Embodiments disclosed herein include a method for determining a temperature error of a pyrometer. In an embodiment, the method comprises measuring a first signal with a first sensor of the pyrometer and measuring a second signal with a second sensor of the pyrometer. In an embodiment, the method further comprises determining a reflectivity of a reflector plate from the first signal and the second signal, and determining the temperature error using the reflectivity.

A temperature measurement method includes obtaining a target temperature of a to-be-measured region based on a temperature measurement model and an obtained infrared image of the to-be-measured region; and outputting the target temperature, where the temperature measurement model is a temperature measurement model obtained by training a neural network based on an infrared image of a black body and an infrared image of a preset region.

An edge radiation thermometer performs measurements before a semiconductor wafer is transported into a chamber. The edge radiation thermometer performs the measurements while the semiconductor wafer is supported by lift pins and while the semiconductor wafer is placed on a susceptor, after the semiconductor wafer is transported into the chamber. A controller calculates a reflectivity of the semiconductor wafer based on these measurement values. Then, the controller calculates an intensity of an ambient light receive by the edge radiation thermometer, based on the reflectivity and an intensity of synchrotron radiation radiated from a quartz window. Subsequently, the controller subtracts the intensity of the ambient light from an intensity of light received by of the edge radiation thermometer during heat treatment on the semiconductor wafer to calculate the temperature of the semiconductor wafer.

An apparatus and a method for online and real-time detection of a temperature of an epitaxial wafer (4) belong to the technical field of semiconductor detection. The apparatus comprises a MOCVD reaction chamber (1), a light source (6), a beam splitter (7), a reference light detector (8), a reflected light detector (9) and a data acquisition unit (10). The method, on the basis of the apparatus, can obtain a thermal radiation attenuation factor caused by a coating of a reactor chamber window and a reflectance attenuation factor caused by the coating of the reactor chamber window for the epitaxial wafer (4). The apparatus and method can eliminate influence of the coating of the reactor chamber window on an online and real-time temperature detection value, thereby improving the accuracy of the online and real-time temperature detection value.

An apparatus for accurate measurement of surface and sub-surface temperatures of an object from a distance without contacting the object is provided. Illustrative embodiments provide for simultaneous measurement of thermal emission and emissivity in the mm-wave regime thereby enabling real-time non-contact measurement of emissivity. Corrected temperatures for the object which may be used for calibration of infrared thermographic cameras are determined from the measurement of emissivity.

An apparatus for accurate measurement of surface and sub-surface temperatures of an object from a distance without contacting the object is provided. Illustrative embodiments provide for simultaneous measurement of thermal emission and emissivity in the mm-wave regime thereby enabling real-time non-contact measurement of emissivity. Corrected temperatures for the object which may be used for calibration of infrared thermographic cameras are determined from the measurement of emissivity.

An omnidirectional measurement system for a time-varying characteristic of atmospheric vapor radiation includes an antenna and calibrator assembly, a receiver assembly, a room temperature IF assembly, and a data acquisition and system control assembly. Atmospheric vapor features a wide profile and strong radiation in a frequency band of 183 GHz, and is often seen in the characteristic measurement of atmospheric vapor in high-altitude areas. The omnidirectional measurement system combines a superconductor-insulator-superconductor (SIS) mixer with high detection sensitivity in the frequency band of 183 GHz with a structure that integrates pitch scanning, omnidirectional scanning, and automatic calibration to achieve fast and high-precision omnidirectional scanning measurement of the time-varying characteristic of atmospheric vapor radiation. The omnidirectional measurement system has a pitch adjustment-based fast omnidirectional scanning function, and can measure the time-varying characteristic of atmospheric vapor radiation with higher precision and higher temporal resolution through the SIS mixer with higher sensitivity.

An apparatus and a method for online and real-time detection of a temperature of an epitaxial wafer (4) belong to the technical field of semiconductor detection. The apparatus comprises a MOCVD reaction chamber (1), a light source (6), a beam splitter (7), a reference light detector (8), a reflected light detector (9) and a data acquisition unit (10). The method, on the basis of the apparatus, can obtain a thermal radiation attenuation factor caused by a coating of a reactor chamber window and a reflectance attenuation factor caused by the coating of the reactor chamber window for the epitaxial wafer (4). The apparatus and method can eliminate influence of the coating of the reactor chamber window on an online and real-time temperature detection value, thereby improving the accuracy of the online and real-time temperature detection value.

An omnidirectional measurement system for a time-varying characteristic of atmospheric vapor radiation includes an antenna and calibrator assembly, a receiver assembly, a room temperature IF assembly, and a data acquisition and system control assembly. Atmospheric vapor features a wide profile and strong radiation in a frequency band of 183 GHz, and is often seen in the characteristic measurement of atmospheric vapor in high-altitude areas. The omnidirectional measurement system combines a superconductor-insulator-superconductor (SIS) mixer with high detection sensitivity in the frequency band of 183 GHz with a structure that integrates pitch scanning, omnidirectional scanning, and automatic calibration to achieve fast and high-precision omnidirectional scanning measurement of the time-varying characteristic of atmospheric vapor radiation. The omnidirectional measurement system has a pitch adjustment-based fast omnidirectional scanning function, and can measure the time-varying characteristic of atmospheric vapor radiation with higher precision and higher temporal resolution through the SIS mixer with higher sensitivity.

Embodiments disclosed herein include a method for determining a temperature error of a pyrometer. In an embodiment, the method comprises measuring a first signal with a first sensor of the pyrometer and measuring a second signal with a second sensor of the pyrometer. In an embodiment, the method further comprises determining a reflectivity of a reflector plate from the first signal and the second signal, and determining the temperature error using the reflectivity.