side of the thermal conduction plate (21) is an optical absorption surface (211); and a thermopile (22) or a series connection conductive metal layer (302) is arranged on the surface of either side of the thermal conduction plate (21) to constitute the thermoelectric photodetector. In the thermoelectric photodetector, the black silicon carbide ceramic is used as both the thermal conduction plate (21) and a light absorber, and is directly combined with the thermopile (22) or the series connection conductive metal layer (302) to constitute the thermoelectric photodetector, thereby simplifying the structure of the thermoelectric photodetector.