This invention relates to optimisation of the temperature range of thermochromic liquid crystal materials and to related methods and devices for temperature monitoring and measurement. The invention also relates to methods and devices for the improved registering of objects in contact with thermochromic liquid crystal materials.

This invention relates to optimisation of the temperature range of thermochromic liquid crystal materials and to related methods and devices for temperature monitoring and measurement. The invention also relates to methods and devices for the improved registering of objects in contact with thermochromic liquid crystal materials.

A reusable notebook is used with heat-erasable ink. The reusable notebook includes a binding configured to hold a plurality of pages, at least one cover, and at least one ready indicator. The ready indicator is configured to indicate that at least one page in the notebook has reached at least a critical temperature. The critical temperature is a predetermined minimum temperature that is sufficient to erase thermochromic ink on the page(s). The indication occurs when the ready indicator is at a temperature equal to or above a predetermined minimum temperature referred to as the ready temperature. When the ready indicator is at or above the ready temperature, the critical temperature of the at least one page is reached.

A reusable notebook is used with heat-erasable ink. The reusable notebook includes a binding configured to hold a plurality of pages, at least one cover, and at least one ready indicator. The ready indicator is configured to indicate that at least one page in the notebook has reached at least a critical temperature. The critical temperature is a predetermined minimum temperature that is sufficient to erase thermochromic ink on the page(s). The indication occurs when the ready indicator is at a temperature equal to or above a predetermined minimum temperature referred to as the ready temperature. When the ready indicator is at or above the ready temperature, the critical temperature of the at least one page is reached.

Sensors including thermal load sensors and chemical or biological load sensors, and methods of making the sensors, are disclosed. The sensors may include a solid polymeric matrix and at least one organic indicating material encapsulated within the solid polymeric matrix, wherein the organic indicating material is configured to diffuse into the solid polymeric matrix at a phase transition temperature of the organic indicating material, and wherein an extent of diffusion indicates a target load on the sensor. The target load may, for example, be a thermal load, or a chemical or biological load.

Sensors including thermal load sensors and chemical or biological load sensors, and methods of making the sensors, are disclosed. The sensors may include a solid polymeric matrix and at least one organic indicating material encapsulated within the solid polymeric matrix, wherein the organic indicating material is configured to diffuse into the solid polymeric matrix at a phase transition temperature of the organic indicating material, and wherein an extent of diffusion indicates a target load on the sensor. The target load may, for example, be a thermal load, or a chemical or biological load.

A single-crystal diamond material has a transmittance of light with a wavelength of greater than or equal to 410 nm and less than or equal to 750 nm of less than or equal to 15% for any wavelength, and is at least either of an electrical insulator according to optical evaluation and an electrical insulator according to electrical evaluation. A criterion of the optical evaluation can be a transmittance of light with a wavelength of 10.6 μm of greater than or equal to 1%. A criterion of the electrical evaluation can be an average resistivity of greater than or equal to 1×10.sup.6 Ωcm. Accordingly, a single-crystal diamond material having a low transmittance of light in the entire region of the visible light region and exhibiting a black color is provided.

A single-crystal diamond material has a transmittance of light with a wavelength of greater than or equal to 410 nm and less than or equal to 750 nm of less than or equal to 15% for any wavelength, and is at least either of an electrical insulator according to optical evaluation and an electrical insulator according to electrical evaluation. A criterion of the optical evaluation can be a transmittance of light with a wavelength of 10.6 μm of greater than or equal to 1%. A criterion of the electrical evaluation can be an average resistivity of greater than or equal to 1×10.sup.6 Ωcm. Accordingly, a single-crystal diamond material having a low transmittance of light in the entire region of the visible light region and exhibiting a black color is provided.

A method and apparatus are provided to directly and accurately detect a temperature of a semiconductor layer at the time of depositing and film-forming the semiconductor layer. First wavelength laser light having light transmissivity attenuated in a first temperature range and second wavelength laser light having light transmissivity attenuated in a second temperature range are applied to the semiconductor layer. A light receiving unit receives light passing through the semiconductor layer. An attenuation range of the laser light transmissivity is detected when the temperature of the semiconductor layer is increased and the detection light quantity of the first wavelength laser light is attenuated. As the temperature continues to increase and the detection light quantity of the second wavelength laser light exceeds an attenuation start point, the temperature of the semiconductor layer is calculated based on a detection light quantity at a predetermined measurement time and the attenuation range.

A method and apparatus are provided to directly and accurately detect a temperature of a semiconductor layer at the time of depositing and film-forming the semiconductor layer. First wavelength laser light having light transmissivity attenuated in a first temperature range and second wavelength laser light having light transmissivity attenuated in a second temperature range are applied to the semiconductor layer. A light receiving unit receives light passing through the semiconductor layer. An attenuation range of the laser light transmissivity is detected when the temperature of the semiconductor layer is increased and the detection light quantity of the first wavelength laser light is attenuated. As the temperature continues to increase and the detection light quantity of the second wavelength laser light exceeds an attenuation start point, the temperature of the semiconductor layer is calculated based on a detection light quantity at a predetermined measurement time and the attenuation range.