A device (20) for detecting a temperature on a surface (15) of an optical element (14) for semiconductor lithography. The device includes an optical element (14) having a face (16) irradiated with electromagnetic radiation (7, 8, 43), a temperature recording device (21), and a temperature controlled element (22) configured to be temperature-controlled and arranged so that the predominant proportion of the intensity of the thermal radiation (25.2) detected by the temperature recording device and reflected by reflection at the surface of the optical element is emitted by the temperature-controlled element.

Also disclosed are an installation (1) for producing a surface (15) of an optical element (14) for semiconductor lithography and a method for producing a surface (15) of an optical element (14) of a projection exposure apparatus (30), wherein the surface is temperature-controlled and the surface temperature is detected during the temperature control.

An object of the present invention is to provide a radiation temperature measuring device capable of preventing reduction in the accuracy of temperature measurement due to an electromagnetic wave reflected by a measurement target. A radiation temperature measuring device includes a reflective polarizing plate configured to reflect a polarized wave of one direction in an electromagnetic wave radiated from an object to be measured and transmit or absorb a polarized wave of a direction perpendicular to the one direction and an infrared sensor configured to detect the polarized electromagnetic wave of the one direction reflected by the reflective polarizing plate.

An object of the present invention is to provide a radiation temperature measuring device capable of preventing reduction in the accuracy of temperature measurement due to an electromagnetic wave reflected by a measurement target. A radiation temperature measuring device includes a reflective polarizing plate configured to reflect a polarized wave of one direction in an electromagnetic wave radiated from an object to be measured and transmit or absorb a polarized wave of a direction perpendicular to the one direction and an infrared sensor configured to detect the polarized electromagnetic wave of the one direction reflected by the reflective polarizing plate.

The present disclosure relates to systems, vehicles, and methods relating to imaging and object detection using polarization-based detection of infrared light. An example system includes at least one infrared detector configured to detect infrared light corresponding to a target object within a field of view. The infrared light includes at least one of a first polarization or a second polarization. The system also includes a controller configured to carry out operations. The operations include receiving, from the at least one infrared detector, information indicative of infrared light corresponding to the target object. The operations also include determining, based on the received information, a polarization ratio corresponding to the target object. The polarization ratio comprises a first polarization intensity divided by a second polarization intensity. The operations also include determining, based on the polarization ratio, that the infrared light corresponding to the target object comprises direct light or reflected light.

The present disclosure relates to systems, vehicles, and methods relating to imaging and object detection using polarization-based detection of infrared light. An example system includes at least one infrared detector configured to detect infrared light corresponding to a target object within a field of view. The infrared light includes at least one of a first polarization or a second polarization. The system also includes a controller configured to carry out operations. The operations include receiving, from the at least one infrared detector, information indicative of infrared light corresponding to the target object. The operations also include determining, based on the received information, a polarization ratio corresponding to the target object. The polarization ratio comprises a first polarization intensity divided by a second polarization intensity. The operations also include determining, based on the polarization ratio, that the infrared light corresponding to the target object comprises direct light or reflected light.

This relates to sensor systems, detectors, imagers, and readout integrated circuits (ROICs) configured to selectively detect one or more frequencies or polarizations of light, capable of operating with a wide dynamic range, or any combination thereof. In some examples, the detector can include one or more light absorbers; the patterns and/or properties of a light absorber can be configured based on the desired measurement wavelength range and/or polarization direction. In some examples, the detector can comprise a plurality of at least partially overlapping light absorbers for enhanced dynamic range detection. In some examples, the detector can be capable of electrostatic tuning for one or more flux levels by varying the response time or sensitivity to account for various flux levels. In some examples, the ROIC can be capable of dynamically adjusting at least one of the frame rate integrating capacitance, and power of the illumination source.

A self-contained metrology wafer carrier systems and methods of measuring one or more characteristics of semiconductor wafers are provided. A wafer carrier system includes, for instance, a housing configured for transport within the automated material handling system, the housing having a support configured to support a semiconductor wafer in the housing, and a metrology system disposed within the housing, the metrology system operable to measure at least one characteristic of the wafer, the metrology system comprising a sensing unit and a computing unit operably connected to the sensing unit. Also provided are methods of measuring one or more characteristics of a semiconductor wafer within the wafer carrier systems of the present disclosure.

A long wave infrared imaging polarimeter (LWIP) is disclosed including a pixilated polarizing array (PPA) in close proximity to a microbolometer focal plane array (MFPA), along with an alignment engine for aligning and bonding the PPA and MFPA and method for assembly.

In a thermal infrared detector having trench structures, at least one sensor element is provided between the trench structures, an etching hole through which the sensor element is hollowed out and thereby thermally insulated is provided in a substrate rear surface or on the periphery of a pixel area, and an opening portion is provided below the pixel area.

An infrared imager includes a first optical component, a second optical component, and at least one thin film dielectric layer. The first optical component has multiple first parallel conductors with a first spacing pattern, aligned in a plane perpendicular to an axis. The second optical component has multiple second parallel conductors with a second spacing pattern, aligned in a plane perpendicular to the axis, angularly offset from the first direction. The thin film dielectric layer includes a refractive index change (RIC) material disposed between and in contact with the first and second parallel conductors. The first optical component, second optical component, and at least one thin film dielectric layer form an antenna array configured to detect one or more predetermined infrared wavelengths based on at least one of the first spacing pattern or the second spacing pattern or the angular offset.