Technology is disclosed herein that the enhances the measurability of on-chip temperature in a cryogenic quantum computing environment. In an implementation, transceiver circuitry sends a probe signal through a target device. A lumped-element resonator device that is proximate to the surface of the target device interacts with the probe signal and modulates the probe signal. Processing circuitry reads the probe signal through the target device, and responsively measures the resonance frequency of the lumped-element resonator device. The processing circuitry correlates the measured resonance frequency with a temperature and responsively determines the temperature of the target device.

Technology is disclosed herein that the enhances the measurability of on-chip temperature in a cryogenic quantum computing environment. In an implementation, transceiver circuitry sends a probe signal through a target device. A lumped-element resonator device that is proximate to the surface of the target device interacts with the probe signal and modulates the probe signal. Processing circuitry reads the probe signal through the target device, and responsively measures the resonance frequency of the lumped-element resonator device. The processing circuitry correlates the measured resonance frequency with a temperature and responsively determines the temperature of the target device.

A process variable transmitter for sensing a cryogenic temperature in an industrial process includes a cryogenic temperature sensor configured to be thermally coupled to an industrial process. The cryogenic temperature sensor has an electrical resistance which changes in response to changes in a cryogenic temperature and the industrial process is at the cryogenic temperature. Resistance measurement circuitry is electrically coupled to the cryogenic temperature sensor and measures a sensor resistance over a resistance range and responsively provides an output related to temperature based upon the measured resistance. Transmitter output circuitry coupled to the measurement circuitry to transmits information related to the cryogenic temperature to a remote location. The cryogenic temperature sensor comprises a polycrystalline silicon sensor including a dopant such that the cryogenic temperature sensor has an electrical resistance which changes over a cryogenic temperature range which is within the sensor resistance range of the measurement circuitry.